Wafer‐Scale Epitaxial Growth of Two‐dimensional Organic Semiconductor Single Crystals toward High‐Performance Transistors

The success of state‐of‐the‐art electronics and optoelectronics relies heavily on the capability to fabricate semiconductor single‐crystal wafers. However, the conventional epitaxial growth strategy for inorganic wafers is invalid for growing organic semiconductor single crystals due to the lack of...

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Vydáno v:	Advanced materials (Weinheim) Ročník 35; číslo 36; s. e2301017 - n/a
Hlavní autoři:	Wang, Jinwen, Ren, Zheng, Pan, Jing, Wu, Xiaofeng, Jie, Jiansheng, Zhang, Xiaohong, Zhang, Xiujuan
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Germany Wiley Subscription Services, Inc 01.09.2023
Témata:	2D organic semiconductor single crystals anchored crystal‐seed epitaxial growth Crystal defects Crystal growth Crystal lattices Electronics Epitaxial growth Lattice matching Liquid surfaces Materials science Nucleation Optoelectronics Organic crystals organic field‐effect transistors Single crystals Substrates Transistors Wafers wafer‐scale growth 2D organic semiconductor single crystals wafer-scale growth organic field-effect transistors anchored crystal-seed epitaxial growth
ISSN:	0935-9648, 1521-4095, 1521-4095
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Abstract	The success of state‐of‐the‐art electronics and optoelectronics relies heavily on the capability to fabricate semiconductor single‐crystal wafers. However, the conventional epitaxial growth strategy for inorganic wafers is invalid for growing organic semiconductor single crystals due to the lack of lattice‐matched epitaxial substrates and intricate nucleation behaviors, severely impeding the advancement of organic single‐crystal electronics. Here, an anchored crystal‐seed epitaxial growth method for wafer‐scale growth of 2D organic semiconductor single crystals is developed for the first time. The crystal seed is firmly anchored on the viscous liquid surface, ensuring the steady epitaxial growth of organic single crystals from the crystal seed. The atomically flat liquid surface effectively eliminates the disturbance from substrate defects and greatly enhances the 2D growth of organic crystals. Using this approach, a wafer‐scale few‐layer bis(triethylsilythynyl)‐anthradithphene (Dif‐TES‐ADT) single crystal is formed, yielding a breakthrough for organic field‐effect transistors with a high reliable mobility up to 8.6 cm2 V−1 s−1 and an ultralow mobility variable coefficient of 8.9%. This work opens a new avenue to fabricate organic single‐crystal wafers for high‐performance organic electronics. An anchored crystal‐seed epitaxial growth method is developed to effectively suppress the multiple nucleation behavior of the molecules and enhance the 2D growth of organic crystals. In consequence, wafer‐scale few‐layer organic single crystals are successfully fabricated on the viscous liquid substrate. Organic field‐effect transistors based on the crystal exhibit high device performance with excellent uniformity.
