Hyperchaos in a second-order discrete memristor-based map model

This Letter presents a new second-order discrete map model, which is derived from a simple sampling switch-based memristor-capacitor circuit. The memristor-based map model has infinite unstable and critical stable fixed points, and exhibits chaotic and hyperchaotic behaviours via a period-doubling b...

Celý popis

Uložené v:
Podrobná bibliografia
Vydané v:Electronics letters Ročník 56; číslo 15; s. 769 - 770
Hlavní autori: Bao, Bo-Cheng, Li, Houzhen, Wu, Huagan, Zhang, Xi, Chen, Mo
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: The Institution of Engineering and Technology 23.07.2020
Predmet:
ISSN:0013-5194, 1350-911X, 1350-911X
On-line prístup:Získať plný text
Tagy: Pridať tag
Žiadne tagy, Buďte prvý, kto otaguje tento záznam!
Abstract This Letter presents a new second-order discrete map model, which is derived from a simple sampling switch-based memristor-capacitor circuit. The memristor-based map model has infinite unstable and critical stable fixed points, and exhibits chaotic and hyperchaotic behaviours via a period-doubling bifurcation scenario. These complex dynamical behaviours are confirmed by the phase portraits, iterative sequences and basins of attraction.
AbstractList This Letter presents a new second-order discrete map model, which is derived from a simple sampling switch-based memristor-capacitor circuit. The memristor-based map model has infinite unstable and critical stable fixed points, and exhibits chaotic and hyperchaotic behaviours via a period-doubling bifurcation scenario. These complex dynamical behaviours are confirmed by the phase portraits, iterative sequences and basins of attraction.
Author Wu, Huagan
Zhang, Xi
Li, Houzhen
Chen, Mo
Bao, Bo-Cheng
Author_xml – sequence: 1
  givenname: Bo-Cheng
  surname: Bao
  fullname: Bao, Bo-Cheng
  organization: School of Information Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu, People's Republic of China
– sequence: 2
  givenname: Houzhen
  surname: Li
  fullname: Li, Houzhen
  organization: School of Information Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu, People's Republic of China
– sequence: 3
  givenname: Huagan
  surname: Wu
  fullname: Wu, Huagan
  organization: School of Information Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu, People's Republic of China
– sequence: 4
  givenname: Xi
  orcidid: 0000-0002-1513-463X
  surname: Zhang
  fullname: Zhang, Xi
  organization: School of Information Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu, People's Republic of China
– sequence: 5
  givenname: Mo
  orcidid: 0000-0003-1841-7608
  surname: Chen
  fullname: Chen, Mo
  email: mchen@cczu.edu.cn
  organization: School of Information Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu, People's Republic of China
BookMark eNp9kE9LAzEQxYNUsNbe_AB79GDq5M_udk-ipbXCghcFbyGbTDCyuynJivTbu6WeRD09hnm_ebw5J5M-9EjIJYMFA1ndYLvgwMeBlfyETJnIgVaMvU7IFIAJmrNKnpF5Sr4BJpksQLIpud3udxjNmw4p832ms4Qm9JaGaDFm1icTccCswy76NIRIG53QZp3eZV2w2F6QU6fbhPNvnZGXzfp5taX108Pj6q6mRuQcqCgg19Y0hcAld9w5B0spQFjgJgc-qhWal67Jy6UoK-kK7ho77hkvdcOlmJHr410TQ0oRndpF3-m4VwzUob_CVh36q0P_0c5_2I0f9OBDP0Tt27-g_Ah9-hb3_waodV3z-w2UjMHIXR05j4N6Dx-xHz_xe8QXyeh7vw
