Widely tunable and narrow-linewidth violet lasers enabled by UV-transparent materials

Embedding multi-wavelength lasers in photonic waveguide circuits is of interest for next-generation ion traps, such as for miniaturizing optical clocks or upscaling ion-based quantum computing. Critically, this path involves photonic integration of highly coherent lasers in the ultraviolet (UV) rang...

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Published in:Nature communications Vol. 16; no. 1; pp. 10294 - 9
Main Authors: Franken, C. A. A., Hendriks, W. A. P. M., Winkler, L. V., do Nascimento Jr, A. R., van Rees, A., Dijkstra, M., Mardani, S., Kienzler, D., Dekker, R., van Kerkhof, J., van der Slot, P. J. M., García-Blanco, S. M., Boller, K.-J.
Format: Journal Article
Language:English
Published: London Nature Publishing Group UK 21.11.2025
Nature Publishing Group
Nature Portfolio
Subjects:
639/624/1020/1093
639/624/1075/1079
639/624/400/1021
639/925/927/1021
Aluminum
Aluminum oxide
Circuits
Clocks
Computers
Diodes
Embedding
Frequency control
Gallium
Gallium nitrides
Humanities and Social Sciences
Ion traps (instrumentation)
Laser applications
Lasers
Light
Material absorption
multidisciplinary
Photonics
Propagation
Quantum computers
Quantum computing
Science
Science (multidisciplinary)
Semiconductor lasers
Semiconductors
Silica
Silicon nitride
Ultraviolet lasers
Waveguides
ISSN:2041-1723, 2041-1723
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Abstract Embedding multi-wavelength lasers in photonic waveguide circuits is of interest for next-generation ion traps, such as for miniaturizing optical clocks or upscaling ion-based quantum computing. Critically, this path involves photonic integration of highly coherent lasers in the ultraviolet (UV) range, which is presently obstructed by the transparency limit of materials used in established integrated waveguides. Here, we demonstrate the first integrated, extended cavity diode laser based solely on UV-transparent materials. We integrate aluminum oxide waveguide circuits with gallium nitride amplifiers to generate milliwatt-level on-chip output power near the ultraviolet range. The extended cavity approach allows for wide wavelength coverage and precise frequency control, which is demonstrated by tuning mode-hop-free to a Sr-transition frequency. Due to the inherent stability of photonic circuits and UV-compatible integration, the intrinsic laser linewidth reaches a record-low value around 300 kHz with better than 43-dB side-mode suppression. These results announce the viability of a novel class of integrated lasers that opens access to the UV. Integrating UV lasers is of interest for portable optical clocks and ion-based quantum computers, but material absorption has impeded progress. Here, authors demonstrate a violet integrated laser using UV-transparent materials with mW-level output, narrow linewidth and precise frequency control.
AbstractList Embedding multi-wavelength lasers in photonic waveguide circuits is of interest for next-generation ion traps, such as for miniaturizing optical clocks or upscaling ion-based quantum computing. Critically, this path involves photonic integration of highly coherent lasers in the ultraviolet (UV) range, which is presently obstructed by the transparency limit of materials used in established integrated waveguides. Here, we demonstrate the first integrated, extended cavity diode laser based solely on UV-transparent materials. We integrate aluminum oxide waveguide circuits with gallium nitride amplifiers to generate milliwatt-level on-chip output power near the ultraviolet range. The extended cavity approach allows for wide wavelength coverage and precise frequency control, which is demonstrated by tuning mode-hop-free to a Sr-transition frequency. Due to the inherent stability of photonic circuits and UV-compatible integration, the intrinsic laser linewidth reaches a record-low value around 300 kHz with better than 43-dB side-mode suppression. These results announce the viability of a novel class of integrated lasers that opens access to the UV.Integrating UV lasers is of interest for portable optical clocks and ion-based quantum computers, but material absorption has impeded progress. Here, authors demonstrate a violet integrated laser using UV-transparent materials with mW-level output, narrow linewidth and precise frequency control.
Embedding multi-wavelength lasers in photonic waveguide circuits is of interest for next-generation ion traps, such as for miniaturizing optical clocks or upscaling ion-based quantum computing. Critically, this path involves photonic integration of highly coherent lasers in the ultraviolet (UV) range, which is presently obstructed by the transparency limit of materials used in established integrated waveguides. Here, we demonstrate the first integrated, extended cavity diode laser based solely on UV-transparent materials. We integrate aluminum oxide waveguide circuits with gallium nitride amplifiers to generate milliwatt-level on-chip output power near the ultraviolet range. The extended cavity approach allows for wide wavelength coverage and precise frequency control, which is demonstrated by tuning mode-hop-free to a Sr-transition frequency. Due to the inherent stability of photonic circuits and UV-compatible integration, the intrinsic laser linewidth reaches a record-low value around 300 kHz with better than 43-dB side-mode suppression. These results announce the viability of a novel class of integrated lasers that opens access to the UV.
