Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates
•Hall methodology for antimonides, grown on conducting GaSb substrates.•Comparison of the GaSb Hall layer morphologies, grown on GaSb versus GaAs.•Comparison of Hall properties of p- and n-GaSb, grown on GaSb versus GaAs.•Successful Hall measurements of p-AlGaAsSb layers grown on GaSb. The Hall Van-...
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| Veröffentlicht in: | Journal of crystal growth Jg. 496-497; S. 36 - 42 |
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Elsevier B.V
01.08.2018
Elsevier BV |
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| ISSN: | 0022-0248, 1873-5002 |
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| Abstract | •Hall methodology for antimonides, grown on conducting GaSb substrates.•Comparison of the GaSb Hall layer morphologies, grown on GaSb versus GaAs.•Comparison of Hall properties of p- and n-GaSb, grown on GaSb versus GaAs.•Successful Hall measurements of p-AlGaAsSb layers grown on GaSb.
The Hall Van-der-Pauw method is widely used to assess the electrical properties of GaSb based semiconductor layers. Semi-insulating GaSb substrates are not available, and therefore, Hall structures are generally grown on semi-insulating GaAs. The lattice mismatch of 7.8% between GaAs and GaSb results in high defect densities, which may influence the measurement. We investigated an alternative approach for Hall effect measurements using a p-n junction for the electrical isolation of the test layer from layers below. This allows antimonide based test layers with low defect density grown lattice-matched on GaSb substrates to be analyzed. Negligible leakage currents across the p-n junctions are key to ensure significant measurement results. n- and p-GaSb layers show similar carrier concentration if grown on GaSb or semi-insulating GaAs, with the exception of highly n-doped layers >5x1017cm−3. However, majority carrier mobilities were systematically higher on GaSb substrate, explained by a lower density of structural defects. Furthermore, the sample design with p-n junction enabled Hall effect measurements of quaternary p-Al0.2Ga0.8As0.02Sb0.98 layers, which was impossible for those same layers grown on GaAs due to strain induced phase-separation. The methodology is presented for antimonides, but it is applicable to a wide range of material systems including metamorphic structures. |
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| AbstractList | •Hall methodology for antimonides, grown on conducting GaSb substrates.•Comparison of the GaSb Hall layer morphologies, grown on GaSb versus GaAs.•Comparison of Hall properties of p- and n-GaSb, grown on GaSb versus GaAs.•Successful Hall measurements of p-AlGaAsSb layers grown on GaSb.
The Hall Van-der-Pauw method is widely used to assess the electrical properties of GaSb based semiconductor layers. Semi-insulating GaSb substrates are not available, and therefore, Hall structures are generally grown on semi-insulating GaAs. The lattice mismatch of 7.8% between GaAs and GaSb results in high defect densities, which may influence the measurement. We investigated an alternative approach for Hall effect measurements using a p-n junction for the electrical isolation of the test layer from layers below. This allows antimonide based test layers with low defect density grown lattice-matched on GaSb substrates to be analyzed. Negligible leakage currents across the p-n junctions are key to ensure significant measurement results. n- and p-GaSb layers show similar