Channel Coding for Nonvolatile Memory Technologies: Theoretical Advances and Practical Considerations

Every bit of information in a storage or memory device is bound by a multitude of performance specifications, and is subject to a variety of reliability impediments. At the other end, the physical processes tamed to remember our bits offer a constant source of risk to their reliability. These includ...

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Veröffentlicht in:	Proceedings of the IEEE Jg. 105; H. 9; S. 1705 - 1724
Hauptverfasser:	Dolecek, Lara, Cassuto, Yuval
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	New York IEEE 01.09.2017 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Schlagworte:	Algebraic codes BCH codes Channel coding Coding Computer architecture Data storage Drives error-correction code (ECC) Flash memories graph codes LDPC codes Mathematical analysis Matrix methods Memory devices Microprocessors Nonvolatile memory Phase transitions Reliability rewrite codes Solid-state circuits WOM codes
ISSN:	0018-9219, 1558-2256
Online-Zugang:	Volltext
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