A 1.2-V 8.3-nJ CMOS Humidity Sensor for RFID Applications

This paper presents a fully integrated CMOS humidity sensor for a smart RFID sensor platform. The sensing element is a CMOS-compatible capacitive humidity sensor, which consists of top-metal finger-structure electrodes covered by a humidity-sensitive polyimide layer. Its humidity-sensitive capacitan...

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Vydáno v:	IEEE journal of solid-state circuits Ročník 48; číslo 10; s. 2469 - 2477
Hlavní autoři:	Zhichao Tan, Daamen, Roel, Humbert, Aurelie, Ponomarev, Youri V., Youngcheol Chae, Pertijs, Michiel A. P.
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	New York, NY IEEE 01.10.2013 Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Témata:	Amplifiers Applied sciences Capacitance Capacitance-to-digital converter capacitive-sensor interface Capacitors Circuit properties CMOS CMOS integrated circuits current-starved cascoded inverter (CSCI) delta-sigma modulator Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Humidity humidity sensor Integrated circuits Inverters Modulation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors Signal convertors Polyimide Moisture sensor Digital converter Sigma-delta modulation humidity sensor delta-sigma modulator Complementary MOS technology Humidity Electric power consumption Minimum energy Feedforward Transconductance capacitive-sensor interface current-starved cascoded inverter (CSCI) Inverter Modulator Operational amplifier Capacitive transducer Third order Measurement sensor Baseline Capacitance-to-digital converter Intelligent sensors Capacitance Low-power electronics Capacitor Radio frequency identification
ISSN:	0018-9200, 1558-173X
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Shrnutí:	This paper presents a fully integrated CMOS humidity sensor for a smart RFID sensor platform. The sensing element is a CMOS-compatible capacitive humidity sensor, which consists of top-metal finger-structure electrodes covered by a humidity-sensitive polyimide layer. Its humidity-sensitive capacitance is digitized by an energy-efficient capacitance-to-digital converter (CDC) based on a third-order delta-sigma modulator. This CDC employs current-efficient operational transconductance amplifiers based on current-starved cascoded inverters, whose limited output swing is accommodated by employing a feedforward loop-filter topology. A programmable offset capacitor is included to remove the sensor's baseline capacitance and thus reduce the required dynamic range. To reduce offset errors due to charge injection of the switches, the entire system is auto-zeroed. The proposed humidity sensor has been realized in a 0.16- μm CMOS technology. Measurement results show that the CDC performs a 12.5-bit capacitance-to-digital conversion in a measurement time of 0.8 ms, while consuming only 8.6 μA from a 1.2-V supply. This corresponds to a state-of-the-art figure-of-merit of 1.4 pJ/conversion-step. Combined with the co-integrated humidity sensing element, it provides a resolution of 0.05% RH in the range from 30% RH to 100% RH while consuming only 8.3 nJ per measurement, which is an order-of-magnitude less energy than the state-of-the-art.
Bibliografie:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 ObjectType-Article-2 ObjectType-Feature-1 content type line 23
ISSN:	0018-9200 1558-173X
DOI:	10.1109/JSSC.2013.2275661