carrier concentration if grown on GaSb or semi-insulating GaAs, with the exception of highly n-doped layers >5x1017cm−3. However, majority carrier mobilities were systematically higher on GaSb substrate, explained by a lower density of structural defects. Furthermore, the sample design with p-n junction enabled Hall effect measurements of quaternary p-Al0.2Ga0.8As0.02Sb0.98 layers, which was impossible for those same layers grown on GaAs due to strain induced phase-separation. The methodology is presented for antimonides, but it is applicable to a wide range of material systems including metamorphic structures. The Hall Van-der-Pauw method is widely used to assess the electrical properties of GaSb based semiconductor layers. Semi-insulating GaSb substrates are not available, and therefore, Hall structures are generally grown on semi-insulating GaAs. The lattice mismatch of 7.8% between GaAs and GaSb results in high defect densities, which may influence the measurement. We investigated an alternative approach for Hall effect measurements using a p-n junction for the electrical isolation of the test layer from layers below. This allows antimonide based test layers with low defect density grown lattice-matched on GaSb substrates to be analyzed. Negligible leakage currents across the p-n junctions are key to ensure significant measurement results. n- and p-GaSb layers show similar carrier concentration if grown on GaSb or semi-insulating GaAs, with the exception of highly n-doped layers >5 x 1017 cm−3. However, majority carrier mobilities were systematically higher on GaSb substrate, explained by a lower density of structural defects. Furthermore, the sample design with p-n junction enabled Hall effect measurements of quaternary p-Al0.2Ga0.8As0.02Sb0.98 layers, which was impossible for those same layers grown on GaAs due to strain induced phase-separation. The methodology is presented for antimonides, but it is applicable to a wide range of material systems including metamorphic structures. |
| Author | Predan, F. Mrabet, S. Dimroth, F. Ohlmann, J. Lackner, D. |
| Author_xml | – sequence: 1 givenname: F. surname: Predan fullname: Predan, F. email: felix.predan@ise.fraunhofer.de – sequence: 2 givenname: J. surname: Ohlmann fullname: Ohlmann, J. – sequence: 3 givenname: S. surname: Mrabet fullname: Mrabet, S. – sequence: 4 givenname: F. surname: Dimroth fullname: Dimroth, F. – sequence: 5 givenname: D. surname: Lackner fullname: Lackner, D. |
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| CitedBy_id | crossref_primary_10_1109_JPHOTOV_2019_2957663 crossref_primary_10_3390_ma14174944 crossref_primary_10_1109_JPHOTOV_2022_3164690 crossref_primary_10_3390_nano14070592 |
| Cites_doi | 10.1016/j.apsusc.2015.07.048 10.1016/S0921-5107(98)00540-6 10.1016/j.solmat.2005.02.002 10.1016/S0022-0248(00)00739-9 10.1016/S0022-0248(98)00710-6 10.1116/1.586767 10.1016/S0022-0248(98)00597-1 10.1016/S0927-796X(02)00002-5 10.1049/el:19950525 10.1007/s11664-998-0178-0 10.1016/S0960-8974(98)00004-7 10.1063/1.1368156 10.1016/S0022-0248(97)00117-6 10.1063/1.1760218 10.1016/S0022-0248(96)00445-9 10.1116/1.4947118 10.1007/s11664-997-0025-8 10.1557/PROC-423-661 10.1063/1.53289 10.1016/j.jcrysgro.2004.09.019 10.1049/el:20071305 10.1166/jnn.2011.4111 10.1016/S0022-0248(96)00579-9 10.1016/0022-0248(91)90789-8 10.1109/T-ED.1980.19815 10.1016/S0022-0248(98)00670-8 10.1088/0268-1242/12/4/013 10.1063/1.365356 |
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| Keywords | A1 Majority carrier properties A3 Metalorganicvapor phase epitaxy A1 Hall measurements B1 Gallium compounds A1 Doping B1 Antimonides |
