Developments in nano-oscillators based upon spin-transfer point-contact devices

We review the current status of research on microwave nano-oscillators that utilize spin transfer devices with point-contact geometry, with an emphasis on the open questions that still prevent our full understanding of device properties. In particular, we examine those aspects that might affect irre...

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Veröffentlicht in:Journal of magnetism and magnetic materials Jg. 320; H. 7; S. 1260 - 1271
Hauptverfasser: Silva, T.J., Rippard, W.H.
Format: Journal Article
Sprache:Englisch
Veröffentlicht: Amsterdam Elsevier B.V 01.04.2008
Elsevier Science
Schlagworte:
Applied sciences
Chaos
Electronics
Exact sciences and technology
Linewidth
Microwave and submillimeter wave devices, electron transfer devices
Nano-oscillator
Noise
Nonlinear Schroedinger equation
Nonlinearity
Oersted field
Point contact
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Spin accumulation
Spin torque
Chaos
Point contact
Spin accumulation
Linewidth
Noise
Nano-oscillator
Nonlinearity
Oersted field
Spin torque
Nonlinear Schroedinger equation
Microwave device
Background noise
Schrödinger equation
Non linear equation
Spin dynamics
Spin tranfer
Magnetic material
Oscillator
Deterministic model
Nanotechnology
ISSN:0304-8853
Online-Zugang:Volltext
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Beschreibung
Zusammenfassung:We review the current status of research on microwave nano-oscillators that utilize spin transfer devices with point-contact geometry, with an emphasis on the open questions that still prevent our full understanding of device properties. In particular, we examine those aspects that might affect irreproducibility of device performance. While there is a clear picture of the general principles that underlie the properties of the spin torque nano-oscillator, there are a number of details complicating the picture. We suggest that these details are potentially responsible for adversely affecting uniformity of performance from device to device. These details include (1) nonlinearities, (2) the Oersted field, (3) thermal and deterministic noise sources, and (4) non-uniformity of the spin accumulation. We suggest what role that these details might have in determining spin torque dynamics, and suggest particular avenues of investigation that might clarify whether or not these details are indeed responsible for device variability. This article is one of a series devoted to the subject of spin torque in this issue of the Journal of Magnetism and Magnetic Materials.
Bibliographie:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0304-8853
DOI:10.1016/j.jmmm.2007.12.022