Electrical properties of strained off-stoichiometric Cu–Cr–O delafossite thin films
Off-stoichiometric Cu-Cr-O delafossite thin films with different thicknesses were grown by metal organic chemical vapor deposition on substrates with different coefficients of thermal expansion. Seebeck thermoelectric coefficient and resistivity measurements were performed on the range of 300-850 K....
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| Veröffentlicht in: | Journal of physics. Condensed matter Jg. 36; H. 21 |
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| Format: | Journal Article |
| Sprache: | Englisch |
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England
IOP Publishing
29.05.2024
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| ISSN: | 0953-8984, 1361-648X, 1361-648X |
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| Abstract | Off-stoichiometric Cu-Cr-O delafossite thin films with different thicknesses were grown by metal organic chemical vapor deposition on substrates with different coefficients of thermal expansion. Seebeck thermoelectric coefficient and resistivity measurements were performed on the range of 300-850 K. A qualitative change in the temperature-dependence of the resistivity is observed at the temperature corresponding to the deposition process, where the transition from tensile to compressive strain takes place. Arrhenius plots reveal different slopes in these two thermal ranges. The fact that the shift is more pronounced for the thinner films might indicate the induced strain plays a role in changing electrical behaviour. Furthermore, changes below 0.1% in electrical mobility were measured when the strain is induced by mechanical bending. |
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| AbstractList | Off-stoichiometric Cu-Cr-O delafossite thin films with different thicknesses were grown by metal organic chemical vapor deposition on substrates with different coefficients of thermal expansion. Seebeck thermoelectric coefficient and resistivity measurements were performed on the range of 300-850 K. A qualitative change in the temperature-dependence of the resistivity is observed at the temperature corresponding to the deposition process, where the transition from tensile to compressive strain takes place. Arrhenius plots reveal different slopes in these two thermal ranges. The fact that the shift is more pronounced for the thinner films might indicate the induced strain plays a role in changing electrical behaviour. Furthermore, changes below 0.1% in electrical mobility were measured when the strain is induced by mechanical bending. Off-stoichiometric Cu-Cr-O delafossite thin films with different thicknesses were grown by metal organic chemical vapor deposition on substrates with different coefficients of thermal expansion. Seebeck thermoelectric coefficient and resistivity measurements were performed on the range of 300-850 K. A qualitative change in the temperature-dependence of the resistivity is observed at the temperature corresponding to the deposition process, where the transition from tensile to compressive strain takes place. Arrhenius plots reveal different slopes in these two thermal ranges. The fact that the shift is more pronounced for the thinner films might indicate the induced strain plays a role in changing electrical