Temperature induced giant shift of phonon energy in epitaxial boron nitride layers
The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact with their substrate and how their properties are influenced by defects. In this work...
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| Vydáno v: | Nanotechnology Ročník 34; číslo 1 |
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| Hlavní autoři: | , , , , , , , , |
| Médium: | Journal Article |
| Jazyk: | angličtina |
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IOP Publishing
01.01.2023
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| ISSN: | 0957-4484, 1361-6528, 1361-6528 |
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| Abstract | The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact with their substrate and how their properties are influenced by defects. In this work, we investigate hBN layers grown by metal organic vapor phase epitaxy using Fourier-transform infrared spectroscopy in the temperature range of 160-540 K. Our measurements reveal strong differences in the character of layer-substrate interaction for as-grown and delaminated epitaxial layers. A much weaker interaction of as-grown layers is explained by wrinkles formation that reduces strain at the layer-substrate interface, which for layers transferred to other substrates occurs only in a limited temperature range. The most striking result is the observation of a giant increase in theE1uphonon energy of up to ∼6 cm-1in a narrow temperature range. We show that the amplitude and temperature range of the anomaly is strongly modified by UV light illumination. The observed giant effect is explained in terms of strain generation resulting from charge redistribution between shallow traps and different defects, which can be interpreted as a result of strong electron-phonon coupling in hBN. The observed narrow temperature range of the anomaly indicates that the effect may be further enhanced for example by electrostrictive effects, expected for sp2boron nitride.The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact with their substrate and how their properties are influenced by defects. In this work, we investigate hBN layers grown by metal organic vapor phase epitaxy using Fourier-transform infrared spectroscopy in the temperature range of 160-540 K. Our measurements reveal strong differences in the character of layer-substrate interaction for as-grown and delaminated epitaxial layers. A much weaker interaction of as-grown layers is explained by wrinkles formation that reduces strain at the layer-substrate interface, which for layers transferred to other substrates occurs only in a limited temperature range. The most striking result is the observation of a giant increase in theE1uphonon energy of up to ∼6 cm-1in a narrow temperature range. We show that the amplitude and temperature range of the anomaly is strongly modified by UV light illumination. The observed giant effect is explained in terms of strain generation resulting from charge redistribution between shallow traps and different defects, which can be interpreted as a result of strong electron-phonon coupling in hBN. The observed narrow temperature range of the anomaly indicates that the effect may be further enhanced for example by electrostrictive effects, expected for sp2boron nitride. |
