Self‐Intercalation Tunable Interlayer Exchange Coupling in a Synthetic van der Waals Antiferromagnet

One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it has proven challenging, due in part to the complicated fabrication process and undesired adsorbates as well as the significantly deteriorated ferromag...

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Vydáno v:	Advanced functional materials Ročník 32; číslo 32
Hlavní autoři:	Zhang, Xiaoqian, Liu, Wenqing, Niu, Wei, Lu, Qiangsheng, Wang, Wei, Sarikhani, Ali, Wu, Xiaohua, Zhu, Chunhui, Sun, Jiabao, Vaninger, Mitchel, Miceli, Paul. F., Li, Jianqi, Singh, David J., Hor, Yew San, Zhao, Yue, Liu, Chang, He, Liang, Zhang, Rong, Bian, Guang, Yu, Dapeng, Xu, Yongbing
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Hoboken Wiley Subscription Services, Inc 01.08.2022 Wiley Blackwell (John Wiley & Sons)
Témata:	Adsorbates Antiferromagnetism Coupling Electronic devices Exchanging Ferromagnetism Giant magnetoresistance GMR effect High vacuum interlayer exchange coupling Interlayers Magnetoresistivity Magnets Materials science Neel temperature self‐intercalation synthetic antiferromagnets Thin films Two dimensional materials van der Waals magnets
ISSN:	1616-301X, 1616-3028
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Abstract	One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it has proven challenging, due in part to the complicated fabrication process and undesired adsorbates as well as the significantly deteriorated ferromagnetism at atomic layers. Here, the engineering of the antiferromagnetic (AFM) interlayer exchange coupling between atomically thin yet ferromagnetic CrTe2 layers in an ultra‐high vacuum‐free 2D magnetic crystal, Cr5Te8 is reported. By self‐introducing interstitial Cr atoms in the vdW gaps, the emergent AFM ordering and the resultant giant magnetoresistance effect are induced. A large negative magnetoresistance (10%) with a plateau‐like feature is revealed, which is consistent with the AFM interlayer coupling between the adjacent CrTe2 main layers in a temperature window of 30 K below the Néel temperature. Notably, the AFM state has a relatively weak interlayer exchange coupling, allowing a switching between the interlayer AFM and ferromagnetic states at moderate magnetic fields. This work represents a new route to engineering low‐power devices that underpin the emerging spintronic technologies, and an ideal laboratory to study 2D magnetism. A giant magnetoresistance is induced by self‐introducing interstitial Cr atoms in the van der Waals gaps of CrTe2 layers. A large negative magnetoresistance (10%) with a plateau‐like feature is revealed, resulting from the antiferromagnetic interlayer coupling between the adjacent CrTe2 layers below the Néel temperature. These findings offer a new horizon in engineering functional structures for 2D magnet‐based spintronics.
AbstractList	Abstract One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it has proven challenging, due in part to the complicated fabrication process and undesired adsorbates as well as the significantly deteriorated ferromagnetism at atomic layers. Here, the engineering of the antiferromagnetic (AFM) interlayer exchange coupling between atomically thin yet ferromagnetic CrTe 2 layers in an ultra‐high vacuum‐free 2D magnetic crystal, Cr 5 Te 8 is reported. By self‐introducing interstitial Cr atoms in the vdW gaps, the emergent AFM ordering and the resultant giant magnetoresistance effect are induced. A large negative magnetoresistance (10%) with a plateau‐like feature is revealed, which is consistent with the AFM interlayer coupling between the adjacent CrTe 2 main layers in a temperature window of 30 K below the Néel temperature. Notably, the AFM state has a relatively weak interlayer exchange coupling, allowing a switching between the interlayer AFM and ferromagnetic states at moderate magnetic fields. This work represents a new route to engineering low‐power devices that underpin the emerging spintronic technologies, and an ideal laboratory to study 2D magnetism. One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it has proven challenging, due in part to the complicated fabrication process and undesired adsorbates as well as the significantly deteriorated ferromagnetism at atomic layers. Here, the engineering of the antiferromagnetic (AFM) interlayer exchange coupling between atomically thin yet ferromagnetic CrTe2 layers in an ultra‐high vacuum‐free 2D magnetic crystal, Cr5Te8 is reported. By self‐introducing interstitial Cr atoms in the vdW gaps, the emergent AFM ordering and the resultant giant magnetoresistance effect are induced. A large negative magnetoresistance (10%) with a plateau‐like feature is revealed, which is consistent with the AFM interlayer coupling between the adjacent CrTe2 main layers in a temperature window of 30 K below the Néel temperature. Notably, the AFM state has a relatively weak interlayer exchange coupling, allowing a switching between the interlayer AFM and ferromagnetic states at moderate magnetic fields. This work represents a new route to engineering low‐power devices that underpin the emerging spintronic technologies, and an ideal laboratory to study 2D magnetism. One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it has proven challenging, due in part to the complicated fabrication process and undesired adsorbates as well as the significantly deteriorated ferromagnetism at atomic layers. Here, the engineering of the antiferromagnetic (AFM) interlayer exchange coupling between atomically thin yet ferromagnetic CrTe 2 layers in an ultra‐high vacuum‐free 2D magnetic crystal, Cr 5 Te 8 is reported. By self‐introducing interstitial Cr atoms in the vdW gaps, the emergent AFM ordering and the resultant giant magnetoresistance effect are induced. A large negative magnetoresistance (10%) with a plateau‐like feature is revealed, which is consistent with the AFM interlayer coupling between the adjacent CrTe 2 main layers in a temperature window of 30 K below the Néel temperature. Notably, the AFM state has a relatively weak interlayer exchange coupling, allowing a switching between the interlayer AFM and ferromagnetic states at moderate magnetic fields. This work represents a new route to engineering low‐power devices that underpin the emerging spintronic technologies, and an ideal laboratory to study 2D magnetism. One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it has proven challenging, due in part to the complicated fabrication process and undesired adsorbates as well as the significantly deteriorated ferromagnetism at atomic layers. Here, the engineering of the antiferromagnetic (AFM) interlayer exchange coupling between atomically thin yet ferromagnetic CrTe2 layers in an ultra‐high vacuum‐free 2D magnetic crystal, Cr5Te8 is reported. By self‐introducing interstitial Cr atoms in the vdW gaps, the emergent AFM ordering and the resultant giant magnetoresistance effect are induced. A large negative magnetoresistance (10%) with a plateau‐like feature is revealed, which is consistent with the AFM interlayer coupling between the adjacent CrTe2 main layers in a temperature window of 30 K below the Néel temperature. Notably, the AFM state has a relatively weak interlayer exchange coupling, allowing a switching between the interlayer AFM and ferromagnetic states at moderate magnetic fields. This work represents a new route to engineering low‐power devices that underpin the emerging spintronic technologies, and an ideal laboratory to study 2D magnetism. A giant magnetoresistance is induced by self‐introducing interstitial Cr atoms in the van der Waals gaps of CrTe2 layers. A large negative magnetoresistance (10%) with a plateau‐like feature is revealed, resulting from the antiferromagnetic interlayer coupling between the adjacent CrTe2 layers below the Néel temperature. These findings offer a new horizon in engineering functional structures for 2D magnet‐based spintronics.
