Unconventional resistive switching behavior in ferroelectric tunnel junctions

We investigate an unconventional resistive switching (RS) behavior in La0.67Sr0.33MnO3/BaTiO3/metal (LSMO/BTO) ferroelectric tunnel junctions (FTJs), which is dominated by the variation of the barrier potential profile modulated by the migration of oxygen vacancies in the p-LSMO/n-BTO junction. The...

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Vydané v:	Physical chemistry chemical physics : PCCP Ročník 17; číslo 15; s. 10146
Hlavní autori:	Mao, H J, Song, C, Xiao, L R, Gao, S, Cui, B, Peng, J J, Li, F, Pan, F
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	England 21.04.2015
ISSN:	1463-9084, 1463-9084
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Shrnutí:	We investigate an unconventional resistive switching (RS) behavior in La0.67Sr0.33MnO3/BaTiO3/metal (LSMO/BTO) ferroelectric tunnel junctions (FTJs), which is dominated by the variation of the barrier potential profile modulated by the migration of oxygen vacancies in the p-LSMO/n-BTO junction. The LSMO/BTO/Co junction exhibits a remarkable self-rectifying effect ascribed to the high-density interface state at the BTO/Co interface, in contrast to the symmetric conductivity when the top metal electrode is inert Pt. The effects of ferroelectric polarization on the RS behavior are also emphasized. Our work builds a bridge between FTJs and resistive random access memory devices.
Bibliografia:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1463-9084 1463-9084
DOI:	10.1039/c5cp00421g