GaN HEMT reliability
This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the v...
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| Published in: | Microelectronics and reliability Vol. 49; no. 9; pp. 1200 - 1206 |
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| Main Authors: | , |
| Format: | Journal Article Conference Proceeding |
| Language: | English |
| Published: |
Kidlington
Elsevier Ltd
01.09.2009
Elsevier |
| Subjects: | |
| ISSN: | 0026-2714, 1872-941X |
| Online Access: | Get full text |
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| Abstract | This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge. These defects reduce the drain current, increase the parasitic resistance and provide a path for excess gate current. There is mounting evidence for the role of the inverse piezoelectric effect in introducing mechanical stress in the AlGaN barrier layer and eventually producing these defects. The key signature of this mechanism is a sudden and non-reversible increase in the gate leakage current of several orders of magnitude. This degradation mechanism is voltage driven and characterized by a critical voltage below which degradation does not occur. This hypothesis suggests several paths to enhance the electrical reliability of GaN HEMTs which are borne out by experiments. |
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| AbstractList | This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier or at its surface in the vicinity of the gate edge. These defects reduce the drain current, increase the parasitic resistance and provide a path for excess gate current. There is mounting evidence for the role of the inverse piezoelectric effect in introducing mechanical stress in the AlGaN barrier layer and eventually producing these defects. The key signature of this mechanism is a sudden and non-reversible increase in the gate leakage current of several orders of magnitude. This degradation mechanism is voltage driven and characterized by a critical voltage below which degradation does not occur. This hypothesis suggests several paths to enhance the electrical reliability of GaN HEMTs which are borne out by experiments. |
| Author | del Alamo, J.A. Joh, J. |
| Author_xml | – sequence: 1 givenname: J.A. surname: del Alamo fullname: del Alamo, J.A. email: alamo@mit.edu – sequence: 2 givenname: J. surname: Joh fullname: Joh, J. |
| BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21965248$$DView record in Pascal Francis |
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| CODEN | MCRLAS |
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| Cites_doi | 10.1109/IEDM.2007.4418953 10.1109/TED.2005.852543 10.1063/1.117598 10.1063/1.1840111 10.1109/RELPHY.2007.369954 10.1109/LED.2008.917815 10.1109/RELPHY.2007.369936 10.1063/1.2008388 10.1109/16.711351 10.1007/s11664-004-0192-9 10.1109/16.944179 10.1109/16.55752 10.1063/1.125560 10.1049/el:20057802 10.1109/TDMR.2008.923743 10.1002/pssc.200880885 10.1109/LED.2009.2016440 10.1109/IEDM.2006.346798 10.1109/LED.2003.813375 10.1109/IEDM.2006.346799 10.1109/LED.2008.2000919 10.1109/LED.2008.2003073 10.1109/DRC.2007.4373639 10.1109/RELPHY.2008.4558923 10.1109/TDMR.2005.853515 |
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| PublicationPlace | Kidlington |
| PublicationPlace_xml | – name: Kidlington |
| PublicationTitle | Microelectronics and reliability |
| PublicationYear | 2009 |
| Publisher | Elsevier Ltd Elsevier |
| Publisher_xml | – name: Elsevier Ltd – name: Elsevier |