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| References | Biefeld (b0065) 2002; 36 Schöner, Rottner, Nordell (b0115) 1996 Larrabee, Thurber (b0110) 1980; 27 Huang, Balakrishnan, Huffaker (b0130) 2011; 11 Agert (b0140) 2001 Nakamura, Taira, Funato, Kawai (b0150) 1991; 115 Boos, Bennett, Papanicolaou, Ancona, Champlain, Bass, Shanabrook (b0040) 2007; 43 Aardvark, Mason, Walker (b0060) 1997; 35 Giesen, Beerbom, Xu, Heime (b0085) 1998; 195 Koljonen, Sopanen, Lipsanen, Tuomi (b0090) 1996; 169 Wang (b0095) 1997; 170 Madelung (b0155) 1991 Shin, Hsu, Hsu, Stringfellow (b0100) 1997; 179 Ehsani, Bhat, Hitchcock, Gutmann, Charache, Freeman (b0105) 1998; 195 Salesse, Alabedra, Chen, Lakrimi, Nicholas, Mason, Walker (b0145) 1997 Wang (b0070) 2004; 272 Predan, Reinwald, Klinger, Dimroth (b0045) 2015; 353 Van der Pauw (b0075) 1958; 13 Predan, Reinwand, Cariou, Niemeyer, Dimroth (b0050) 2016; 34 Wang, Choi (b0030) 1997; 26 Giesen, Szymakowski, Rushworth, Heuken, Heime (b0080) 2000; 221 Vurgaftman, Meyer, Ram-Mohan (b0055) 2001; 89 Schöner, Karlsson, Schmitt, Nordell, Linarsson, Rottner (b0120) 1999; 61–62 Zhang, Zhou, Jiang, Ning, Jin (b0010) 1995; 31 Turner, Eglash, Strauss (b0160) 1993 Schroder (b0125) 2006 Wang, Choi, Oakley, Charache (b0015) 1998; 195 Lin, Grau, Dier, Amann (b0025) 2004; 84 Dutta, Bhat, Kumar (b0005) 1997; 81 Kim, Seong, Mason, Walker (b0135) 1998; 27 C.A. Wang, H.K. Choi, G.W. Turner, D.L. Spears, M.J. Manfra, G.W. Charache, Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices, in: 3rd NREL Conference on Thermophotovoltaic Generation of Electricity, AIP Conference Proceedings, Colorado Springs, Colorado, USA, 1997, pp. 75–87. Qiu, Hayden, Mauk, Sulima (b0020) 2006; 90 Dutta (10.1016/j.jcrysgro.2018.05.023_b0005) 1997; 81 Larrabee (10.1016/j.jcrysgro.2018.05.023_b0110) 1980; 27 Wang (10.1016/j.jcrysgro.2018.05.023_b0070) 2004; 272 Ehsani (10.1016/j.jcrysgro.2018.05.023_b0105) 1998; 195 Wang (10.1016/j.jcrysgro.2018.05.023_b0015) 1998; 195 Giesen (10.1016/j.jcrysgro.2018.05.023_b0085) 1998; 195 Schöner (10.1016/j.jcrysgro.2018.05.023_b0115) 1996 Aardvark (10.1016/j.jcrysgro.2018.05.023_b0060) 1997; 35 Wang (10.1016/j.jcrysgro.2018.05.023_b0030) 1997; 26 Biefeld (10.1016/j.jcrysgro.2018.05.023_b0065) 2002; 36 Wang (10.1016/j.jcrysgro.2018.05.023_b0095) 1997; 170 Giesen (10.1016/j.jcrysgro.2018.05.023_b0080) 2000; 221 Salesse (10.1016/j.jcrysgro.2018.05.023_b0145) 1997 Qiu (10.1016/j.jcrysgro.2018.05.023_b0020) 2006; 90 Van der Pauw (10.1016/j.jcrysgro.2018.05.023_b0075) 1958; 13 Predan (10.1016/j.jcrysgro.2018.05.023_b0050) 2016; 34 Kim (10.1016/j.jcrysgro.2018.05.023_b0135) 1998; 27 Nakamura (10.1016/j.jcrysgro.2018.05.023_b0150) 1991; 115 Zhang (10.1016/j.jcrysgro.2018.05.023_b0010) 1995; 31 Agert (10.1016/j.jcrysgro.2018.05.023_b0140) 2001 Madelung (10.1016/j.jcrysgro.2018.05.023_b0155) 1991 10.1016/j.jcrysgro.2018.05.023_b0035 Schöner (10.1016/j.jcrysgro.2018.05.023_b0120) 1999; 61–62 Huang (10.1016/j.jcrysgro.2018.05.023_b0130) 2011; 11 Predan (10.1016/j.jcrysgro.2018.05.023_b0045) 2015; 353 Shin (10.1016/j.jcrysgro.2018.05.023_b0100) 1997; 179 Vurgaftman (10.1016/j.jcrysgro.2018.05.023_b0055) 2001; 89 Turner (10.1016/j.jcrysgro.2018.05.023_b0160) 1993 Boos (10.1016/j.jcrysgro.2018.05.023_b0040) 2007; 43 Schroder (10.1016/j.jcrysgro.2018.05.023_b0125) 2006 Lin (10.1016/j.jcrysgro.2018.05.023_b0025) 2004; 84 Koljonen (10.1016/j.jcrysgro.2018.05.023_b0090) 1996; 169 |