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| AbstractList | The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact with their substrate and how their properties are influenced by defects. In this work, we investigate hBN layers grown by metal organic vapor phase epitaxy using Fourier-transform infrared spectroscopy in the temperature range of 160-540 K. Our measurements reveal strong differences in the character of layer-substrate interaction for as-grown and delaminated epitaxial layers. A much weaker interaction of as-grown layers is explained by wrinkles formation that reduces strain at the layer-substrate interface, which for layers transferred to other substrates occurs only in a limited temperature range. The most striking result is the observation of a giant increase in theE1uphonon energy of up to ∼6 cm-1in a narrow temperature range. We show that the amplitude and temperature range of the anomaly is strongly modified by UV light illumination. The observed giant effect is explained in terms of strain generation resulting from charge redistribution between shallow traps and different defects, which can be interpreted as a result of strong electron-phonon coupling in hBN. The observed narrow temperature range of the anomaly indicates that the effect may be further enhanced for example by electrostrictive effects, expected for sp2boron nitride.The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact with their substrate and how their properties are influenced by defects. In this work, we investigate hBN layers grown by metal organic vapor phase epitaxy using Fourier-transform infrared spectroscopy in the temperature range of 160-540 K. Our measurements reveal strong differences in the character of layer-substrate interaction for as-grown and delaminated epitaxial layers. A much weaker interaction of as-grown layers is explained by wrinkles formation that reduces strain at the layer-substrate interface, which for layers transferred to other substrates occurs only in a limited temperature range. The most striking result is the observation of a giant increase in theE1uphonon energy of up to ∼6 cm-1in a narrow temperature range. We show that the amplitude and temperature range of the anomaly is strongly modified by UV light illumination. The observed giant effect is explained in terms of strain generation resulting from charge redistribution between shallow traps and different defects, which can be interpreted as a result of strong electron-phonon coupling in hBN. The observed narrow temperature range of the anomaly indicates that the effect may be further enhanced for example by electrostrictive effects, expected for sp2boron nitride. |
| Author | Iwański, J Wysmołek, A Tokarczyk, M Stȩpniewski, R Pawłowski, J Binder, J Kowalski, G Tatarczak, P Da̧browska, A K |
| Author_xml | – sequence: 1 givenname: J orcidid: 0000-0003-2395-4010 surname: Iwański fullname: Iwański, J organization: University of Warsaw Faculty of Physics, ul. Pasteura 5, 02-093 Warsaw, Poland – sequence: 2 givenname: P orcidid: 0000-0003-3715-9165 surname: Tatarczak fullname: Tatarczak, P organization: University of Warsaw Faculty of Physics, ul. Pasteura 5, 02-093 Warsaw, Poland – sequence: 3 givenname: M orcidid: 0000-0001-7459-9800 surname: Tokarczyk fullname: Tokarczyk, M organization: University of Warsaw Faculty of Physics, ul. Pasteura 5, 02-093 Warsaw, Poland – sequence: 4 givenname: A K orcidid: 0000-0003-4633-2054 surname: Da̧browska fullname: Da̧browska, A K organization: University of Warsaw Faculty of Physics, ul. Pasteura 5, 02-093 Warsaw, Poland – sequence: 5 givenname: J orcidid: 0000-0001-9567-7345 surname: Pawłowski fullname: Pawłowski, J organization: University of Warsaw Faculty of Physics, ul. Pasteura 5, 02-093 Warsaw, Poland – sequence: 6 givenname: J orcidid: 