Wafer‐Scale Epitaxial Growth of Two‐dimensional Organic Semiconductor Single Crystals toward High‐Performance Transistors

The success of state‐of‐the‐art electronics and optoelectronics relies heavily on the capability to fabricate semiconductor single‐crystal wafers. However, the conventional epitaxial growth strategy for inorganic wafers is invalid for growing organic semiconductor single crystals due to the lack of...

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Vydané v:Advanced materials (Weinheim) Ročník 35; číslo 36; s. e2301017 - n/a
Hlavní autori: Wang, Jinwen, Ren, Zheng, Pan, Jing, Wu, Xiaofeng, Jie, Jiansheng, Zhang, Xiaohong, Zhang, Xiujuan
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: Germany Wiley Subscription Services, Inc 01.09.2023
Predmet:
2D organic semiconductor single crystals
anchored crystal‐seed epitaxial growth
Crystal defects
Crystal growth
Crystal lattices
Electronics
Epitaxial growth
Lattice matching
Liquid surfaces
Materials science
Nucleation
Optoelectronics
Organic crystals
organic field‐effect transistors
Single crystals
Substrates
Transistors
Wafers
wafer‐scale growth
2D organic semiconductor single crystals
wafer-scale growth
organic field-effect transistors
anchored crystal-seed epitaxial growth
ISSN:0935-9648, 1521-4095, 1521-4095
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Shrnutí:The success of state‐of‐the‐art electronics and optoelectronics relies heavily on the capability to fabricate semiconductor single‐crystal wafers. However, the conventional epitaxial growth strategy for inorganic wafers is invalid for growing organic semiconductor single crystals due to the lack of lattice‐matched epitaxial substrates and intricate nucleation behaviors, severely impeding the advancement of organic single‐crystal electronics. Here, an anchored crystal‐seed epitaxial growth method for wafer‐scale growth of 2D organic semiconductor single crystals is developed for the first time. The crystal seed is firmly anchored on the viscous liquid surface, ensuring the steady epitaxial growth of organic single crystals from the crystal seed. The atomically flat liquid surface effectively eliminates the disturbance from substrate defects and greatly enhances the 2D growth of organic crystals. Using this approach, a wafer‐scale few‐layer bis(triethylsilythynyl)‐anthradithphene (Dif‐TES‐ADT) single crystal is formed, yielding a breakthrough for organic field‐effect transistors with a high reliable mobility up to 8.6 cm2 V−1 s−1 and an ultralow mobility variable coefficient of 8.9%. This work opens a new avenue to fabricate organic single‐crystal wafers for high‐performance organic electronics. An anchored crystal‐seed epitaxial growth method is developed to effectively suppress the multiple nucleation behavior of the molecules and enhance the 2D growth of organic crystals. In consequence, wafer‐scale few‐layer organic single crystals are successfully fabricated on the viscous liquid substrate. Organic field‐effect transistors based on the crystal exhibit high device performance with excellent uniformity.
Bibliografia:ObjectType-Article-1
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ISSN:0935-9648
1521-4095
1521-4095
DOI:10.1002/adma.202301017