Reliability challenges in 3D IC packaging technology
At the moment, a major paradigm change, from 2D IC to 3D IC, is occurring in microelectronic industry. Joule heating is serious in 3D IC, and vertical interconnect is the critical element to be developed. Also reliability concerns will be extremely important. For example, in order to remove heat, a...
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| Veröffentlicht in: | Microelectronics and reliability Jg. 51; H. 3; S. 517 - 523 |
|---|---|
| 1. Verfasser: | |
| Format: | Journal Article |
| Sprache: | Englisch |
| Veröffentlicht: |
Kidlington
Elsevier Ltd
01.03.2011
Elsevier |
| Schlagworte: | |
| ISSN: | 0026-2714, 1872-941X |
| Online-Zugang: | Volltext |
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| Abstract | At the moment, a major paradigm change, from 2D IC to 3D IC, is occurring in microelectronic industry. Joule heating is serious in 3D IC, and vertical interconnect is the critical element to be developed. Also reliability concerns will be extremely important. For example, in order to remove heat, a temperature gradient must exist in the packaging. If we assume just a difference of 1
°C across a micro-bump of 10
μm in diameter, the temperature gradient is 1000
°C/cm which cannot be ignored due to thermomigration. Equally challenging reliability issues are electromigration and stress-migration. Since the 3D IC structure is new, the details of reliability problems are mostly unknown. This paper presents a projection of the reliability challenges in 3D IC packaging technology on the basis of what we have known from flip chip technology. |
|---|---|
| AbstractList | At the moment, a major paradigm change, from 2D IC to 3D IC, is occurring in microelectronic industry. Joule heating is serious in 3D IC, and vertical interconnect is the critical element to be developed. Also reliability concerns will be extremely important. For example, in order to remove heat, a temperature gradient must exist in the packaging. If we assume just a difference of 1
°C across a micro-bump of 10
μm in diameter, the temperature gradient is 1000
°C/cm which cannot be ignored due to thermomigration. Equally challenging reliability issues are electromigration and stress-migration. Since the 3D IC structure is new, the details of reliability problems are mostly unknown. This paper presents a projection of the reliability challenges in 3D IC packaging technology on the basis of what we have known from flip chip technology. At the moment, a major paradigm change, from 2D IC to 3D IC, is occurring in microelectronic industry. Joule heating is serious in 3D IC, and vertical interconnect is the critical element to be developed. Also reliability concerns will be extremely important. For example, in order to remove heat, a temperature gradient must exist in the packaging. If we assume just a difference of 1 [deg]C across a micro-bump of 10 [micro]m in diameter, the temperature gradient is 1000 [deg]C/cm which cannot be ignored due to thermomigration. Equally challenging reliability issues are electromigration and stress-migration. Since the 3D IC structure is new, the details of reliability problems are mostly unknown. This paper presents a projection of the reliability challenges in 3D IC packaging technology on the basis of what we have known from flip chip technology. |
| Author | Tu, K.N. |
| Author_xml | – sequence: 1 givenname: K.N. surname: Tu fullname: Tu, K.N. email: kntu@ucla.edu organization: Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095-1595, USA |
| BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23933262$$DView record in Pascal Francis |
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| CODEN | MCRLAS |
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| References_xml | – year: 2010 ident: b0085 article-title: Electronic thin film reliability – reference: Beyne E, De Moor P, Ruythooren W, Labie R, Jourdain A, Tilmans H, et al. Through-silicon via and die stacking technologies for microsystems-integration. In: I EEE international electron devices meeting, IEDM; 2008. – volume: 2 start-page: 132 year: 2009 end-page: 136 ident: b0080 article-title: Thermomigration in flip chip solder joints publication-title: ASE Technol J – reference: μm fine pitch micro-bump interconnection. In: Proceedings of 4th international conference on microsystems, packaging, assembly and circuits technology conference; 2009. – reference: Yu Aibin, Lau John H, Ho Soon Wee, Kumar Aditya, Hnin Wai Yin, Yu Da-Quan, et al. Study of 15 – reference: Zhan Chau-Jie, Chang Jing-Yao, Chang Tao-Chih, Tsai Tsung-Fu. 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| SubjectTerms | Applied sciences Design. Technologies. Operation analysis. Testing Electromigration Electronics Exact sciences and technology Integrated circuits Microelectronics Packaging Projection Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature gradient Thermomigration Three dimensional |
| Title | Reliability challenges in 3D IC packaging technology |
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