Self‐Limited Epitaxial Growth of Ultrathin Nonlayered CdS Flakes for High‐Performance Photodetectors
2D nonlayered materials that possess appealing properties are entering the researchers' vision. However, direct access to the 2D level of these materials is still a great challenge due to the instrinsic isotropic chemical bond. This work presents the initially self‐limited epitaxial growth of u...
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| Vydané v: | Advanced functional materials Ročník 28; číslo 20 |
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| Hlavní autori: | , , , , , , , , |
| Médium: | Journal Article |
| Jazyk: | English |
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Hoboken
Wiley Subscription Services, Inc
16.05.2018
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| ISSN: | 1616-301X, 1616-3028 |
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| Abstract | 2D nonlayered materials that possess appealing properties are entering the researchers' vision. However, direct access to the 2D level of these materials is still a great challenge due to the instrinsic isotropic chemical bond. This work presents the initially self‐limited epitaxial growth of ultrathin nonlayered CdS flakes (as thin as 6 nm) on mica substrate with a large domain size (>40 µm) by employing In2S3 as the passivation agent. Besides, the thickness and sizes of the products could be tunable by the addition level of In2S3 amount. The growth mechanism is evidenced via experiments and theoretical calculations, which is attributed to the surface distortion effect of In–S motif and the preference of local environments for In on the CdS (0001) surface. The photodetector designed on CdS flake demonstrates a high photoswitching ratio (up to 103), a high detectivity (D* ≈ 2.71 × 109 Jones), and fast photoresponse speed (τR = 14 ms, τD = 8 ms). The as‐proposed self‐limited epitaxial growth method opens a new avenue to synthetize 2D nonlayered materials and will promote their further applications in novel optoelectronic devices.
This work presents the initially self‐limited epitaxial growth of ultrathin nonlayered CdS flakes (≈6 nm) on mica substrate with a large domain size (>40 µm) by employing In2S3 as the passivation agent. The growth mechanism is attributed to the surface distortion effect of In–S motif and the preference of local environments for In on the CdS (0001) surface. |
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| AbstractList | 2D nonlayered materials that possess appealing properties are entering the researchers' vision. However, direct access to the 2D level of these materials is still a great challenge due to the instrinsic isotropic chemical bond. This work presents the initially self‐limited epitaxial growth of ultrathin nonlayered CdS flakes (as thin as 6 nm) on mica substrate with a large domain size (>40 µm) by employing In2S3 as the passivation agent. Besides, the thickness and sizes of the products could be tunable by the addition level of In2S3 amount. The growth mechanism is evidenced via experiments and theoretical calculations, which is attributed to the surface distortion effect of In–S motif and the preference of local environments for In on the CdS (0001) surface. The photodetector designed on CdS flake demonstrates a high photoswitching ratio (up to 103), a high detectivity (D* ≈ 2.71 × 109 Jones), and fast photoresponse speed (τR = 14 ms, τD = 8 ms). The as‐proposed self‐limited epitaxial growth method opens a new avenue to synthetize 2D nonlayered materials and will promote their further applications in novel optoelectronic devices. 2D nonlayered materials that possess appealing properties are entering the researchers' vision. However, direct access to the 2D level of these materials is still a great challenge due to the instrinsic isotropic chemical bond. This work presents the initially self‐limited epitaxial growth of ultrathin nonlayered CdS flakes (as thin as 6 nm) on mica substrate with a large domain size (>40 µm) by employing In2S3 as the passivation agent. Besides, the thickness and sizes of the products could be tunable by the addition level of In2S3 amount. The growth mechanism is evidenced via experiments and theoretical calculations, which is attributed to the surface distortion effect of In–S motif and the preference of local environments for In on the CdS (0001) surface. The photodetector designed on CdS flake demonstrates a high photoswitching ratio (up to 103), a high detectivity (D* ≈ 2.71 × 109 Jones), and fast photoresponse speed (τR = 14 ms, τD = 8 ms). The as‐proposed self‐limited epitaxial growth method opens a new avenue to synthetize 2D nonlayered materials and will promote their further applications in novel optoelectronic devices. This work presents the initially self‐limited epitaxial growth of ultrathin nonlayered CdS flakes (≈6 nm) on mica substrate with a large domain size (>40 µm) by employing In2S3 as the passivation agent. The growth mechanism is attributed to the surface distortion effect of In–S motif and the preference of local environments for In on the CdS (0001) surface. 2D nonlayered materials that possess appealing properties are entering the researchers' vision. However, direct access to the 2D level of these materials is still a great challenge due to the instrinsic isotropic chemical bond. This work presents the initially self‐limited epitaxial growth of ultrathin nonlayered CdS flakes (as thin as 6 nm) on mica substrate with a large domain size (>40 µm) by employing In 2 S 3 as the passivation agent. Besides, the thickness and sizes of the products could be tunable by the addition level of In 2 S 3 amount. The growth mechanism is evidenced via experiments and theoretical calculations, which is attributed to the surface distortion effect of In–S motif and the preference of local environments for In on the CdS (0001) surface. The photodetector designed on CdS flake demonstrates a high photoswitching ratio (up to 10 3 ), a high detectivity ( D * ≈ 2.71 × 10 9 Jones), and fast photoresponse speed (τ R = 14 ms, τ D = 8 ms). The as‐proposed self‐limited epitaxial growth method opens a new avenue to synthetize 2D nonlayered materials and will promote their further applications in novel optoelectronic devices. |
| Author | Li, Huiqiao Zhang, Qi Zhang, Xiuwen Li, Liang Jin, Bao Huang, Pu Su, Jianwei Zhai, Tianyou Zhou, Xing |
| Author_xml | – sequence: 1 givenname: Bao surname: Jin fullname: Jin, Bao organization: Huazhong University of Science and Technology (HUST) – sequence: 2 givenname: Pu surname: Huang fullname: Huang, Pu organization: Shenzhen University – sequence: 3 givenname: Qi surname: Zhang fullname: Zhang, Qi organization: Huazhong University of Science and Technology (HUST) – sequence: 4 givenname: Xing surname: Zhou fullname: Zhou, Xing organization: Huazhong University of Science and Technology (HUST) – sequence: 5 givenname: Xiuwen surname: Zhang fullname: Zhang, Xiuwen organization: Shenzhen University – sequence: 6 givenname: Liang surname: Li fullname: Li, Liang organization: Huazhong University of Science and Technology (HUST) – sequence: 7 givenname: Jianwei surname: Su fullname: Su, Jianwei organization: Huazhong University of Science and Technology (HUST) – sequence: 8 givenname: Huiqiao surname: Li fullname: Li, Huiqiao organization: Huazhong University of Science and Technology (HUST) – sequence: 9 givenname: Tianyou orcidid: 0000-0003-0985-4806 surname: Zhai fullname: Zhai, Tianyou email: zhaity@hust.edu.cn organization: Huazhong University of Science and Technology (HUST) |
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| SubjectTerms | 2D CdS flakes Chemical bonds Epitaxial growth Flakes Materials science Mica nonlayered materials Optoelectronic devices photodetector Photometers self‐limited epitaxial growth Substrates Surface distortion |
| Title | Self‐Limited Epitaxial Growth of Ultrathin Nonlayered CdS Flakes for High‐Performance Photodetectors |
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