Abstract Embedding multi-wavelength lasers in photonic waveguide circuits is of interest for next-generation ion traps, such as for miniaturizing optical clocks or upscaling ion-based quantum computing. Critically, this path involves photonic integration of highly coherent lasers in the ultraviolet (UV) range, which is presently obstructed by the transparency limit of materials used in established integrated waveguides. Here, we demonstrate the first integrated, extended cavity diode laser based solely on UV-transparent materials. We integrate aluminum oxide waveguide circuits with gallium nitride amplifiers to generate milliwatt-level on-chip output power near the ultraviolet range. The extended cavity approach allows for wide wavelength coverage and precise frequency control, which is demonstrated by tuning mode-hop-free to a Sr-transition frequency. Due to the inherent stability of photonic circuits and UV-compatible integration, the intrinsic laser linewidth reaches a record-low value around 300 kHz with better than 43-dB side-mode suppression. These results announce the viability of a novel class of integrated lasers that opens access to the UV.
Embedding multi-wavelength lasers in photonic waveguide circuits is of interest for next-generation ion traps, such as for miniaturizing optical clocks or upscaling ion-based quantum computing. Critically, this path involves photonic integration of highly coherent lasers in the ultraviolet (UV) range, which is presently obstructed by the transparency limit of materials used in established integrated waveguides. Here, we demonstrate the first integrated, extended cavity diode laser based solely on UV-transparent materials. We integrate aluminum oxide waveguide circuits with gallium nitride amplifiers to generate milliwatt-level on-chip output power near the ultraviolet range. The extended cavity approach allows for wide wavelength coverage and precise frequency control, which is demonstrated by tuning mode-hop-free to a Sr-transition frequency. Due to the inherent stability of photonic circuits and UV-compatible integration, the intrinsic laser linewidth reaches a record-low value around 300 kHz with better than 43-dB side-mode suppression. These results announce the viability of a novel class of integrated lasers that opens access to the UV.Embedding multi-wavelength lasers in photonic waveguide circuits is of interest for next-generation ion traps, such as for miniaturizing optical clocks or upscaling ion-based quantum computing. Critically, this path involves photonic integration of highly coherent lasers in the ultraviolet (UV) range, which is presently obstructed by the transparency limit of materials used in established integrated waveguides. Here, we demonstrate the first integrated, extended cavity diode laser based solely on UV-transparent materials. We integrate aluminum oxide waveguide circuits with gallium nitride amplifiers to generate milliwatt-level on-chip output power near the ultraviolet range. The extended cavity approach allows for wide wavelength coverage and precise frequency control, which is demonstrated by tuning mode-hop-free to a Sr-transition frequency. Due to the inherent stability of photonic circuits and UV-compatible integration, the intrinsic laser linewidth reaches a record-low value around 300 kHz with better than 43-dB side-mode suppression. These results announce the viability of a novel class of integrated lasers that opens access to the UV.
Embedding multi-wavelength lasers in photonic waveguide circuits is of interest for next-generation ion traps, such as for miniaturizing optical clocks or upscaling ion-based quantum computing. Critically, this path involves photonic integration of highly coherent lasers in the ultraviolet (UV) range, which is presently obstructed by the transparency limit of materials used in established integrated waveguides. Here, we demonstrate the first integrated, extended cavity diode laser based solely on UV-transparent materials. We integrate aluminum oxide waveguide circuits with gallium nitride amplifiers to generate milliwatt-level on-chip output power near the ultraviolet range. The extended cavity approach allows for wide wavelength coverage and precise frequency control, which is demonstrated by tuning mode-hop-free to a Sr-transition frequency. Due to the inherent stability of photonic circuits and UV-compatible integration, the intrinsic laser linewidth reaches a record-low value around 300 kHz with better than 43-dB side-mode suppression. These results announce the viability of a novel class of integrated lasers that opens access to the UV. Integrating UV lasers is of interest for portable optical clocks and ion-based quantum computers, but material absorption has impeded progress. Here, authors demonstrate a violet integrated laser using UV-transparent materials with mW-level output, narrow linewidth and precise frequency control.
ArticleNumber 10294
Author van Rees, A.
García-Blanco, S. M.
Winkler, L. V.
Hendriks, W. A. P. M.
Dijkstra, M.
van Kerkhof, J.
do Nascimento Jr, A. R.
Franken, C. A. A.
van der Slot, P. J. M.
Boller, K.-J.
Dekker, R.
Kienzler, D.
Mardani, S.
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Snippet Embedding multi-wavelength lasers in photonic waveguide circuits is of interest for next-generation ion traps, such as for miniaturizing optical clocks or...
Abstract Embedding multi-wavelength lasers in photonic waveguide circuits is of interest for next-generation ion traps, such as for miniaturizing optical...
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Title Widely tunable and narrow-linewidth violet lasers enabled by UV-transparent materials
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