Unraveling the Mechanism of the Persistent Photoconductivity in Organic Phototransistors

Persistent photoconductivity (PPC) in organic phototransistors provides an opportunity and broad prospects to achieve many emerging applications in optoelectronic devices. However, a fundamental understanding of PPC behavior is still a key challenge impeding its practical applications. In this study...

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Vydáno v:	Advanced functional materials Ročník 29; číslo 45
Hlavní autoři:	Jia, Ruofei, Wu, Xiaofeng, Deng, Wei, Zhang, Xiujuan, Huang, Liming, Niu, Kaifeng, Chi, Lifeng, Jie, Jiansheng
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Hoboken Wiley Subscription Services, Inc 01.11.2019
Témata:	Electrons Materials science Optoelectronic devices organic phototransistors Organic semiconductors organic single crystals Oxygen oxygen‐induced deep traps Photoconductivity Phototransistors Semiconductors
ISSN:	1616-301X, 1616-3028
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Abstract	Persistent photoconductivity (PPC) in organic phototransistors provides an opportunity and broad prospects to achieve many emerging applications in optoelectronic devices. However, a fundamental understanding of PPC behavior is still a key challenge impeding its practical applications. In this study, for the first time, a mechanism for electron trapping is presented in oxygen‐induced deep levels in organic semiconductors for the clarification of PPC behavior with solid evidence. Both theoretical simulation and experimental investigation unveil that oxygen in air atmosphere plays a decisive role in determining the PPC behavior. Oxygen molecules can induce deep defect levels in the energy bandgap of organic semiconductors, which will act as deep traps for photogenerated electrons. The trapped electrons will be maintained in the traps and undergo a very slow releasing process after light illumination, thus leading to a noticeable PPC behavior for the organic phototransistors. The proposed mechanism shows good universality and can be applicable to a host of organic semiconductors for explaining the PPC behaviors. This work reveals the significant role of oxygen in PPC behavior and also provides guidelines for controlling the unique PPC behavior toward device applications. A new mechanism of electron trapping in oxygen‐induced deep levels in organic semiconductors is proposed for the clarification of persistent photoconductivity (PPC) behavior in organic phototransistors (OPTs). Oxygen molecules can induce deep defect levels in the energy bandgap of organic semiconductor, which can trap the photogenerated electrons during light illumination, thus leading to a prominent PPC behavior in OPTs.
AbstractList	Persistent photoconductivity (PPC) in organic phototransistors provides an opportunity and broad prospects to achieve many emerging applications in optoelectronic devices. However, a fundamental understanding of PPC behavior is still a key challenge impeding its practical applications. In this study, for the first time, a mechanism for electron trapping is presented in oxygen‐induced deep levels in organic semiconductors for the clarification of PPC behavior with solid evidence. Both theoretical simulation and experimental investigation unveil that oxygen in air atmosphere plays a decisive role in determining the PPC behavior. Oxygen molecules can induce deep defect levels in the energy bandgap of organic semiconductors, which will act as deep traps for photogenerated electrons. The trapped electrons will be maintained in the traps and undergo a very slow releasing process after light illumination, thus leading to a noticeable PPC behavior for the organic phototransistors. The proposed mechanism shows good universality and can be applicable to a host of organic semiconductors for explaining the PPC behaviors. This work reveals the significant role of oxygen in PPC behavior and also provides guidelines for controlling the unique PPC behavior toward device applications. Persistent photoconductivity (PPC) in organic phototransistors provides an opportunity and broad prospects to achieve many emerging applications in optoelectronic devices. However, a fundamental understanding of PPC behavior is still a key challenge impeding its practical applications. In this study, for the first time, a mechanism for electron trapping is presented in oxygen‐induced deep levels in organic semiconductors for the clarification of PPC behavior with solid evidence. Both theoretical simulation and experimental investigation unveil that oxygen in air atmosphere plays a decisive role in determining the PPC behavior. Oxygen molecules can induce deep defect levels in the energy bandgap of organic semiconductors, which will act as deep traps for photogenerated electrons. The trapped electrons will be maintained in the traps and undergo a very slow releasing process after light illumination, thus leading to a noticeable PPC behavior for the organic phototransistors. The proposed mechanism shows good universality and can be applicable to a host of organic semiconductors for explaining the PPC behaviors. This work reveals the significant role of oxygen in PPC behavior and also provides guidelines for controlling the unique PPC behavior toward device applications. A new mechanism of electron trapping in oxygen‐induced deep levels in organic semiconductors is proposed for the clarification of persistent photoconductivity (PPC) behavior in organic phototransistors (OPTs). Oxygen molecules can induce deep defect levels in the energy bandgap of organic semiconductor, which can trap the photogenerated electrons during light illumination, thus leading to a prominent PPC behavior in OPTs.
Author	Jia, Ruofei Wu, Xiaofeng Jie, Jiansheng Niu, Kaifeng Chi, Lifeng Huang, Liming Deng, Wei Zhang, Xiujuan
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SubjectTerms	Electrons Materials science Optoelectronic devices organic phototransistors Organic semiconductors organic single crystals Oxygen oxygen‐induced deep traps Photoconductivity Phototransistors Semiconductors
Title	Unraveling the Mechanism of the Persistent Photoconductivity in Organic Phototransistors
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