| References | Lee, Koleske, Cross, Floro, Waldrip, Wise (bib19) 2004; 85 Valizadeh, Pavlidis (bib30) 2005; 52 Joh J, del Alamo JA. Mechanisms for electrical degradation of GaN high-electron mobility transistors. In: IEEE IEDM tech. digest; 2006. p. 415–8. Marcon, Lorenz, Derluyn, Das, Medjdoub, Cheng (bib32) 2009; 6 Dieci, Sozzi, Menozzi, Tediosi, Lanzieri, Canali (bib15) 2001; 48 Lee, Witkowski, Tserng, Saunier, Birkhahn, Olson (bib29) 2005; 41 Derluyn, Boeykens, Cheng, Vandersmissen, Das, Ruythooren (bib31) 2005; 98 Saunier P, Lee C, Balistreri A, Dumka D, Jimenez J, Tserng HQ, et al. Progress in GaN performances and reliability. In: IEEE DRC conference digest; 2007. p. 35–6. Matsushita K, Teramoto S, Sakurai H, Takada Y, Shim J, Kawasaki H et al. Reliability study of AlGaN/GaN HEMTs device. In: CS Mantech proceeding; 2007. p. 87–9. Joh, del Alamo, Jimenez (bib25) 2008; 29 Joh J, del Alamo JA. Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors. In: IEEE IEDM tech. digest; 2008. p. 461–4. Joh J, Xia L, del Alamo JA. Gate current degradation mechanisms of GaN high electron mobility transistors. In: IEEE IEDM tech. digest; 2007. p. 385–8. Joh, del Alamo (bib17) 2008; 29 Piner EL, Singhal S, Rajagopal P, Therrien R, Roberts JC, Li T. Device degradation phenomena in GaN HFET technology: status mechanisms and opportunities. In: IEEE IEDM tech. digest; 2006. p. 1–4. Jimenez JL, Chowdhury U. X-band GaN FET reliability. In: IEEE int. rel. phys. symp. proceedings; 2008. Coffie R, Chen Y, Smorchkova IP, Heying B, Gambin V, Sutton W, et al. Temperature and voltage dependent RF degradation study in AlGaN/GaN HEMTs. In: IEEE IRPS proc.; 2007. p. 568–9. Sozza A, Dua C, Morvan E, diForte-Poisson MA, Delage S, Rampazzo F, et al. Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress. In: IEEE IEDM tech. digest; 2005. p. 590–3. Jimenez JL, Chowdhury U, Kao MY, Balistreri T, Lee C, Saunier P, et al. Failure analysis of X-band GaN FETs. Presented at ROCS; 2006. Joshin K, Kikkawa T. High-power and high-efficiency GaN HEMT amplifiers. In: IEEE radio wireless sympos; 2008. p. 65–8. Chung, Jeng, Moon, Ko, Hu (bib12) 1990; 37 Meneghesso, Verzellesi, Danesin, Rampazzo, Zanon, Tazzoli (bib11) 2008; 8 Valizadeh, Pavlidis (bib9) 2005; 5 Gotthold, Guo, Birkhahn, Albert, Florescu, Peres (bib20) 2004; 33 Joh J, del Alamo JA. Effects of temperature on electrical degradation of GaN high electron mobility transistors. In: ICNS proceedings; 2007. p. 39. Meneghesso, Paccagnella, Haddab, Canali, Zanoni (bib13) 1996; 69 Mertens SD, del Alamo JA. Electrical degradation of InAlAs/InGaAs metamorphic high-electron mobility transistors. In: IEEE IEDM tech. digest; 2001 p. 193–6. Zanoni, Danesin, Meneghini, Cetronio, Lanzieri, Peroni (bib24) 2009; 30 Chowdhury, Jimenez, Lee, Beam, Saunier, Balistreri (bib28) 2008; 29 Guy, Muensit, Goldys (bib18) 1999; 75 Kim, Thompson, Tilak, Prunty, Shealy, Eastman (bib8) 2003; 24 Conway AM, Chen M, Hashimoto P, Willadsen PJ, Micovic M. Accelerated RF life testing of GaN HFETs. In: IRPS proceedings; 2007. p. 472–5. Somerville, Del Alamo, Saunier (bib22) 1998; 45 10.1016/j.microrel.2009.07.003_bib14 Meneghesso (10.1016/j.microrel.2009.07.003_bib11) 2008; 8 10.1016/j.microrel.2009.07.003_bib16 Joh (10.1016/j.microrel.2009.07.003_bib25) 2008; 29 Lee (10.1016/j.microrel.2009.07.003_bib29) 2005; 41 10.1016/j.microrel.2009.07.003_bib10 10.1016/j.microrel.2009.07.003_bib7 Valizadeh (10.1016/j.microrel.2009.07.003_bib9) 2005; 5 Joh (10.1016/j.microrel.2009.07.003_bib17) 2008; 29 Derluyn (10.1016/j.microrel.2009.07.003_bib31) 2005; 98 10.1016/j.microrel.2009.07.003_bib6 Chowdhury (10.1016/j.microrel.2009.07.003_bib28) 2008; 29 Kim (10.1016/j.microrel.2009.07.003_bib8) 2003; 24 Valizadeh (10.1016/j.microrel.2009.07.003_bib30) 2005; 52 Dieci (10.1016/j.microrel.2009.07.003_bib15) 2001; 48 10.1016/j.microrel.2009.07.003_bib27 10.1016/j.microrel.2009.07.003_bib26 Zanoni (10.1016/j.microrel.2009.07.003_bib24) 2009; 30 Lee (10.1016/j.microrel.2009.07.003_bib19) 2004; 85 10.1016/j.microrel.2009.07.003_bib1 10.1016/j.microrel.2009.07.003_bib3 10.1016/j.microrel.2009.07.003_bib21 10.1016/j.microrel.2009.07.003_bib2 10.1016/j.microrel.2009.07.003_bib5 10.1016/j.microrel.2009.07.003_bib23 10.1016/j.microrel.2009.07.003_bib4 Guy (10.1016/j.microrel.2009.07.003_bib18) 1999; 75 Somerville (10.1016/j.microrel.2009.07.003_bib22) 1998; 45 Marcon (10.1016/j.microrel.2009.07.003_bib32) 2009; 6 Chung (10.1016/j.microrel.2009.07.003_bib12) 1990; 37 Meneghesso (10.1016/j.microrel.2009.07.003_bib13) 1996; 69 Gotthold (10.1016/j.microrel.2009.07.003_bib20) 2004; 33 |
