Kim, M., Kim, S., & Shin, H. (2020). A Compact Model for ISPP of 3-D Charge-Trap NAND Flash Memories. IEEE transactions on electron devices, 67(8), 3095-3101. https://doi.org/10.1109/TED.2020.3000448
Citace podle Chicago (17th ed.)Kim, Minsoo, Sungbak Kim, a Hyungcheol Shin. "A Compact Model for ISPP of 3-D Charge-Trap NAND Flash Memories." IEEE Transactions on Electron Devices 67, no. 8 (2020): 3095-3101. https://doi.org/10.1109/TED.2020.3000448.
Citace podle MLA (9th ed.)Kim, Minsoo, et al. "A Compact Model for ISPP of 3-D Charge-Trap NAND Flash Memories." IEEE Transactions on Electron Devices, vol. 67, no. 8, 2020, pp. 3095-3101, https://doi.org/10.1109/TED.2020.3000448.
Upozornění: Tyto citace jsou generovány automaticky. Nemusí být zcela správně podle citačních pravidel..