CitedBy_id crossref_primary_10_1007_s11071_024_10329_z
crossref_primary_10_1016_j_chaos_2022_112885
crossref_primary_10_1007_s11071_025_11568_4
crossref_primary_10_1016_j_chaos_2023_114303
crossref_primary_10_1080_16583655_2021_2014679
crossref_primary_10_1631_jzus_A2300651
crossref_primary_10_1109_TCSI_2024_3423805
crossref_primary_10_1088_1674_1056_ac7294
crossref_primary_10_1007_s11071_024_10226_5
crossref_primary_10_1016_j_chaos_2024_115471
crossref_primary_10_1088_1402_4896_ad7361
crossref_primary_10_1007_s11071_024_09452_8
crossref_primary_10_1016_j_chaos_2024_115070
crossref_primary_10_1109_TIM_2025_3570347
crossref_primary_10_1016_j_chaos_2025_117152
crossref_primary_10_3390_math11194166
crossref_primary_10_1016_j_neunet_2025_107213
crossref_primary_10_1016_j_cjph_2024_04_002
crossref_primary_10_1016_j_chaos_2024_115904
crossref_primary_10_3390_math11061319
crossref_primary_10_1016_j_chaos_2022_112389
crossref_primary_10_1016_j_apm_2022_09_015
crossref_primary_10_1007_s11071_025_11729_5
crossref_primary_10_1109_ACCESS_2024_3474801
crossref_primary_10_1140_epjs_s11734_024_01173_8
crossref_primary_10_1002_aelm_202101127
crossref_primary_10_1088_1402_4896_ad6696
crossref_primary_10_1109_TCSII_2022_3217674
crossref_primary_10_1080_0954898X_2022_2131921
crossref_primary_10_1109_TCYB_2025_3565333
crossref_primary_10_1088_1402_4896_ac3153
crossref_primary_10_1109_TII_2024_3353798
crossref_primary_10_1016_j_vlsi_2022_12_003
crossref_primary_10_1007_s11071_024_10364_w
crossref_primary_10_1016_j_chaos_2024_114993
crossref_primary_10_1007_s11071_023_08652_y
crossref_primary_10_1016_j_chaos_2023_113807
crossref_primary_10_1140_epjp_s13360_022_02512_1
crossref_primary_10_1016_j_vlsi_2023_102131
crossref_primary_10_3389_fphy_2025_1617964
crossref_primary_10_1109_TCSII_2022_3151802
crossref_primary_10_3390_sym14040800
crossref_primary_10_1109_TCSII_2021_3118646
crossref_primary_10_1140_epjs_s11734_024_01320_1
crossref_primary_10_3390_sym14051019
crossref_primary_10_1007_s11071_024_09905_0
crossref_primary_10_1080_10236198_2023_2172334
crossref_primary_10_1007_s11071_021_06544_7
crossref_primary_10_1109_TCSI_2021_3082895
crossref_primary_10_1016_j_chaos_2024_115317
crossref_primary_10_1140_epjs_s11734_022_00483_z
crossref_primary_10_1140_epjp_s13360_023_04242_4
crossref_primary_10_1109_TIE_2020_3022539
crossref_primary_10_3390_fractalfract7100728
crossref_primary_10_1016_j_aeue_2020_153539
crossref_primary_10_1016_j_optlastec_2023_109543
crossref_primary_10_1063_5_0187297
crossref_primary_10_1109_TII_2021_3086819
crossref_primary_10_1016_j_chaos_2023_113661
crossref_primary_10_1109_TCSII_2021_3072393
crossref_primary_10_1007_s11071_022_07955_w
crossref_primary_10_1109_TII_2021_3119387
crossref_primary_10_1007_s11071_021_06692_w
crossref_primary_10_1016_j_chaos_2025_116012
crossref_primary_10_1088_1674_1056_ac20c7