behaviour. Furthermore, changes below 0.1% in electrical mobility were measured when the strain is induced by mechanical bending.Off-stoichiometric Cu-Cr-O delafossite thin films with different thicknesses were grown by metal organic chemical vapor deposition on substrates with different coefficients of thermal expansion. Seebeck thermoelectric coefficient and resistivity measurements were performed on the range of 300-850 K. A qualitative change in the temperature-dependence of the resistivity is observed at the temperature corresponding to the deposition process, where the transition from tensile to compressive strain takes place. Arrhenius plots reveal different slopes in these two thermal ranges. The fact that the shift is more pronounced for the thinner films might indicate the induced strain plays a role in changing electrical behaviour. Furthermore, changes below 0.1% in electrical mobility were measured when the strain is induced by mechanical bending. |
| Author | Crêpellière, Jonathan Polesel-Maris, Jérôme Guillot, Jérôme Moreira, Marco Leturcq, Renaud Fleming, Yves Lunca-Popa, Petru |
| Author_xml | – sequence: 1 givenname: Marco orcidid: 0000-0002-8728-9905 surname: Moreira fullname: Moreira, Marco organization: University of Luxembourg, 2 Avenue de l’Université , L-4365 Esch-sur-Alzette, Luxembourg – sequence: 2 givenname: Jonathan orcidid: 0000-0002-2479-6678 surname: Crêpellière fullname: Crêpellière, Jonathan organization: Luxembourg Institute of Science and Technology (LIST) Materials Research and Technology Department (MRT), 41, Rue du Brill, L-4422 Belvaux, Luxembourg – sequence: 3 givenname: Jérôme orcidid: 0000-0003-0457-619X surname: Polesel-Maris fullname: Polesel-Maris, Jérôme organization: Luxembourg Institute of Science and Technology (LIST) Materials Research and Technology Department (MRT), 41, Rue du Brill, L-4422 Belvaux, Luxembourg – sequence: 4 givenname: Renaud orcidid: 0000-0001-7115-9172 surname: Leturcq fullname: Leturcq, Renaud organization: Luxembourg Institute of Science and Technology (LIST) Materials Research and Technology Department (MRT), 41, Rue du Brill, L-4422 Belvaux, Luxembourg – sequence: 5 givenname: Jérôme orcidid: 0000-0002-3853-461X surname: Guillot fullname: Guillot, Jérôme organization: Luxembourg Institute of Science and Technology (LIST) Materials Research and Technology Department (MRT), 41, Rue du Brill, L-4422 Belvaux, Luxembourg – sequence: 6 givenname: Yves orcidid: 0000-0003-4752-9844 surname: Fleming fullname: Fleming, Yves organization: Luxembourg Institute of Science and Technology (LIST) Materials Research and Technology Department (MRT), 41, Rue du Brill, L-4422 Belvaux, Luxembourg – sequence: 7 givenname: Petru orcidid: 0000-0003-4278-7668 surname: Lunca-Popa fullname: Lunca-Popa, Petru organization: Luxembourg Institute of Science and Technology (LIST) Materials Research and Technology Department (MRT), 41, Rue du Brill, L-4422 Belvaux, Luxembourg |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/38364261$$D View this record in MEDLINE/PubMed |
| BookMark | eNo9kE1LxDAQhoMo7ofePUmPHqybNmkzPUpZP2BhL4reQppO2CxtU5v24M3_4D_0l9iyq5eZ4eVheHkW5LRxDRJyFdG7iAKsIpZGYcrhfaXKWFFxQub_0SmZ0yxhIWTAZ2Th_Z5SyoHxczJjwFIep9GcvK0r1H1ntaqCtnMtdr1FHzgT-L5TtsFyvE3oe2f1zroaJzbIh5-v77wbxzYosVLGeW97DPqdbQJjq9pfkDOjKo-Xx70krw_rl_wp3Gwfn_P7TaiZgD40iREiTrURJlGiAFaIwiDwQutSgU4FjxHB6CIuEy14ZgCAGppkiJlIWMSW5Obwdyz_MaDvZW29xqpSDbrByziLIeYgxIReH9GhqLGUbWdr1X3KPxkjcHsArGvl3g1dMzaXEZWTazmJlZNYeXDNfgHwpHSw |
