GaN HEMT reliability

This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the v...

Celý popis

Uložené v:
Podrobná bibliografia
Vydané v:Microelectronics and reliability Ročník 49; číslo 9; s. 1200 - 1206
Hlavní autori: del Alamo, J.A., Joh, J.
Médium: Journal Article Konferenčný príspevok..
Jazyk:English
Vydavateľské údaje: Kidlington Elsevier Ltd 01.09.2009
Elsevier
Predmet:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Gate current
Barrier layer
Electric stress
Voltage control
Failures
High electron mobility transistor
High voltage
Piezoelectric materials
Mechanical stress
Drain current
Parasitic resistance
Leakage current
Reliability
Damaging
ISSN:0026-2714, 1872-941X
On-line prístup:Získať plný text
Tagy: Pridať tag
Žiadne tagy, Buďte prvý, kto otaguje tento záznam!
Popis
Shrnutí:This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge. These defects reduce the drain current, increase the parasitic resistance and provide a path for excess gate current. There is mounting evidence for the role of the inverse piezoelectric effect in introducing mechanical stress in the AlGaN barrier layer and eventually producing these defects. The key signature of this mechanism is a sudden and non-reversible increase in the gate leakage current of several orders of magnitude. This degradation mechanism is voltage driven and characterized by a critical voltage below which degradation does not occur. This hypothesis suggests several paths to enhance the electrical reliability of GaN HEMTs which are borne out by experiments.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2009.07.003