Temperature induced giant shift of phonon energy in epitaxial boron nitride layers

The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact with their substrate and how their properties are influenced by defects. In this work...

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Vydané v:	Nanotechnology Ročník 34; číslo 1
Hlavní autori:	Iwański, J, Tatarczak, P, Tokarczyk, M, Da̧browska, A K, Pawłowski, J, Binder, J, Kowalski, G, Stȩpniewski, R, Wysmołek, A
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	IOP Publishing 01.01.2023
Predmet:	defect charged states epitaxial boron nitride FTIR hBN MOVPE phonon
ISSN:	0957-4484, 1361-6528, 1361-6528
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