Largely enhanced dielectric properties of polymer composites with HfO2 nanoparticles for high-temperature film capacitors
Polymer dielectrics are preferred materials for high-energy-density capacitive energy storage. In particular, high-temperature dielectrics that can withstand harsh conditions, e.g., ≥150 °C, is of crucial importance for advanced electronics and electrical power systems. Herein, high-temperature diel...
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| Vydáno v: | Composites science and technology Ročník 201; s. 108528 |
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| Hlavní autoři: | , , , , , , , , , , |
| Médium: | Journal Article |
| Jazyk: | angličtina |
| Vydáno: |
Barking
Elsevier Ltd
05.01.2021
Elsevier BV |
| Témata: | |
| ISSN: | 0266-3538, 1879-1050 |
| On-line přístup: | Získat plný text |
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| Shrnutí: | Polymer dielectrics are preferred materials for high-energy-density capacitive energy storage. In particular, high-temperature dielectrics that can withstand harsh conditions, e.g., ≥150 °C, is of crucial importance for advanced electronics and electrical power systems. Herein, high-temperature dielectric polymer composites composed of polyetherimide (PEI) matrix and hafnium oxide (HfO2) nanoparticles are presented. It is found that the incorporation of HfO2 with a moderate dielectric constant and a wide bandgap improves the dielectric constant and simultaneously reduces the high-field leakage current density of the PEI nanocomposites. As a result, the PEI/HfO2 composites exhibit superior energy storage performance to the current high-temperature engineering polymers at elevated temperatures. Specifically, the nanocomposite with 3 vol% HfO2 displays a discharged energy density of 2.82 J/cm3 at 150 °C, which is 77% higher than neat PEI. This work demonstrates the effectiveness of incorporation of the nanofiller with a medium dielectric constant into the polymer on the improvement of high-temperature capacitive properties of the polymer composites.
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| Bibliografie: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
| ISSN: | 0266-3538 1879-1050 |
| DOI: | 10.1016/j.compscitech.2020.108528 |