| References_xml | – reference: Piner EL, Singhal S, Rajagopal P, Therrien R, Roberts JC, Li T. Device degradation phenomena in GaN HFET technology: status mechanisms and opportunities. In: IEEE IEDM tech. digest; 2006. p. 1–4. – volume: 52 start-page: 1933 year: 2005 end-page: 1939 ident: bib30 article-title: Investigation of the impact of Al mole-fraction on the consequences of RF stress on Al publication-title: IEEE Trans Electron Dev – reference: Conway AM, Chen M, Hashimoto P, Willadsen PJ, Micovic M. Accelerated RF life testing of GaN HFETs. In: IRPS proceedings; 2007. p. 472–5. – reference: Jimenez JL, Chowdhury U. X-band GaN FET reliability. In: IEEE int. rel. phys. symp. proceedings; 2008. – reference: Joh J, del Alamo JA. Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors. In: IEEE IEDM tech. digest; 2008. p. 461–4. – reference: Jimenez JL, Chowdhury U, Kao MY, Balistreri T, Lee C, Saunier P, et al. Failure analysis of X-band GaN FETs. Presented at ROCS; 2006. – reference: Joshin K, Kikkawa T. High-power and high-efficiency GaN HEMT amplifiers. In: IEEE radio wireless sympos; 2008. p. 65–8. – volume: 48 start-page: 1929 year: 2001 end-page: 1937 ident: bib15 article-title: Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown publication-title: Electron Dev IEEE Trans – reference: Joh J, Xia L, del Alamo JA. Gate current degradation mechanisms of GaN high electron mobility transistors. In: IEEE IEDM tech. digest; 2007. p. 385–8. – volume: 29 start-page: 287 year: 2008 end-page: 289 ident: bib17 article-title: Critical voltage for electrical degradation of GaN high-electron mobility transistors publication-title: IEEE Electron Dev Lett – volume: 24 start-page: 421 year: 2003 end-page: 423 ident: bib8 article-title: Effects of SiN passivation and high-electric field on AlGaN–GaN HFET degradation publication-title: IEEE Electron Dev Lett – volume: 5 start-page: 555 year: 2005 end-page: 563 ident: bib9 article-title: Effects of RF and DC stress on AlGaN/GaN MODFETs: a low-frequency noise-based investigation publication-title: IEEE Trans Dev Mater Reliab – volume: 37 start-page: 1651 year: 1990 end-page: 1657 ident: bib12 article-title: Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFET’s publication-title: IEEE Trans Electron Dev – reference: Coffie R, Chen Y, Smorchkova IP, Heying B, Gambin V, Sutton W, et al. Temperature and voltage dependent RF degradation study in AlGaN/GaN HEMTs. In: IEEE IRPS proc.; 2007. p. 568–9. – reference: Mertens SD, del Alamo JA. Electrical degradation of InAlAs/InGaAs metamorphic high-electron mobility transistors. In: IEEE IEDM tech. digest; 2001 p. 193–6. – volume: 41 start-page: 155 year: 2005 end-page: 157 ident: bib29 article-title: Effects of AlGaN/GaN HEMT structure on RF reliability publication-title: Electron Lett – reference: Joh J, del Alamo JA. Mechanisms for electrical degradation of GaN high-electron mobility transistors. In: IEEE IEDM tech. digest; 2006. p. 415–8. – volume: 6 start-page: S1024 year: 2009 end-page: S1028 ident: bib32 article-title: GaN-on-Si HEMT stress under high electric field condition publication-title: Phys Status Solid C – volume: 69 start-page: 1411 year: 1996 end-page: 1413 ident: bib13 article-title: Evidence of interface trap creation by hot-electrons in AlGaAs/GaAs high electron mobility transistors publication-title: Appl Phys Lett – volume: 75 start-page: 4133 year: 1999 end-page: 4135 ident: bib18 article-title: Extensional piezoelectric coefficients of gallium nitride and aluminum nitride publication-title: Appl Phys Lett – volume: 29 start-page: 665 year: 2008 end-page: 667 ident: bib25 article-title: A simple current collapse measurement technique for GaN high-electron mobility transistors publication-title: IEEE Electron Dev Lett – reference: Sozza A, Dua C, Morvan E, diForte-Poisson MA, Delage S, Rampazzo F, et al. Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress. In: IEEE IEDM tech. digest; 2005. p. 590–3. – volume: 33 start-page: 408 year: 2004 end-page: 411 ident: bib20 article-title: Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide publication-title: J Electron Mater – reference: Saunier P, Lee C, Balistreri A, Dumka D, Jimenez J, Tserng HQ, et al. Progress in GaN performances and reliability. In: IEEE DRC conference digest; 2007. p. 35–6. – volume: 30 start-page: 427 year: 2009 end-page: 429 ident: bib24 article-title: Localized damage in AlGaN/GaN HEMTs induced by reverse-bias testing publication-title: IEEE Electron Dev Lett – reference: Joh J, del Alamo JA. Effects of temperature on electrical degradation of GaN high electron mobility transistors. In: ICNS proceedings; 2007. p. 39. – volume: 85 start-page: 6164 year: 2004 end-page: 6166 ident: bib19 article-title: In situ measurements of the critical thickness for strain relaxation in AlGaN/GaN heterostructures publication-title: Appl Phys Lett – volume: 8 start-page: 332 year: 2008 end-page: 343 ident: bib11 article-title: Reliabilitiy of GaN high-electron-mobility transistors: state of the art and perspectives publication-title: IEEE Trans Dev Mater Reliab – volume: 29 start-page: 1098 year: 2008 end-page: 1100 ident: bib28 article-title: TEM observation of crack- and pit-shaped defects in electrically degraded GaN HEMTs publication-title: IEEE Electron Dev Lett – volume: 98 start-page: 054501 year: 2005 end-page: 054505 ident: bib31 article-title: Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si[sub 3]N[sub 4] surface layer publication-title: J Appl Phys – reference: Matsushita K, Teramoto S, Sakurai H, Takada Y, Shim J, Kawasaki H et al. Reliability study of AlGaN/GaN HEMTs device. In: CS Mantech proceeding; 2007. p. 87–9. – volume: 45 start-page: 1883 year: 1998 end-page: 1889 ident: bib22 article-title: Off-state breakdown in power pHEMTs: the impact of the source publication-title: Electron Dev IEEE Trans – ident: 10.1016/j.microrel.2009.07.003_bib21 doi: 10.1109/IEDM.2007.4418953 – ident: 10.1016/j.microrel.2009.07.003_bib23 doi: 10.1109/IEDM.2007.4418953 – volume: 52 start-page: 1933 year: 2005 ident: 10.1016/j.microrel.2009.07.003_bib30 article-title: Investigation of the impact of Al mole-fraction on the consequences of RF stress on AlxGa1−xN/GaN MODFETs publication-title: IEEE Trans Electron Dev doi: 10.1109/TED.2005.852543 – volume: 69 start-page: 1411 year: 1996 ident: 10.1016/j.microrel.2009.07.003_bib13 article-title: Evidence of interface trap creation by hot-electrons in AlGaAs/GaAs high electron mobility transistors publication-title: Appl Phys Lett doi: 10.1063/1.117598 – volume: 85 start-page: 6164 year: 2004 ident: 10.1016/j.microrel.2009.07.003_bib19 article-title: In situ measurements of the critical thickness for strain relaxation in AlGaN/GaN heterostructures publication-title: Appl Phys Lett doi: 10.1063/1.1840111 – ident: 10.1016/j.microrel.2009.07.003_bib6 doi: 10.1109/RELPHY.2007.369954 – volume: 29 start-page: 287 year: 2008 ident: 10.1016/j.microrel.2009.07.003_bib17 article-title: Critical voltage for electrical degradation of GaN high-electron mobility transistors publication-title: IEEE Electron Dev Lett doi: 10.1109/LED.2008.917815 – ident: 10.1016/j.microrel.2009.07.003_bib4 doi: 10.1109/RELPHY.2007.369936 – volume: 98 start-page: 054501 year: 2005 ident: 10.1016/j.microrel.2009.07.003_bib31 article-title: Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si[sub 3]N[sub 4] surface layer publication-title: J Appl Phys doi: 10.1063/1.2008388 – volume: 