| References_xml | – start-page: 413 year: 1997 end-page: 418 ident: b0145 article-title: Improved photoluminescence from electrochemically passivated GaSb publication-title: Semicond. Sci. Technol. – volume: 26 start-page: 1231 year: 1997 end-page: 1236 ident: b0030 article-title: OMVPE growth of GaInAsSb/AlGaAsSb for quantum-well diode lasers publication-title: J. Electron. Mater. – volume: 81 start-page: 5821 year: 1997 end-page: 5870 ident: b0005 article-title: The physics and technology of gallium antimode: An emerging optoelectronic material publication-title: J. Appl. Phys. – start-page: 864 year: 1993 end-page: 867 ident: b0160 article-title: Molecular-beam epitaxial growth of high-mobility n-GaSb publication-title: J. Vac. Sci. Technol., B – volume: 353 start-page: 1203 year: 2015 end-page: 1207 ident: b0045 article-title: Transparent and electrically conductive GaSb/Si direct wafer bondingat low temperatures by argon-beam surface activation publication-title: Appl. Surf. Sci. – volume: 35 start-page: 207 year: 1997 end-page: 241 ident: b0060 article-title: The growth of antimonides by MOVPE publication-title: Prog. Cryst. Growth Charact. Mater. – volume: 43 start-page: 834 year: 2007 end-page: 835 ident: b0040 article-title: High mobility p-channel HFETs using strained Sb-based materials publication-title: Electron. Lett. – volume: 272 start-page: 664 year: 2004 end-page: 681 ident: b0070 article-title: Progress and continuing challenges in GaSb-based III-V alloys and heterostructures grown by organometallic vapor-phase epitaxy publication-title: J. Cryst. Growth – volume: 34 start-page: 031103 year: 2016 ident: b0050 article-title: Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation publication-title: J. Vac. Sci. Technol., A – volume: 115 start-page: 474 year: 1991 end-page: 478 ident: b0150 article-title: Se and Te doping in LP-MOCVD-grown GaSb using H publication-title: J. Cryst. Growth – volume: 221 start-page: 450 year: 2000 end-page: 455 ident: b0080 article-title: MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor publication-title: J. Cryst. Growth – volume: 90 start-page: 68 year: 2006 end-page: 81 ident: b0020 article-title: Generation of electricity using InGaAsSb and GaSb TPV cells in combustion-driven radiant sources publication-title: Sol. Energy Mater. Sol. Cells – volume: 89 start-page: 5815 year: 2001 end-page: 5875 ident: b0055 article-title: Band parameters for III-V compound semiconductors and their alloys publication-title: J. Appl. Phys. – start-page: 661 year: 1996 end-page: 666 ident: b0115 article-title: Theory and realization of a two-layer hall effect measurement concept for characterization of epitaxial and implanted layers of SiC publication-title: Mater. Res. Soc. Symp. Proc. – year: 2006 ident: b0125 article-title: Semiconductor Material and Device Characterization – reference: C.A. Wang, H.K. Choi, G.W. Turner, D.L. Spears, M.J. Manfra, G.W. Charache, Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices, in: 3rd NREL Conference on Thermophotovoltaic Generation of Electricity, AIP Conference Proceedings, Colorado Springs, Colorado, USA, 1997, pp. 75–87. – volume: 169 start-page: 417 year: 1996 end-page: 423 ident: b0090 article-title: Metalorganic vapor phase epitaxial growth of AlGaSb and AlGaAsSb using all-organometallic sources publication-title: J. Cryst. Growth – volume: 13 start-page: 1 year: 1958 end-page: 9 ident: b0075 article-title: A method of measuring specific resistivity and Hall effect of discs of arbitrary shape publication-title: Philips Res. Reports – year: 