crossref_primary_10_1140_epjp_s13360_022_02433_z
crossref_primary_10_1016_j_chaos_2023_113708
crossref_primary_10_1109_TIE_2024_3451052
crossref_primary_10_1016_j_chaos_2025_116537
crossref_primary_10_1016_j_chaos_2023_113429
crossref_primary_10_1140_epjs_s11734_022_00645_z
crossref_primary_10_3390_mi14112090
crossref_primary_10_1109_ACCESS_2022_3188787
crossref_primary_10_1631_jzus_A2200469
crossref_primary_10_3390_sym15101879
crossref_primary_10_1007_s11071_021_07132_5
crossref_primary_10_1016_j_chaos_2025_116230
crossref_primary_10_1140_epjs_s11734_022_00559_w
crossref_primary_10_3390_e24060786
crossref_primary_10_1016_j_chaos_2025_116227
crossref_primary_10_1016_j_aeue_2022_154522
crossref_primary_10_1088_1402_4896_acafac
crossref_primary_10_1007_s11042_023_17863_9
crossref_primary_10_3390_math11204308
crossref_primary_10_1016_j_chaos_2022_113024
crossref_primary_10_3390_fractalfract8050258
crossref_primary_10_1063_5_0246293
crossref_primary_10_1109_TIE_2023_3281687
crossref_primary_10_1007_s11071_021_06993_0
crossref_primary_10_1016_j_chaos_2021_111064
crossref_primary_10_1088_1402_4896_adee5a
crossref_primary_10_1140_epjs_s11734_025_01533_y
crossref_primary_10_1016_j_chaos_2025_116480
crossref_primary_10_1049_ell2_12616
crossref_primary_10_3390_fractalfract8060322
crossref_primary_10_3390_electronics14020311
crossref_primary_10_3390_biomimetics9090543
crossref_primary_10_3390_electronics11010153
Cites_doi 10.1109/TIE.2019.2907444
10.1109/TCSI.2012.2188957
10.1007/s11431-019-1450-6
10.1109/TIE.2018.2833049
10.1088/0268-1242/29/10/104001
ContentType Journal Article
Copyright The Institution of Engineering and Technology
2020 The Institution of Engineering and Technology
Copyright_xml – notice: The Institution of Engineering and Technology
– notice: 2020 The Institution of Engineering and Technology
DBID AAYXX
CITATION
DOI 10.1049/el.2020.1172
DatabaseName CrossRef
DatabaseTitle CrossRef
DatabaseTitleList
CrossRef

DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 1350-911X
EndPage 770
ExternalDocumentID 10_1049_el_2020_1172
ELL2BF07110
Genre rapidPublication
GrantInformation_xml – fundername: Natural Science Foundations of Jiangsu Province, China
  grantid: BK20191451
– fundername: National Natural Science Foundation of China
  grantid: 51777016
– fundername: National Natural Science Foundation of China
  grantid: 61801054
– fundername: National Natural Science Foundation of China
  funderid: 51777016
– fundername: National Natural Science Foundation of China
  funderid: 61801054
– fundername: Natural Science Foundations of Jiangsu Province, China
  funderid: BK20191451
GroupedDBID 0R
24P
29G
4IJ
5GY
6IK
8VB
AAJGR
ABPTK
ABZEH
ACGFS
ACIWK
AENEX
ALMA_UNASSIGNED_HOLDINGS
BFFAM
CS3
DU5
ESX
F5P
HZ
IFIPE
IPLJI
JAVBF
KBT
LAI
LOTEE
LXI
LXO
LXU
M43
MS
NADUK
NXXTH
O9-
OCL
P2P
QWB
RIE
RNS
RUI
TN5
U5U
UNMZH
UNR
WH7
X
ZL0
ZZ
-4A
-~X
.DC
0R~
0ZK
1OC
2QL
3EH
4.4
8FE
8FG
96U
AAHHS
AAHJG
ABJCF
ABQXS
ACCFJ
ACCMX
ACESK
ACGFO
ACXQS
ADEYR
ADIYS
ADZOD
AEEZP
AEGXH
AEQDE
AFAZI
AFKRA
AI.