| CODEN | JCOMEL |
| CitedBy_id | crossref_primary_10_1063_5_0240491 |
| ContentType | Journal Article |
| Copyright | 2024 The Author(s). Published by IOP Publishing Ltd Creative Commons Attribution license. |
| Copyright_xml | – notice: 2024 The Author(s). Published by IOP Publishing Ltd – notice: Creative Commons Attribution license. |
| DBID | O3W TSCCA NPM 7X8 |
| DOI | 10.1088/1361-648X/ad2a07 |
| DatabaseName | Institute of Physics Open Access Journal Titles IOPscience (Open Access) PubMed MEDLINE - Academic |
| DatabaseTitle | PubMed MEDLINE - Academic |
| DatabaseTitleList | PubMed MEDLINE - Academic |
| Database_xml | – sequence: 1 dbid: NPM name: PubMed url: http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed sourceTypes: Index Database – sequence: 2 dbid: O3W name: Institute of Physics Open Access Journal Titles url: http://iopscience.iop.org/ sourceTypes: Publisher – sequence: 3 dbid: 7X8 name: MEDLINE - Academic url: https://search.proquest.com/medline sourceTypes: Aggregation Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Physics |
| EISSN | 1361-648X |
| ExternalDocumentID | 38364261 cmad2a07 |
| Genre | Journal Article |
| GrantInformation_xml | – fundername: Fonds National de la Recherche Luxembourg funderid: http://dx.doi.org/10.13039/501100001866 |
| GroupedDBID | --- -~X 1JI 4.4 53G 5B3 5GY 5PX 5VS 5ZH 7.M 7.Q AAGCD AAGID AAJIO AAJKP AATNI ABCXL ABHWH ABLJU ABQJV ABVAM ACAFW ACGFS ACHIP ACNCT AEFHF AFYNE AKPSB ALMA_UNASSIGNED_HOLDINGS AOAED ASPBG ATQHT AVWKF AZFZN CBCFC CEBXE CJUJL CRLBU CS3 EBS EDWGO EMSAF EPQRW EQZZN F5P HAK IHE IJHAN IOP IZVLO KOT LAP N5L N9A O3W P2P PJBAE RIN RNS RO9 ROL RPA SY9 TN5 TSCCA W28 WH7 XPP YQT ZMT ~02 NPM 7X8 ADEQX AEINN |
| ID | FETCH-LOGICAL-c378t-f5f7726cf7f5a7b83b7bfe84bccda8c6742ee8fcb2d5c749f8880f059ee975313 |
| IEDL.DBID | O3W |
| ISICitedReferencesCount | 2 |
| ISICitedReferencesURI | http://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=Summon&SrcAuth=ProQuest&DestLinkType=CitingArticles&DestApp=WOS_CPL&KeyUT=001174590800001&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D |
| ISSN | 0953-8984 1361-648X |
| IngestDate | Thu Sep 04 15:36:16 EDT 2025 Wed Feb 19 02:07:31 EST 2025 Sun Aug 18 15:50:27 EDT 2024 |
| IsDoiOpenAccess | true |
| IsOpenAccess | true |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 21 |
| Keywords | strain electronic properties off-stoichiometric copper chromium oxide |
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| License | Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. Creative Commons Attribution license. |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c378t-f5f7726cf7f5a7b83b7bfe84bccda8c6742ee8fcb2d5c749f8880f059ee975313 |
| Notes | JPCM-122800.R1 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| ORCID | 0000-0002-2479-6678 0000-0002-8728-9905 0000-0003-4278-7668 0000-0003-0457-619X 0000-0003-4752-9844 0000-0001-7115-9172 0000-0002-3853-461X |
| OpenAccessLink | https://iopscience.iop.org/article/10.1088/1361-648X/ad2a07 |
| PMID | 38364261 |
| PQID | 2928248771 |
| PQPubID | 23479 |
| PageCount | 10 |
| ParticipantIDs | iop_journals_10_1088_1361_648X_ad2a07 pubmed_primary_38364261 proquest_miscellaneous_2928248771 |
