Reliability challenges in 3D IC packaging technology

At the moment, a major paradigm change, from 2D IC to 3D IC, is occurring in microelectronic industry. Joule heating is serious in 3D IC, and vertical interconnect is the critical element to be developed. Also reliability concerns will be extremely important. For example, in order to remove heat, a...

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Vydáno v:Microelectronics and reliability Ročník 51; číslo 3; s. 517 - 523
Hlavní autor: Tu, K.N.
Médium: Journal Article
Jazyk:angličtina
Vydáno: Kidlington Elsevier Ltd 01.03.2011
Elsevier
Témata:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electromigration
Electronics
Exact sciences and technology
Integrated circuits
Microelectronics
Packaging
Projection
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature gradient
Thermomigration
Three dimensional
Thermal diffusion
Interconnection
Electronic packaging
Integrated circuit
Flip-chip
Electrodiffusion
Microelectronics
Reliability
Joule effect
Temperature gradient
ISSN:0026-2714, 1872-941X
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Shrnutí:At the moment, a major paradigm change, from 2D IC to 3D IC, is occurring in microelectronic industry. Joule heating is serious in 3D IC, and vertical interconnect is the critical element to be developed. Also reliability concerns will be extremely important. For example, in order to remove heat, a temperature gradient must exist in the packaging. If we assume just a difference of 1 °C across a micro-bump of 10 μm in diameter, the temperature gradient is 1000 °C/cm which cannot be ignored due to thermomigration. Equally challenging reliability issues are electromigration and stress-migration. Since the 3D IC structure is new, the details of reliability problems are mostly unknown. This paper presents a projection of the reliability challenges in 3D IC packaging technology on the basis of what we have known from flip chip technology.
Bibliografie:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2010.09.031