1991 ident: b0155 article-title: Semiconductors: Group IV Elements and III-V Compounds – volume: 11 year: 2011 ident: b0130 article-title: Growth mode and defect evaluation of GaSb on GaAs substrate: a transmission electron microscopy study publication-title: J. Nanosci. Nanotechnol. – volume: 195 start-page: 85 year: 1998 end-page: 90 ident: b0085 article-title: MOVPE of AlAsSb using tritertiarybutylaluminum publication-title: J. Cryst. Growth – volume: 31 start-page: 830 year: 1995 end-page: 832 ident: b0010 article-title: GaInAsSb/GaSb infrared photodetectors prepared by MOCVD publication-title: Electron. Lett. – volume: 195 start-page: 385 year: 1998 end-page: 390 ident: b0105 article-title: p-Type and n-type doping in GaSb and Ga publication-title: J. Cryst. Growth – volume: 36 start-page: 105 year: 2002 end-page: 142 ident: b0065 article-title: The metal-organic chemical vapor deposition and properties of III-V antimony-based semiconductor materials publication-title: Mater. Sci. Eng., R – volume: 170 start-page: 725 year: 1997 end-page: 731 ident: b0095 article-title: Organometallic vapor phase epitaxial growth of AlSb-based alloys publication-title: J. Cryst. Growth – volume: 61–62 start-page: 389 year: 1999 end-page: 394 ident: b0120 article-title: Hall effect investigations of 4H–SiC epitaxial layers grown on semi-insulating and conducting substrates publication-title: Mater. Sci. Eng., B – volume: 27 start-page: 466 year: 1998 end-page: 471 ident: b0135 article-title: Morphology and defect structures of GaSb Islands on GaAs grown by metalorganic vapor phase epitaxy publication-title: J. Electron. Mater. – volume: 27 start-page: 32 year: 1980 end-page: 36 ident: b0110 article-title: Theory and application of a two-layer hall technique publication-title: IEEE Trans. Electron Devices – start-page: 145 year: 2001 ident: b0140 article-title: MOVPE of GaSb-based materials and solar cell structures publication-title: Fakultät für Physik – volume: 179 start-page: 1 year: 1997 end-page: 9 ident: b0100 article-title: OMVPE growth of metastable GaAsSb and GalnAsSb alloys using TBAs and TBDMSb publication-title: J. Cryst. Growth – volume: 195 start-page: 346 year: 1998 end-page: 355 ident: b0015 article-title: Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor-phase epitaxy publication-title: J. Cryst. Growth – volume: 84 start-page: 5088 year: 2004 end-page: 5090 ident: b0025 article-title: Low threshold room-temperature continuous-wave operation of 2.24–3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers publication-title: Appl. Phys. Lett. – volume: 353 start-page: 1203 year: 2015 ident: 10.1016/j.jcrysgro.2018.05.023_b0045 article-title: Transparent and electrically conductive GaSb/Si direct wafer bondingat low temperatures by argon-beam surface activation publication-title: Appl. Surf. Sci. doi: 10.1016/j.apsusc.2015.07.048 – volume: 61–62 start-page: 389 year: 1999 ident: 10.1016/j.jcrysgro.2018.05.023_b0120 article-title: Hall effect investigations of 4H–SiC epitaxial layers grown on semi-insulating and conducting substrates publication-title: Mater. Sci. Eng., B doi: 10.1016/S0921-5107(98)00540-6 – year: 1991 ident: 10.1016/j.jcrysgro.2018.05.023_b0155 – volume: 90 start-page: 68 year: 2006 ident: 10.1016/j.jcrysgro.2018.05.023_b0020 article-title: Generation of electricity using InGaAsSb and GaSb TPV cells in combustion-driven radiant sources publication-title: Sol. Energy Mater. Sol. Cells doi: 10.1016/j.solmat.2005.02.002 – year: 2006 ident: 10.1016/j.jcrysgro.2018.05.023_b0125 – volume: 221 start-page: 450 year: 2000 ident: 10.1016/j.jcrysgro.2018.05.023_b0080 article-title: MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(00)00739-9 – volume: 195 start-page: 385 year: 1998 ident: 10.1016/j.jcrysgro.2018.05.023_b0105 article-title: p-Type and n-type doping in GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(98)00710-6 – start-page: 864 year: 1993 ident: 10.1016/j.jcrysgro.2018.05.023_b0160 article-title: Molecular-beam epitaxial growth of high-mobility n-GaSb publication-title: J. Vac. Sci. Technol., B doi: 10.1116/1.586767 – volume: 195 start-page: 346 year: 1998 ident: 10.1016/j.jcrysgro.2018.05.023_b0015 article-title: Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor-phase epitaxy publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(98)00597-1 – volume: 36 start-page: 105 year: 2002 ident: 10.1016/j.jcrysgro.2018.05.023_b0065 article-title: The metal-organic chemical vapor deposition and properties of III-V antimony-based semiconductor materials publication-title: Mater. Sci. Eng., R doi: 10.1016/S0927-796X(02)00002-5 – volume: 31 start-page: 830 year: 1995 ident: 10.1016/j.jcrysgro.2018.05.023_b0010 article-title: GaInAsSb/GaSb infrared photodetectors prepared by MOCVD publication-title: Electron. Lett. doi: 10.1049/el:19950525 – volume: 27 start-page: 466 year: 1998 ident: 10.1016/j.jcrysgro.2018.05.023_b0135 article-title: Morphology and defect structures of GaSb Islands on GaAs grown by metalorganic vapor phase epitaxy publication-title: J. Electron. Mater. doi: 10.1007/s11664-998-0178-0 – volume: 35 start-page: 207 year: 1997 ident: 10.1016/j.jcrysgro.2018.05.023_b0060 article-title: The growth of antimonides by MOVPE publication-title: Prog. Cryst. Growth Charact. Mater. doi: 10.1016/S0960-8974(98)00004-7 – start-page: 145 year: 2001 ident: 10.1016/j.jcrysgro.2018.05.023_b0140 article-title: MOVPE of GaSb-based materials and solar cell structures – volume: 89 start-page: 5815 year: 2001 ident: 10.1016/j.jcrysgro.2018.05.023_b0055 article-title: Band parameters for III-V compound semiconductors and their alloys publication-title: J. Appl. Phys. doi: 10.1063/1.1368156 – volume: 179 start-page: 1 year: 1997 ident: 10.1016/j.jcrysgro.2018.05.023_b0100 article-title: OMVPE growth of metastable GaAsSb and GalnAsSb alloys using TBAs and TBDMSb publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(97)00117-6 – volume: 84 start-page: 5088 year: 2004 ident: 10.1016/j.jcrysgro.2018.05.023_b0025 article-title: Low threshold room-temperature continuous-wave operation of 2.24–3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers publication-title: Appl. Phys. Lett. doi: 10.1063/1.1760218 – volume: 169 start-page: 417 year: 1996 ident: 10.1016/j.jcrysgro.2018.05.023_b0090 article-title: Metalorganic vapor phase epitaxial growth of AlGaSb and AlGaAsSb using all-organometallic sources publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(96)00445-9 – volume: 34 start-page: 031103 year: 2016 ident: 10.1016/j.jcrysgro.2018.05.023_b0050 article-title: Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation publication-title: J. Vac. Sci. Technol., A doi: 10.1116/1.4947118 – volume: 26 start-page: 1231 year: 1997 ident: 10.1016/j.jcrysgro.2018.05.023_b0030 article-title: OMVPE growth of GaInAsSb/AlGaAsSb for quantum-well diode lasers publication-title: J. Electron. Mater. doi: 10.1007/s11664-997-0025-8 – start-page: 661 year: 1996 ident: 10.1016/j.jcrysgro.2018.05.023_b0115 article-title: Theory and realization of a two-layer hall effect