45 start-page: 1883 year: 1998 ident: 10.1016/j.microrel.2009.07.003_bib22 article-title: Off-state breakdown in power pHEMTs: the impact of the source publication-title: Electron Dev IEEE Trans doi: 10.1109/16.711351 – volume: 33 start-page: 408 year: 2004 ident: 10.1016/j.microrel.2009.07.003_bib20 article-title: Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide publication-title: J Electron Mater doi: 10.1007/s11664-004-0192-9 – ident: 10.1016/j.microrel.2009.07.003_bib7 – ident: 10.1016/j.microrel.2009.07.003_bib5 – volume: 48 start-page: 1929 year: 2001 ident: 10.1016/j.microrel.2009.07.003_bib15 article-title: Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown publication-title: Electron Dev IEEE Trans doi: 10.1109/16.944179 – ident: 10.1016/j.microrel.2009.07.003_bib26 doi: 10.1109/IEDM.2007.4418953 – ident: 10.1016/j.microrel.2009.07.003_bib14 – volume: 37 start-page: 1651 year: 1990 ident: 10.1016/j.microrel.2009.07.003_bib12 article-title: Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFET’s publication-title: IEEE Trans Electron Dev doi: 10.1109/16.55752 – volume: 75 start-page: 4133 year: 1999 ident: 10.1016/j.microrel.2009.07.003_bib18 article-title: Extensional piezoelectric coefficients of gallium nitride and aluminum nitride publication-title: Appl Phys Lett doi: 10.1063/1.125560 – volume: 41 start-page: 155 year: 2005 ident: 10.1016/j.microrel.2009.07.003_bib29 article-title: Effects of AlGaN/GaN HEMT structure on RF reliability publication-title: Electron Lett doi: 10.1049/el:20057802 – volume: 8 start-page: 332 year: 2008 ident: 10.1016/j.microrel.2009.07.003_bib11 article-title: Reliabilitiy of GaN high-electron-mobility transistors: state of the art and perspectives publication-title: IEEE Trans Dev Mater Reliab doi: 10.1109/TDMR.2008.923743 – volume: 6 start-page: S1024 year: 2009 ident: 10.1016/j.microrel.2009.07.003_bib32 article-title: GaN-on-Si HEMT stress under high electric field condition publication-title: Phys Status Solid C doi: 10.1002/pssc.200880885 – volume: 30 start-page: 427 year: 2009 ident: 10.1016/j.microrel.2009.07.003_bib24 article-title: Localized damage in AlGaN/GaN HEMTs induced by reverse-bias testing publication-title: IEEE Electron Dev Lett doi: 10.1109/LED.2009.2016440 – ident: 10.1016/j.microrel.2009.07.003_bib2 doi: 10.1109/IEDM.2006.346798 – ident: 10.1016/j.microrel.2009.07.003_bib10 – volume: 24 start-page: 421 year: 2003 ident: 10.1016/j.microrel.2009.07.003_bib8 article-title: Effects of SiN passivation and high-electric field on AlGaN–GaN HFET degradation publication-title: IEEE Electron Dev Lett doi: 10.1109/LED.2003.813375 – ident: 10.1016/j.microrel.2009.07.003_bib16 doi: 10.1109/IEDM.2006.346799 – volume: 29 start-page: 665 year: 2008 ident: 10.1016/j.microrel.2009.07.003_bib25 article-title: A simple current collapse measurement technique for GaN high-electron mobility transistors publication-title: IEEE Electron Dev Lett doi: 10.1109/LED.2008.2000919 – volume: 29 start-page: 1098 year: 2008 ident: 10.1016/j.microrel.2009.07.003_bib28 article-title: TEM observation of crack- and pit-shaped defects in electrically degraded GaN HEMTs publication-title: IEEE Electron Dev Lett doi: 10.1109/LED.2008.2003073 – ident: 10.1016/j.microrel.2009.07.003_bib3 doi: 10.1109/DRC.2007.4373639 – ident: 10.1016/j.microrel.2009.07.003_bib27 – ident: 10.1016/j.microrel.2009.07.003_bib1 doi: 10.1109/RELPHY.2008.4558923 – volume: 5 start-page: 555 year: 2005 ident: 10.1016/j.microrel.2009.07.003_bib9 article-title: Effects of RF and DC stress on AlGaN/GaN MODFETs: a low-frequency noise-based investigation publication-title: IEEE Trans Dev Mater Reliab doi: 10.1109/TDMR.2005.853515 |
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| SubjectTerms | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| Title | GaN HEMT reliability |
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