AbstractList	The success of state-of-the-art electronics and optoelectronics relies heavily on the capability to fabricate semiconductor single-crystal wafers. However, the conventional epitaxial growth strategy for inorganic wafers is invalid for growing organic semiconductor single crystals due to the lack of lattice-matched epitaxial substrates and intricate nucleation behaviors, severely impeding the advancement of organic single-crystal electronics. Here, an anchored crystal-seed epitaxial growth method for wafer-scale growth of 2D organic semiconductor single crystals is developed for the first time. The crystal seed is firmly anchored on the viscous liquid surface, ensuring the steady epitaxial growth of organic single crystals from the crystal seed. The atomically flat liquid surface effectively eliminates the disturbance from substrate defects and greatly enhances the 2D growth of organic crystals. Using this approach, a wafer-scale few-layer bis(triethylsilythynyl)-anthradithphene (Dif-TES-ADT) single crystal is formed, yielding a breakthrough for organic field-effect transistors with a high reliable mobility up to 8.6 cm V s and an ultralow mobility variable coefficient of 8.9%. This work opens a new avenue to fabricate organic single-crystal wafers for high-performance organic electronics. The success of state‐of‐the‐art electronics and optoelectronics relies heavily on the capability to fabricate semiconductor single‐crystal wafers. However, the conventional epitaxial growth strategy for inorganic wafers is invalid for growing organic semiconductor single crystals due to the lack of lattice‐matched epitaxial substrates and intricate nucleation behaviors, severely impeding the advancement of organic single‐crystal electronics. Here, an anchored crystal‐seed epitaxial growth method for wafer‐scale growth of 2D organic semiconductor single crystals is developed for the first time. The crystal seed is firmly anchored on the viscous liquid surface, ensuring the steady epitaxial growth of organic single crystals from the crystal seed. The atomically flat liquid surface effectively eliminates the disturbance from substrate defects and greatly enhances the 2D growth of organic crystals. Using this approach, a wafer‐scale few‐layer bis(triethylsilythynyl)‐anthradithphene (Dif‐TES‐ADT) single crystal is formed, yielding a breakthrough for organic field‐effect transistors with a high reliable mobility up to 8.6 cm 2 V −1 s −1 and an ultralow mobility variable coefficient of 8.9%. This work opens a new avenue to fabricate organic single‐crystal wafers for high‐performance organic electronics. The success of state-of-the-art electronics and optoelectronics relies heavily on the capability to fabricate semiconductor single-crystal wafers. However, the conventional epitaxial growth strategy for inorganic wafers is invalid for growing organic semiconductor single crystals due to the lack of lattice-matched epitaxial substrates and intricate nucleation behaviors, severely impeding the advancement of organic single-crystal electronics. Here, an anchored crystal-seed epitaxial growth method for wafer-scale growth of 2D organic semiconductor single crystals is developed for the first time. The crystal seed is firmly anchored on the viscous liquid surface, ensuring the steady epitaxial growth of organic single crystals from the crystal seed. The atomically flat liquid surface effectively eliminates the disturbance from substrate defects and greatly enhances the 2D growth of organic crystals. Using this approach, a wafer-scale few-layer bis(triethylsilythynyl)-anthradithphene (Dif-TES-ADT) single crystal is formed, yielding a breakthrough for organic field-effect transistors with a high reliable mobility up to 8.6 cm2 V-1 s-1 and an ultralow mobility variable coefficient of 8.9%. This work opens a new avenue to fabricate organic single-crystal wafers for high-performance organic electronics.The success of state-of-the-art electronics and optoelectronics relies heavily on the capability to fabricate semiconductor single-crystal wafers. However, the conventional epitaxial growth strategy for inorganic wafers is invalid for growing organic semiconductor single crystals due to the lack of lattice-matched epitaxial substrates and intricate nucleation behaviors, severely impeding the advancement of organic single-crystal electronics. Here, an anchored crystal-seed epitaxial growth method for wafer-scale growth of 2D organic semiconductor single crystals is developed for the first time. The crystal seed is firmly anchored on the viscous liquid surface, ensuring the steady epitaxial growth of organic single crystals from the crystal seed. The atomically flat liquid surface effectively eliminates the disturbance from substrate defects and greatly enhances the 2D growth of organic crystals. Using this approach, a wafer-scale few-layer bis(triethylsilythynyl)-anthradithphene (Dif-TES-ADT) single crystal is formed, yielding a breakthrough for organic field-effect transistors with a high reliable mobility up to 8.6 cm2 V-1 s-1 and an ultralow mobility variable coefficient of 8.9%. This work