Electronic and optical properties of tetrapod quantum dots under applied electric and magnetic fields

In this work, the ground and low-lying excited states in GaAs tetrapod-shaped nanocrystals and in CdTe/CdS core/shell tetrapod-shaped nanocrystals are computed in the case of a finite confinement potential model using the finite element method and the effective mass approximation. For the single mat...

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Vydáno v:European physical journal plus Ročník 139; číslo 4; s. 311
Hlavní autoři: Hahn, R. V. H., Mora-Rey, F., Restrepo, R. L., Morales, A. L., Montoya-Sánchez, J., Eramo, G., Barseghyan, M. G., Ed-Dahmouny, A., Vinasco, J. A., Duque, D. A., Duque, C. A.
Médium: Journal Article
Jazyk:angličtina
Vydáno: Berlin/Heidelberg Springer Berlin Heidelberg 04.04.2024
Springer Nature B.V
Témata:
Applied and Technical Physics
Approximation
Atomic
Complex Systems
Condensed Matter Physics
Diameters
Electron energy
Electrons
Energy levels
Finite element analysis
Finite element method
Magnetic fields
Magnetic properties
Mathematical and Computational Physics
Molecular
Morphology
Nanocrystals
Nanoparticles
Optical and Plasma Physics
Optical properties
Parameters
Physics
Physics and Astronomy
Quantum dots
Regular Article
Software
Theoretical
Thickness
ISSN:2190-5444, 2190-5444
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Popis
Shrnutí:In this work, the ground and low-lying excited states in GaAs tetrapod-shaped nanocrystals and in CdTe/CdS core/shell tetrapod-shaped nanocrystals are computed in the case of a finite confinement potential model using the finite element method and the effective mass approximation. For the single material tetrapod, electron energy levels are studied as a function of size parameters and the intensity of externally applied electric and magnetic fields, while for the core/shell tetrapod the electron and hole states are analyzed relative to size parameters of the core and shell thickness. The results show that the energies are strongly influenced by the tip-arm geometry, arm diameter, shell thickness and the intensity of the electric and magnetic fields.
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ISSN:2190-5444
2190-5444
DOI:10.1140/epjp/s13360-024-05089-z