Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe
Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple ori...
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| Published in: | Science (American Association for the Advancement of Science) Vol. 369; no. 6503; p. 542 |
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| Main Authors: | , , , , , , , , , , , , |
| Format: | Journal Article |
| Language: | English |
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31.07.2020
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| ISSN: | 1095-9203, 1095-9203 |
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| Abstract | Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Ξ) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Ξ) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics. |
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| AbstractList | Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Ξ) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Ξ) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics. |
| Author | Shan, Zhiwei Chen, Hongyi Zhao, Kunpeng Chen, Lidong Qiu, Pengfei Wei, Tian-Ran Wang, Yuecun Li, Rongbin Gao, Zhiqiang He, Jian Jin, Min Shi, Xun Jiang, Jun |
| Author_xml | – sequence: 1 givenname: Tian-Ran surname: Wei fullname: Wei, Tian-Ran – sequence: 2 givenname: Min surname: Jin fullname: Jin, Min – sequence: 3 givenname: Yuecun surname: Wang fullname: Wang, Yuecun – sequence: 4 givenname: Hongyi surname: Chen fullname: Chen, Hongyi – sequence: 5 givenname: Zhiqiang surname: Gao fullname: Gao, Zhiqiang – sequence: 6 givenname: Kunpeng surname: Zhao fullname: Zhao, Kunpeng – sequence: 7 givenname: Pengfei surname: Qiu fullname: Qiu, Pengfei – sequence: 8 givenname: Zhiwei surname: Shan fullname: Shan, Zhiwei – sequence: 9 givenname: Jun surname: Jiang fullname: Jiang, Jun – sequence: 10 givenname: Rongbin surname: Li fullname: Li, Rongbin – sequence: 11 givenname: Lidong surname: Chen fullname: Chen, Lidong – sequence: 12 givenname: Jian surname: He fullname: He, Jian – sequence: 13 givenname: Xun surname: Shi fullname: Shi, Xun |
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