AIAGR
AIWBW
AJBDE
ALUQN
ARAPS
AVUZU
BBWZM
BENPR
BGLVJ
CCPQU
EBS
EJD
ELQJU
F8P
GOZPB
GROUPED_DOAJ
GRPMH
HCIFZ
HZ~
IAO
IFBGX
ITC
K1G
K7-
L6V
M7S
MCNEO
MS~
OK1
P0-
P62
PTHSS
R4Z
RIG
VH1
~ZZ
AAMMB
AAYXX
AEFGJ
AFFHD
AGXDD
AIDQK
AIDYY
CITATION
IDLOA
PHGZM
PHGZT
PQGLB
WIN
ID FETCH-LOGICAL-c3520-3605adcb63e82f2fff084303d02c5023d0d3a27fb5783794f62fbd03d127ab243
IEDL.DBID 24P
ISICitedReferencesCount 112
ISICitedReferencesURI http://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=Summon&SrcAuth=ProQuest&DestLinkType=CitingArticles&DestApp=WOS_CPL&KeyUT=000555007400010&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D
ISSN 0013-5194
1350-911X
IngestDate Wed Oct 29 21:15:41 EDT 2025
Tue Nov 18 22:38:59 EST 2025
Wed Jan 22 16:59:06 EST 2025
Tue Jan 05 21:44:06 EST 2021
IsDoiOpenAccess false
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Issue 15
Keywords memristors
bifurcation
second-order discrete map model
chaos
second-order discrete memristor-based map model
critical stable fixed points
simple sampling switch-based memristor-capacitor circuit
infinite unstable points
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c3520-3605adcb63e82f2fff084303d02c5023d0d3a27fb5783794f62fbd03d127ab243
ORCID 0000-0002-1513-463X
0000-0003-1841-7608
OpenAccessLink https://ietresearch.onlinelibrary.wiley.com/doi/pdfdirect/10.1049/el.2020.1172
PageCount 2
ParticipantIDs crossref_primary_10_1049_el_2020_1172
crossref_citationtrail_10_1049_el_2020_1172
wiley_primary_10_1049_el_2020_1172_ELL2BF07110
iet_journals_10_1049_el_2020_1172
ProviderPackageCode RUI
PublicationCentury 2000
PublicationDate 2020-07-23
PublicationDateYYYYMMDD 2020-07-23
PublicationDate_xml – month: 07
  year: 2020
  text: 2020-07-23
  day: 23
PublicationDecade 2020
PublicationTitle Electronics letters
PublicationYear 2020
Publisher The Institution of Engineering and Technology
Publisher_xml – name: The Institution of Engineering and Technology
References Kim, H.; Sah, M.P.; Yang, C. (C1) 2012; 59
Hua, Z.; Zhou, B.; Zhou, Y. (C5) 2019; 66
Bao, H.; Chen, M.; Wu, H.G. (C3) 2020; 63
Chen, M.; Sun, M.X.; Bao, H. (C2) 2020; 67
Chua, L.O. (C4) 2014; 29
2020; 63
2019; 66
2020; 67
2014; 29
2012; 59
e_1_2_8_3_1
e_1_2_8_2_1
e_1_2_8_5_1
e_1_2_8_4_1
e_1_2_8_6_1
References_xml – volume: 59
  start-page: 2422
  issue: 10
  year: 2012
  end-page: 2431
  ident: C1
  article-title: Memristor emulator for memristor circuit applications
  publication-title: IEEE Trans. Circuits Syst.-I: Regul. Pap.
– volume: 63
  start-page: 603
  issue: 4
  year: 2020
  end-page: 613
  ident: C3
  article-title: Memristor initial-boosted coexisting plane bifurcations and its extreme multi-stability reconstitution in two-memristor-based dynamical system
  publication-title: Sci. China Technol. Sci.
– volume: 66
  start-page: 1273
  issue: 2
  year: 2019
  end-page: 1284
  ident: C5
  article-title: Sine chaotification model for enhancing chaos and its hardware implementation
  publication-title: IEEE Trans. Ind. Electron.
– volume: 29
  start-page: 104001
  issue: 10
  year: 2014
  ident: C4
  article-title: If it's pinched it's a memristor
  publication-title: Semicond. Sci. Technol.
– volume: 67
  start-page: 2197
  issue: 3
  year: 2020
  end-page: 2206
  ident: C2
  article-title: Flux-charge analysis of two-memristor-based Chua's circuit: dimensionality decreasing model for detecting extreme multistability
  publication-title: IEEE Trans. Ind. Electron.
– volume: 59
  start-page: 2422
  issue: 10
  year: 2012
  end-page: 2431
  article-title: Memristor emulator for memristor circuit applications
  publication-title: IEEE Trans. Circuits Syst.‐I: Regul. Pap.