0000-0002-0461-7716 surname: Binder fullname: Binder, J organization: University of Warsaw Faculty of Physics, ul. Pasteura 5, 02-093 Warsaw, Poland – sequence: 7 givenname: G orcidid: 0000-0001-9315-3548 surname: Kowalski fullname: Kowalski, G organization: University of Warsaw Faculty of Physics, ul. Pasteura 5, 02-093 Warsaw, Poland – sequence: 8 givenname: R orcidid: 0000-0002-7557-7328 surname: Stȩpniewski fullname: Stȩpniewski, R organization: University of Warsaw Faculty of Physics, ul. Pasteura 5, 02-093 Warsaw, Poland – sequence: 9 givenname: A orcidid: 0000-0002-8302-2189 surname: Wysmołek fullname: Wysmołek, A organization: University of Warsaw Faculty of Physics, ul. Pasteura 5, 02-093 Warsaw, Poland |
| BookMark | eNpVkE1LAzEQhoNUsFbvHnP04Np8b3KU4hcIgtRzyGZn25Rtsm52Qf-9WyqKp4GZh3dennM0iykCQleU3FKi9ZJyRQslmV46bxQzJ2j-u5qhOTGyLITQ4gyd57wjhFLN6By9rWHfQe-GsQccYj16qPEmuDjgvA3NgFODu22anmGI0G--JghDFwb3GVyLq9RPlxiGPtSAW_cFfb5Ap41rM1z-zAV6f7hfr56Kl9fH59XdS-G51kPRCAmqIlVJtSMSQHll-NTKKeZL40UtPRfCMO-Na7RijMvaMyY442VVOckX6PqY2_XpY4Q82H3IHtrWRUhjtqxkRDAptJnQmyMaUmd3aezjVMxSYg_q7MGTPXiyR3V_yf_w6GKyXFhqCZWMMNvVDf8GnFNw_Q |
| CODEN | NNOTER |
| CitedBy_id | crossref_primary_10_1039_D3NR00578J crossref_primary_10_1088_1361_6528_ad18e6 crossref_primary_10_1016_j_diamond_2024_111291 crossref_primary_10_1016_j_tsf_2025_140770 crossref_primary_10_1038_s41598_025_92671_9 crossref_primary_10_1088_2053_1583_acb44a |
| ContentType | Journal Article |
| Copyright | 2022 The Author(s). Published by IOP Publishing Ltd Creative Commons Attribution license. |
| Copyright_xml | – notice: 2022 The Author(s). Published by IOP Publishing Ltd – notice: Creative Commons Attribution license. |
| DBID | O3W TSCCA 7X8 |
| DOI | 10.1088/1361-6528/ac9629 |
| DatabaseName | Institute of Physics Open Access Journal Titles IOPscience (Open Access) MEDLINE - Academic |
| DatabaseTitle | MEDLINE - Academic |
| DatabaseTitleList | MEDLINE - Academic |
| Database_xml | – sequence: 1 dbid: O3W name: Institute of Physics Open Access Journal Titles url: http://iopscience.iop.org/ sourceTypes: Enrichment Source Publisher – sequence: 2 dbid: 7X8 name: MEDLINE - Academic url: https://search.proquest.com/medline sourceTypes: Aggregation Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Physics |
| EISSN | 1361-6528 |
| ExternalDocumentID | nanoac9629 |
| GrantInformation_xml | – fundername: Narodowe Centrum Nauki grantid: 2019/33/B/ST5/02766; 2020/39/D/ST7/02811 funderid: https://doi.org/10.13039/501100004281 |
| GroupedDBID | --- -~X 123 1JI 4.4 53G 5B3 5PX 5VS 5ZH 7.M 7.Q AAGCD AAJIO AAJKP AATNI ABHWH ABJNI ABQJV ABVAM ACAFW ACGFS ACHIP AEFHF AENEX AFYNE AKPSB ALMA_UNASSIGNED_HOLDINGS AOAED ASPBG ATQHT AVWKF AZFZN CBCFC CEBXE CJUJL CRLBU CS3 DU5 EBS EDWGO EMSAF EPQRW EQZZN F5P HAK IHE IJHAN IOP IZVLO KOT LAP M45 N5L N9A O3W P2P PJBAE R4D RIN RNS RO9 ROL RPA SY9 TN5 TSCCA W28 XPP ZMT 7X8 ADEQX AEINN |
| ID | FETCH-LOGICAL-c388t-f45e6b0b718a05ee6c693118a62c79c4d5c34492cc9af862235dc2243237bba53 |
| IEDL.DBID | O3W |
| ISICitedReferencesCount | 8 |
| ISICitedReferencesURI | http://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=Summon&SrcAuth=ProQuest&DestLinkType=CitingArticles&DestApp=WOS_CPL&KeyUT=000868886400001&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D |
| ISSN | 0957-4484 1361-6528 |
| IngestDate | Fri Sep 05 07:15:58 EDT 2025 Wed Aug 21 03:34:49 EDT 2024 Wed Jun 07 11:18:58 EDT 2023 |
| IsDoiOpenAccess | true |
| IsOpenAccess | true |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 1 |
| Language | English |