Author	Niu, Wei Li, Jianqi Wang, Wei Yu, Dapeng Singh, David J. Lu, Qiangsheng Wu, Xiaohua Sarikhani, Ali Xu, Yongbing He, Liang Zhu, Chunhui Zhang, Xiaoqian Hor, Yew San Zhao, Yue Vaninger, Mitchel Bian, Guang Liu, Wenqing Sun, Jiabao Miceli, Paul. F. Zhang, Rong Liu, Chang
Author_xml	– sequence: 1 givenname: Xiaoqian surname: Zhang fullname: Zhang, Xiaoqian organization: Southern University of Science and Technology – sequence: 2 givenname: Wenqing surname: Liu fullname: Liu, Wenqing organization: Royal Holloway University of London – sequence: 3 givenname: Wei surname: Niu fullname: Niu, Wei organization: Nanjing University of Posts and Telecommunications – sequence: 4 givenname: Qiangsheng surname: Lu fullname: Lu, Qiangsheng organization: University of Missouri – sequence: 5 givenname: Wei surname: Wang fullname: Wang, Wei organization: Nanjing Tech University – sequence: 6 givenname: Ali surname: Sarikhani fullname: Sarikhani, Ali organization: Missouri University of Science and Technology – sequence: 7 givenname: Xiaohua surname: Wu fullname: Wu, Xiaohua organization: Southern University of Science and Technology – sequence: 8 givenname: Chunhui surname: Zhu fullname: Zhu, Chunhui organization: Chinese Academy of Sciences – sequence: 9 givenname: Jiabao surname: Sun fullname: Sun, Jiabao organization: Royal Holloway University of London – sequence: 10 givenname: Mitchel surname: Vaninger fullname: Vaninger, Mitchel organization: University of Missouri – sequence: 11 givenname: Paul. F. surname: Miceli fullname: Miceli, Paul. F. organization: University of Missouri – sequence: 12 givenname: Jianqi surname: Li fullname: Li, Jianqi organization: Chinese Academy of Sciences – sequence: 13 givenname: David J. surname: Singh fullname: Singh, David J. organization: University of Missouri – sequence: 14 givenname: Yew San surname: Hor fullname: Hor, Yew San organization: Missouri University of Science and Technology – sequence: 15 givenname: Yue surname: Zhao fullname: Zhao, Yue organization: Southern University of Science and Technology – sequence: 16 givenname: Chang surname: Liu fullname: Liu, Chang organization: Southern University of Science and Technology – sequence: 17 givenname: Liang surname: He fullname: He, Liang email: heliang@nju.edu.cn organization: Nanjing University – sequence: 18 givenname: Rong surname: Zhang fullname: Zhang, Rong email: rzhang@nju.edu.cn organization: Nanjing University – sequence: 19 givenname: Guang surname: Bian fullname: Bian, Guang email: biang@missouri.edu organization: University of Missouri – sequence: 20 givenname: Dapeng surname: Yu fullname: Yu, Dapeng organization: Southern University of Science and Technology – sequence: 21 givenname: Yongbing orcidid: 0000-0002-7823-0725 surname: Xu fullname: Xu, Yongbing email: ybxu@nju.edu.cn organization: The University of York
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Snippet	One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it has... Abstract One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it...
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SubjectTerms	Adsorbates Antiferromagnetism Coupling Electronic devices Exchanging Ferromagnetism Giant magnetoresistance GMR effect High vacuum interlayer exchange coupling Interlayers Magnetoresistivity Magnets Materials science Neel temperature self‐intercalation synthetic antiferromagnets Thin films Two dimensional materials van der Waals magnets
Title	Self‐Intercalation Tunable Interlayer Exchange Coupling in a Synthetic van der Waals Antiferromagnet
URI	https://onlinelibrary.wiley.com/doi/abs/10.1002%2Fadfm.202202977 https://www.proquest.com/docview/2699835647 https://www.osti.gov/biblio/1869724
Volume	32
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