A Compact Model for ISPP of 3-D Charge-Trap NAND Flash Memories

We developed a compact model for program transient simulation of 3-D charge-trap NAND flash on a bitline (BL) string level. By implanting the trapped charge parameters and the solutions obtained from modified 1-D Poisson equation into our unit cell model, we suggest that our model shows better accur...

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Vydané v:	IEEE transactions on electron devices Ročník 67; číslo 8; s. 3095 - 3101
Hlavní autori:	Kim, Minsoo, Kim, Sungbak, Shin, Hyungcheol
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	New York IEEE 01.08.2020 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Predmet:	3-D charge-trap NAND flash memories compact model Computer simulation Data models Electron traps Electron tunneling incremental step pulse programming (ISPP) Integrated circuit modeling Logic gates Mathematical model Mathematical models Model accuracy Parameter modification Poisson equation program transient operation simulation program with integrated circuit emphasis (SPICE) Solid modeling Three dimensional models Transient analysis Trapped charge Unit cell
ISSN:	0018-9383, 1557-9646
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