| PublicationCentury | 2000 |
| PublicationDate | 2024-05-29 |
| PublicationDateYYYYMMDD | 2024-05-29 |
| PublicationDate_xml | – month: 05 year: 2024 text: 2024-05-29 day: 29 |
| PublicationDecade | 2020 |
| PublicationPlace | England |
| PublicationPlace_xml | – name: England |
| PublicationTitle | Journal of physics. Condensed matter |
| PublicationTitleAbbrev | JPhysCM |
| PublicationTitleAlternate | J. Phys.: Condens. Matter |
| PublicationYear | 2024 |
| Publisher | IOP Publishing |
| Publisher_xml | – name: IOP Publishing |
| SSID | ssj0004834 |
| Score | 2.458882 |
| Snippet | Off-stoichiometric Cu-Cr-O delafossite thin films with different thicknesses were grown by metal organic chemical vapor deposition on substrates with different... |
| SourceID | proquest pubmed iop |
| SourceType | Aggregation Database Index Database Publisher |
| SubjectTerms | copper chromium oxide delafossite electronic properties strain |
| Title | Electrical properties of strained off-stoichiometric Cu–Cr–O delafossite thin films |
| URI | https://iopscience.iop.org/article/10.1088/1361-648X/ad2a07 https://www.ncbi.nlm.nih.gov/pubmed/38364261 https://www.proquest.com/docview/2928248771 |
| Volume | 36 |
| WOSCitedRecordID | wos001174590800001&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV3NTtwwEB5tFyr1UugP7RZYGak9umxiJ56IE1qBuLDLoYjcLMexxUqQrDa7Pfcd-oY8CeMkLZdWQuJiWYoVRzPjzDeeP4Cv1sjITEzJRREbLhOMeGHiJHgKpbeJSFH4ttmEms0wz7OrAZz8zYWpl_2v_ztNu0LBHQn7gDg8jkQa8VRifmzK2IRM8i2BpMZJmOfi5ikpEluXcqinxjFD2fso__UG0iu02f8xZqtrznde9JW78LaHmOy0W_oOBq56D6_bUE_bfICbs7bzTWAOW4ar-FWoqcpqz5q2X4Qrae45gcKFvQ3J-WEtm24efv2ermiYs1BY0pNyJbTK1reLivnF3X3zEa7Pz35ML3jfXoFboXDNfeIJWqfWK58YVaAoVOEdysLa0qBNyWh2Dr0t4jKxSmaejOWJJzjmXMjGjcQeDKu6cp-BTURSlMLS-XZWZspimZXCWeUkSk8PRvCN6KT749Ho1vONqAORdCCS7og0gqM_LNAk5sF3YSpXbxodZ2QbknGlohF86nijl109Dk1GdhoswS_P3GUf3sQETUIMQJwdwHC92rhD2LY_14tmNYZXKkcaZ1eX41aiHgEo7Myn |
| linkProvider | IOP Publishing |
| linkToPdf | http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV3NbtQwEB7RUlAv0EKBLVBcCY7ubmInnhzR0hVV0bYHUPdmOf5RV4LsarPLmXfgDfskHTupuICE1EtkKVYczYzj78v8Aby3RmZmZBwXdW64LDDjtcmL6CmUwRaiRBFSswk1neJsVl32fU5TLsxi2X_6T2jYFQruRNgHxOEwE2XGS4mzoXG5Ganh0oUteBjrlESzvhBXfxIjMbmVY001jhXK3k_5t6fQ2UIL_htnpvNm8vTeb7oHT3qoyT520_fhgW-ewaMU8mnb53B1mjrgRCWxZfwlv4q1VdkisDb1jfCOxoETOJzb65ikH-ey8ebm1-_xii4XLBaYDHTIEmpl6-t5w8L8-4_2AL5NTr-OP_O-zQK3QuGahyIQxC5tUKEwqkZRqzp4lLW1zqAtiTx7j8HWuSusklUg0jwKBMu8j1m5mXgB282i8a-AjURRO2Fpn3srK2XRVU54q7xEGejGAD6QrHS_TVqdPOCIOgpKR0HpTlADOL5TgyZzjz4M0_jFptV5RRyRSJbKBvCy049ednU5NJHtMjLCw_9c5R08vvw00V_OpuevYTcntBLDAvLqDWyvVxv_Fnbsz_W8XR0lo7oF4R_QGw |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Electrical+properties+of+strained+off-stoichiometric+Cu%E2%80%93Cr%E2%80%93O+delafossite+thin+films&rft.jtitle=Journal+of+physics.+Condensed+matter&rft.au=Moreira%2C+Marco&rft.au=Cr%C3%AApelli%C3%A8re%2C+Jonathan&rft.au=Polesel-Maris%2C+J%C3%A9r%C3%B4me&rft.au=Leturcq%2C+Renaud&rft.date=2024-05-29&rft.pub=IOP+Publishing&rft.issn=0953-8984&rft.eissn=1361-648X&rft.volume=36&rft.issue=21&rft_id=info:doi/10.1088%2F1361-648X%2Fad2a07&rft.externalDocID=cmad2a07 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0953-8984&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0953-8984&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0953-8984&client=summon |