opens a new avenue to fabricate organic single-crystal wafers for high-performance organic electronics. The success of state‐of‐the‐art electronics and optoelectronics relies heavily on the capability to fabricate semiconductor single‐crystal wafers. However, the conventional epitaxial growth strategy for inorganic wafers is invalid for growing organic semiconductor single crystals due to the lack of lattice‐matched epitaxial substrates and intricate nucleation behaviors, severely impeding the advancement of organic single‐crystal electronics. Here, an anchored crystal‐seed epitaxial growth method for wafer‐scale growth of 2D organic semiconductor single crystals is developed for the first time. The crystal seed is firmly anchored on the viscous liquid surface, ensuring the steady epitaxial growth of organic single crystals from the crystal seed. The atomically flat liquid surface effectively eliminates the disturbance from substrate defects and greatly enhances the 2D growth of organic crystals. Using this approach, a wafer‐scale few‐layer bis(triethylsilythynyl)‐anthradithphene (Dif‐TES‐ADT) single crystal is formed, yielding a breakthrough for organic field‐effect transistors with a high reliable mobility up to 8.6 cm2 V−1 s−1 and an ultralow mobility variable coefficient of 8.9%. This work opens a new avenue to fabricate organic single‐crystal wafers for high‐performance organic electronics. The success of state‐of‐the‐art electronics and optoelectronics relies heavily on the capability to fabricate semiconductor single‐crystal wafers. However, the conventional epitaxial growth strategy for inorganic wafers is invalid for growing organic semiconductor single crystals due to the lack of lattice‐matched epitaxial substrates and intricate nucleation behaviors, severely impeding the advancement of organic single‐crystal electronics. Here, an anchored crystal‐seed epitaxial growth method for wafer‐scale growth of 2D organic semiconductor single crystals is developed for the first time. The crystal seed is firmly anchored on the viscous liquid surface, ensuring the steady epitaxial growth of organic single crystals from the crystal seed. The atomically flat liquid surface effectively eliminates the disturbance from substrate defects and greatly enhances the 2D growth of organic crystals. Using this approach, a wafer‐scale few‐layer bis(triethylsilythynyl)‐anthradithphene (Dif‐TES‐ADT) single crystal is formed, yielding a breakthrough for organic field‐effect transistors with a high reliable mobility up to 8.6 cm2 V−1 s−1 and an ultralow mobility variable coefficient of 8.9%. This work opens a new avenue to fabricate organic single‐crystal wafers for high‐performance organic electronics. An anchored crystal‐seed epitaxial growth method is developed to effectively suppress the multiple nucleation behavior of the molecules and enhance the 2D growth of organic crystals. In consequence, wafer‐scale few‐layer organic single crystals are successfully fabricated on the viscous liquid substrate. Organic field‐effect transistors based on the crystal exhibit high device performance with excellent uniformity.
Author	Wang, Jinwen Wu, Xiaofeng Pan, Jing Jie, Jiansheng Ren, Zheng Zhang, Xiujuan Zhang, Xiaohong
Author_xml	– sequence: 1 givenname: Jinwen surname: Wang fullname: Wang, Jinwen organization: Soochow University – sequence: 2 givenname: Zheng surname: Ren fullname: Ren, Zheng organization: Soochow University – sequence: 3 givenname: Jing surname: Pan fullname: Pan, Jing organization: Soochow University – sequence: 4 givenname: Xiaofeng surname: Wu fullname: Wu, Xiaofeng organization: Soochow University – sequence: 5 givenname: Jiansheng orcidid: 0000-0002-2230-4289 surname: Jie fullname: Jie, Jiansheng email: jsjie@suda.edu.cn organization: Macau University of Science and Technology – sequence: 6 givenname: Xiaohong surname: Zhang fullname: Zhang, Xiaohong organization: Soochow University – sequence: 7 givenname: Xiujuan surname: Zhang fullname: Zhang, Xiujuan email: xjzhang@suda.edu.cn organization: Soochow University
BackLink	https://www.ncbi.nlm.nih.gov/pubmed/37436692$$D View this record in MEDLINE/PubMed
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Snippet	The success of state‐of‐the‐art electronics and optoelectronics relies heavily on the capability to fabricate semiconductor single‐crystal wafers. However, the... The success of state-of-the-art electronics and optoelectronics relies heavily on the capability to fabricate semiconductor single-crystal wafers. However, the...
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SubjectTerms	2D organic semiconductor single crystals anchored crystal‐seed epitaxial growth Crystal defects Crystal growth Crystal lattices Electronics Epitaxial growth Lattice matching Liquid surfaces Materials science Nucleation Optoelectronics Organic crystals organic field‐effect transistors Single crystals Substrates Transistors Wafers wafer‐scale growth
Title	Wafer‐Scale Epitaxial Growth of Two‐dimensional Organic Semiconductor Single Crystals toward High‐Performance Transistors
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