| License | Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c388t-f45e6b0b718a05ee6c693118a62c79c4d5c34492cc9af862235dc2243237bba53 |
| Notes | NANO-132421.R1 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| ORCID | 0000-0001-9315-3548 0000-0001-7459-9800 0000-0002-8302-2189 0000-0002-0461-7716 0000-0002-7557-7328 0000-0003-3715-9165 0000-0003-2395-4010 0000-0001-9567-7345 0000-0003-4633-2054 |
| OpenAccessLink | https://iopscience.iop.org/article/10.1088/1361-6528/ac9629 |
| PQID | 2720425489 |
| PQPubID | 23479 |
| PageCount | 8 |
| ParticipantIDs | proquest_miscellaneous_2720425489 iop_journals_10_1088_1361_6528_ac9629 |
| PublicationCentury | 2000 |
| PublicationDate | 2023-01-01 |
| PublicationDateYYYYMMDD | 2023-01-01 |
| PublicationDate_xml | – month: 01 year: 2023 text: 2023-01-01 day: 01 |
| PublicationDecade | 2020 |
| PublicationTitle | Nanotechnology |
| PublicationTitleAbbrev | NANO |
| PublicationTitleAlternate | Nanotechnology |
| PublicationYear | 2023 |
| Publisher | IOP Publishing |
| Publisher_xml | – name: IOP Publishing |
| SSID | ssj0011821 |
| Score | 2.473747 |
| Snippet | The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear... |
| SourceID | proquest iop |
| SourceType | Aggregation Database Enrichment Source Publisher |
| SubjectTerms | defect charged states epitaxial boron nitride FTIR hBN MOVPE phonon |
| Title | Temperature induced giant shift of phonon energy in epitaxial boron nitride layers |
| URI | https://iopscience.iop.org/article/10.1088/1361-6528/ac9629 https://www.proquest.com/docview/2720425489 |
| Volume | 34 |
| WOSCitedRecordID | wos000868886400001&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LT9tAEB4laSvBoaUUBLSNFqkcTeJ9ZVecECLqKa2qIHJbrffRRqpsFBvEz2fWNqiIHir15sPYO5qdnYdn9huAL15KVcQosoLGBKrtRGZzH7OACbNj0ntfuHbYxGyxUKuV_j6As6e7MNVNb_pP8bEDCu5E2DfEqUnOZJ5JQdXEOi2pHsIrptCNozJ_Y9dPJQQMnPMOaA954Ir3Ncq_fQH9Ci72whq3Lmb-7r-Y24G3fWRJzjvS9zAI5S5s_4E3uAtv2n5PV3-AH8uA8XKHp0wwLccN9uQnqkpD6l_r2JAqktS1XpUktLcDkYiENGHkHhWWFAn3gKA12Kx9IL9titv34Gp-ubz4mvXjFTLHlGqyyEWQxbRA72SnIgTppGYoNiupm2nHvXCMc02d0zZi4kOZ8A49PqNsVhRWsH0YIRvhAIjmMoRglXZ5QhC0imNU4BgNQkd8Tx_CCQrM9MejNm3lWymTpGWStEwnrUM4fkZX2rIyjJvcYNRCp9Tc-Ig0j9tk8Cik-oYtQ3Vbm1RSRhPElT76x_U-wlYaH9_9UvkEo2ZzGz7Da3fXrOvNGIazlRq3WvUABkXK9w |
| linkProvider | IOP Publishing |
| linkToPdf | http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LT9wwEB61tEXtoY8FBKVQI5Vj2I1fax8RdFVEtV2hRd2b5fgBK6EEbQLqz-84SVGrcqjUWw6T2Po8nhlnxt8AfPJSqiJGkRU0JlJtJzKb-5gFPDA7Jr33hWubTYynU7VY6Fnf57S9C1Pd9qb_CB87ouAOwr4gTg1zJvNMCqqG1mlJ9fDWx6fwLPGUJLX-xr4_pBEweM47sj2cB1e8z1M-9hX0LTjgXxa5dTOTN_89wbfwuo8wyXEn_g6ehHIAr37jHRzAi7bu09UbcDEPGDd3vMoEj-e40J5coco0pL5exoZUkaTq9aokob0liEIkpE4jP1BxSZH4DwhahdXSB3JjU_y-CZeTz_OTL1nfZiFzTKkmi1wEWYwK9FJ2JEKQTmqG0FlJ3Vg77oVjnGvqnLYRD0CUCe_Q8zPKxkVhBduCNZxG2AaiuQwhWKVdnpgEreIYHThGg9AR39M7cIigmX6b1KbNgCtlEmImIWY6xHbg4A-50paVYdzkBqMXOqIGEUWZX0tlcEukPIctQ3VXm5RaRlPElX7_j-N9hPXZ6cR8PZue78LL1FG--8vyAdaa1V3Yg-fuvlnWq_1WvX4Cp7bPdw |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Temperature+induced+giant+shift+of+phonon+energy+in+epitaxial+boron+nitride+layers&rft.jtitle=Nanotechnology&rft.au=Iwa%C5%84ski%2C+J&rft.au=Tatarczak%2C+P&rft.au=Tokarczyk%2C+M&rft.au=Da%CC%A7browska%2C+A+K&rft.date=2023-01-01&rft.pub=IOP+Publishing&rft.issn=0957-4484&rft.eissn=1361-6528&rft.volume=34&rft.issue=1&rft_id=info:doi/10.1088%2F1361-6528%2Fac9629&rft.externalDocID=nanoac9629 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0957-4484&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0957-4484&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0957-4484&client=summon |