Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe
Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple ori...
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| Vydané v: | Science (American Association for the Advancement of Science) Ročník 369; číslo 6503; s. 542 |
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| Hlavní autori: | , , , , , , , , , , , , |
| Médium: | Journal Article |
| Jazyk: | English |
| Vydavateľské údaje: |
31.07.2020
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| ISSN: | 1095-9203, 1095-9203 |
| On-line prístup: | Zistit podrobnosti o prístupe |
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| Shrnutí: | Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Ξ) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Ξ) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics. |
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| Bibliografia: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| ISSN: | 1095-9203 1095-9203 |
| DOI: | 10.1126/science.aba9778 |