GaN HEMT reliability

This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the v...

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Vydané v:	Microelectronics and reliability Ročník 49; číslo 9; s. 1200 - 1206
Hlavní autori:	del Alamo, J.A., Joh, J.
Médium:	Journal Article Konferenčný príspevok..
Jazyk:	English
Vydavateľské údaje:	Kidlington Elsevier Ltd 01.09.2009 Elsevier
Predmet:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Gate current Barrier layer Electric stress Voltage control Failures High electron mobility transistor High voltage Piezoelectric materials Mechanical stress Drain current Parasitic resistance Leakage current Reliability Damaging
ISSN:	0026-2714, 1872-941X
On-line prístup:	Získať plný text
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