GaN HEMT reliability

This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the v...

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Bibliographic Details
Published in:	Microelectronics and reliability Vol. 49; no. 9; pp. 1200 - 1206
Main Authors:	del Alamo, J.A., Joh, J.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Kidlington Elsevier Ltd 01.09.2009 Elsevier
Subjects:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Gate current Barrier layer Electric stress Voltage control Failures High electron mobility transistor High voltage Piezoelectric materials Mechanical stress Drain current Parasitic resistance Leakage current Reliability Damaging
ISSN:	0026-2714, 1872-941X
Online Access:	Get full text
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