– volume: 66
  start-page: 1273
  issue: 2
  year: 2019
  end-page: 1284
  article-title: Sine chaotification model for enhancing chaos and its hardware implementation
  publication-title: IEEE Trans. Ind. Electron.
– volume: 63
  start-page: 603
  issue: 4
  year: 2020
  end-page: 613
  article-title: Memristor initial‐boosted coexisting plane bifurcations and its extreme multi‐stability reconstitution in two‐memristor‐based dynamical system
  publication-title: Sci. China Technol. Sci.
– volume: 29
  start-page: 104001
  issue: 10
  year: 2014
  article-title: If it's pinched it's a memristor
  publication-title: Semicond. Sci. Technol.
– volume: 67
  start-page: 2197
  issue: 3
  year: 2020
  end-page: 2206
  article-title: Flux‐charge analysis of two‐memristor‐based Chua's circuit: dimensionality decreasing model for detecting extreme multistability
  publication-title: IEEE Trans. Ind. Electron.
– ident: e_1_2_8_3_1
  doi: 10.1109/TIE.2019.2907444
– ident: e_1_2_8_2_1
  doi: 10.1109/TCSI.2012.2188957
– ident: e_1_2_8_4_1
  doi: 10.1007/s11431-019-1450-6
– ident: e_1_2_8_6_1
  doi: 10.1109/TIE.2018.2833049
– ident: e_1_2_8_5_1
  doi: 10.1088/0268-1242/29/10/104001
SSID ssib014146041
ssj0012997
Score 2.60381
Snippet This Letter presents a new second-order discrete map model, which is derived from a simple sampling switch-based memristor-capacitor circuit. The...
This Letter presents a new second‐order discrete map model, which is derived from a simple sampling switch‐based memristor‐capacitor circuit. The...
SourceID crossref
wiley
iet
SourceType Enrichment Source
Index Database
Publisher
StartPage 769
SubjectTerms bifurcation
chaos
critical stable fixed points
infinite unstable points
Information and communications
memristors
second‐order discrete map model
second‐order discrete memristor‐based map model
simple sampling switch‐based memristor‐capacitor circuit
Title Hyperchaos in a second-order discrete memristor-based map model
URI http://digital-library.theiet.org/content/journals/10.1049/el.2020.1172
https://onlinelibrary.wiley.com/doi/abs/10.1049%2Fel.2020.1172
Volume 56
WOSCitedRecordID wos000555007400010&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
journalDatabaseRights – providerCode: PRVWIB
  databaseName: Wiley Online Library Free Content
  customDbUrl:
  eissn: 1350-911X
  dateEnd: 99991231
  omitProxy: false
  ssIdentifier: ssj0012997
  issn: 0013-5194
  databaseCode: WIN
  dateStart: 20130101
  isFulltext: true
  titleUrlDefault: https://onlinelibrary.wiley.com
  providerName: Wiley-Blackwell
– providerCode: PRVWIB
  databaseName: Wiley Online Library Open Access (Activated by CARLI)
  customDbUrl:
  eissn: 1350-911X
  dateEnd: 99991231
  omitProxy: false
  ssIdentifier: ssj0012997
  issn: 0013-5194
  databaseCode: 24P