measurement concept for characterization of epitaxial and implanted layers of SiC publication-title: Mater. Res. Soc. Symp. Proc. doi: 10.1557/PROC-423-661 – ident: 10.1016/j.jcrysgro.2018.05.023_b0035 doi: 10.1063/1.53289 – volume: 272 start-page: 664 year: 2004 ident: 10.1016/j.jcrysgro.2018.05.023_b0070 article-title: Progress and continuing challenges in GaSb-based III-V alloys and heterostructures grown by organometallic vapor-phase epitaxy publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2004.09.019 – volume: 13 start-page: 1 year: 1958 ident: 10.1016/j.jcrysgro.2018.05.023_b0075 article-title: A method of measuring specific resistivity and Hall effect of discs of arbitrary shape publication-title: Philips Res. Reports – volume: 43 start-page: 834 year: 2007 ident: 10.1016/j.jcrysgro.2018.05.023_b0040 article-title: High mobility p-channel HFETs using strained Sb-based materials publication-title: Electron. Lett. doi: 10.1049/el:20071305 – volume: 11 year: 2011 ident: 10.1016/j.jcrysgro.2018.05.023_b0130 article-title: Growth mode and defect evaluation of GaSb on GaAs substrate: a transmission electron microscopy study publication-title: J. Nanosci. Nanotechnol. doi: 10.1166/jnn.2011.4111 – volume: 170 start-page: 725 year: 1997 ident: 10.1016/j.jcrysgro.2018.05.023_b0095 article-title: Organometallic vapor phase epitaxial growth of AlSb-based alloys publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(96)00579-9 – volume: 115 start-page: 474 year: 1991 ident: 10.1016/j.jcrysgro.2018.05.023_b0150 article-title: Se and Te doping in LP-MOCVD-grown GaSb using H2Se and DETe publication-title: J. Cryst. Growth doi: 10.1016/0022-0248(91)90789-8 – volume: 27 start-page: 32 year: 1980 ident: 10.1016/j.jcrysgro.2018.05.023_b0110 article-title: Theory and application of a two-layer hall technique publication-title: IEEE Trans. Electron Devices doi: 10.1109/T-ED.1980.19815 – volume: 195 start-page: 85 year: 1998 ident: 10.1016/j.jcrysgro.2018.05.023_b0085 article-title: MOVPE of AlAsSb using tritertiarybutylaluminum publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(98)00670-8 – start-page: 413 year: 1997 ident: 10.1016/j.jcrysgro.2018.05.023_b0145 article-title: Improved photoluminescence from electrochemically passivated GaSb publication-title: Semicond. Sci. Technol. doi: 10.1088/0268-1242/12/4/013 – volume: 81 start-page: 5821 year: 1997 ident: 10.1016/j.jcrysgro.2018.05.023_b0005 article-title: The physics and technology of gallium antimode: An emerging optoelectronic material publication-title: J. Appl. Phys. doi: 10.1063/1.365356 |
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| Snippet | •Hall methodology for antimonides, grown on conducting GaSb substrates.•Comparison of the GaSb Hall layer morphologies, grown on GaSb versus GaAs.•Comparison... The Hall Van-der-Pauw method is widely used to assess the electrical properties of GaSb based semiconductor layers. Semi-insulating GaSb substrates are not... |
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| SubjectTerms | A1 Doping A1 Hall measurements A1 Majority carrier properties A3 Metalorganicvapor phase epitaxy Antimonides B1 Antimonides B1 Gallium compounds Carrier density Design defects Electrical junctions Electrical properties Gallium antimonide Gallium antimonides Gallium arsenide Hall effect Lattice matching Majority carriers P-n junctions Semiconductor doping Semiconductors Substrates |
| Title | Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates |
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