Citáce podľa APA (7th ed.)

Predan, F., Ohlmann, J., Mrabet, S., Dimroth, F., & Lackner, D. (2018). Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates. Journal of crystal growth, 496-497, 36-42. https://doi.org/10.1016/j.jcrysgro.2018.05.023

Citácia podle Chicago (17th ed.)

Predan, F., J. Ohlmann, S. Mrabet, F. Dimroth, a D. Lackner. "Hall Characterization of Epitaxial GaSb and AlGaAsSb Layers Using P-n Junctions on GaSb Substrates." Journal of Crystal Growth 496-497 (2018): 36-42. https://doi.org/10.1016/j.jcrysgro.2018.05.023.

Citácia podľa MLA (8th ed.)

Predan, F., et al. "Hall Characterization of Epitaxial GaSb and AlGaAsSb Layers Using P-n Junctions on GaSb Substrates." Journal of Crystal Growth, vol. 496-497, 2018, pp. 36-42, https://doi.org/10.1016/j.jcrysgro.2018.05.023.

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