  dateStart: 20130101
  isFulltext: true
  titleUrlDefault: https://authorservices.wiley.com/open-science/open-access/browse-journals.html
  providerName: Wiley-Blackwell
link http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV07T8MwELagMMDAG1FeMhJMKCKxEzcZoWpVpKrqwKNb5NixVKlNq6Qw8xP4jfwS7pxQtUOREEuG2I4in-_uO5_9HSHXJpCaSakcJZLEAX-sHOkJ5mjjySgIVBjYjOlLt9HrhYNB1K823PAuTMkPMd9wQ82w9hoVXCZlFRIAtShETBwwm3UEE7zheTzE0g3M78-zCGBqbXEVHrio1IPq4DuMv1scveSS1ofpbBmoWk_T3v3vP-6RnQpj0vtyUeyTtTQ7INsLzIOHpNmB-BNpkiYFHWZU0gIDY_318Wm5OCle1s0BT9NxOrbsAzk0ocfTdCyn1NbPOSLP7dZTs-NU9RQcBTALzC2ELlKrRPA0ZIYZY9zQBxemXaYC8N3a1VyyhklAiznoqRHMJBraPdaQCfP5Mallkyw9IdSHuFFFRnCder4GmKgh0gmFkALFzVSd3P5MaawqsnGseTGKbdLbj-J0FOPUINk4q5Obee9pSbKxot8VSCeutKxY0aeUyK8filvdLntoA7zy3NO_DjgjW_geN3gZPye1Wf6WXpBN9T4bFvmlXYHwfH3sfQPRRtrR
linkProvider Wiley-Blackwell
linkToHtml http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LS8NAEF60CurBt1ifK-hJgsnm0eSopaXFGDxU7S1s9gGFvmiqZ3-Cv9Ff4swmlnqoIJ53JoTdnZlvdna_IeRS-1wyzoUlgiyzIB4LizsBs6R2eOT7IvRNxfQ5riVJ2O1Gj2WfU3wLU_BDzA7c0DKMv0YDxwPpIuH0kCRTYeWAmbIj-OAVD7AG9m54aSezMgL4WtNdxfVttOpuefMd9G_mtX_EpOWemv5EqibUNLf-_ZPbZLNEmfS22BY7ZEkNd8nGHPfgHqm3IANFoqRRTntDymmOqbH8fP8wbJwUn-tOAFHTgRoY_oEJDGHMk3TAx9R00NknT81Gp96yyo4KlgCgBQ4XkhcuRRa4KmSaaa3t0IMgJm0mfIje0pYuZzWdgR27YKk6YDqTMO6wGs-Y5x6QynA0VIeEepA5ikgHrlSOJwEoSsh1wiDgAS44E1Vy_T2nqSjpxrHrRT81ZW8vSlU_xalBunFWJVcz6XFBs7FA7gKWJy3tLF8gUyzJrx9KG3HM7poAsBz76K8K52St1XmI07id3B-TdZTB417mnpDKdPKqTsmqeJv28smZ2Y5fU67eGg
linkToPdf http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LS8NAEF60iujBt1ifK-hJgsnmfdTaULGUHlR6C5t9QKEvkurZn-Bv9Jc4s4mlHiqI550JYee9s_sNIZfa55JxLiwRZJkF8VhY3AmYJbXDY98XkW86pi_tsNOJer24W805xbcwJT7E7MANLcP4azRwNZG6LDg9BMlU2Dlgpu0IPnjF80MH1Zp53VkbAXytma7i-jZada-6-Q78N_PcP2LScl9Nf2aqJtQkW__-yW2yWWWZ9LZUix2ypEa7ZGMOe3CPNFpQgSJQ0rig_RHltMDSWH6-fxg0TorPdXPIqOlQDQ3-QA5LGPMkHfIJNRN09slz0nxqtKxqooIlINEChwvFC5ciC1wVMc201nbkQRCTNhM-RG9pS5ezUGdgxy5Yqg6YziSsOyzkGfPcA1IbjUfqkFAPKkcR68CVyvEkJIoSap0oCHiAAmeiTq6_9zQVFdw4Tr0YpKbt7cWpGqS4NQg3zurkakY9KWE2FtBdgHjSys6KBTSlSH79UNpst9ldAgmWYx_9leGcrHXvk7T90Hk8JutIgqe9zD0htWn-qk7Jqnib9ov8zGjjF50R3TE
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Hyperchaos+in+a+second-order+discrete+memristor-based+map+model&rft.jtitle=Electronics+letters&rft.au=Bao%2C+Bo-Cheng&rft.au=Li%2C+Houzhen&rft.au=Wu%2C+Huagan&rft.au=Zhang%2C+Xi&rft.date=2020-07-23&rft.pub=The+Institution+of+Engineering+and+Technology&rft.issn=0013-5194&rft.eissn=1350-911X&rft.volume=56&rft.issue=15&rft.spage=769&rft.epage=770&rft_id=info:doi/10.1049%2Fel.2020.1172&rft.externalDocID=10_1049_el_2020_1172
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0013-5194&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0013-5194&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0013-5194&client=summon