Effect of sputtering pressure on structure and dielectric properties of bismuth magnesium niobate thin films prepared by RF magnetron sputtering

The cubic pyrochlore Bi1.5MgNb1.5O7 (BMN) thin films were deposited on Pt coated sapphire substrates by rf magnetron sputtering using different pressures. The effects of sputtering pressure on phase structure and dielectric properties of BMN thin films were investigated. The X-ray diffraction result...

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Vydáno v:Thin solid films Ročník 603; s. 391 - 394
Hlavní autoři: Gao, Libin, Jiang, Shuwen, Li, Ruguan
Médium: Journal Article
Jazyk:angličtina
Vydáno: Elsevier B.V 31.03.2016
Témata:
Bi1.5MgNb1.5O7 thin films
Cubic pyrochlore films
Low loss tangent
Sputtering pressure
Tunability
Cubic pyrochlore films
Bi1.5MgNb1.5O7 thin films
Low loss tangent
Sputtering pressure
Tunability
ISSN:0040-6090, 1879-2731
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Shrnutí:The cubic pyrochlore Bi1.5MgNb1.5O7 (BMN) thin films were deposited on Pt coated sapphire substrates by rf magnetron sputtering using different pressures. The effects of sputtering pressure on phase structure and dielectric properties of BMN thin films were investigated. The X-ray diffraction results revealed that all the BMN thin films deposited at different sputtering pressures showed a pure cubic pyrochlore phase, but the films sputtered at low pressure have a better crystalline than that sputtered at high pressure. The BMN thin films sputtered at 1Pa exhibited good crystalline with a strong (222) preferred orientation and excellent dielectric properties, which have a dielectric constant of 80, dielectric loss of ~0.007, and dielectric tunability of ~38% at bias field of 1.25MV/cm. The dielectric constant and tunability of BMN thin films were both decreased with increasing sputtering pressure. However, the dielectric loss showed a slightly change with the sputtering pressure. Furthermore, the leakage current density of BMN thin films increased with increasing sputtering pressure, which is suggested to be related with the increasing grain size and surface roughness of thin films sputtered at high pressure. •Investigation of sputtering pressure on the properties of Bi1.5MgNb1.5O7 (BMN) thin films•Enhancement of BMN thin film crystallinity with decreasing sputtering pressure•Demonstration of excellent dielectric properties of BMN thin films sputtered at 1Pa
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2016.02.059