Automated Flexible Modeling for Various Full-SiC Power Modules

Various types of SiC power module product have been developed in recent years. Therefore, the device model developing speed and the flexibility corresponding to each product are further required. In this article, a novel high-accuracy data-driven modeling method was developed using 1.2-, 3.3-, and 6...

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Vydáno v:	IEEE transactions on power electronics Ročník 38; číslo 5; s. 6094 - 6107
Hlavní autoři:	Nakashima, Junichi, Horiguchi, Takeshi, Mukunoki, Yasushige, Hagiwara, Makoto, Urakabe, Takahiro, Harada, Shigeki
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	New York IEEE 01.05.2023 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Témata:	Algorithms Automation Data models Diodes Dynamic characteristics Error reduction gallium nitride Genetic algorithms HEMTs Heuristic algorithms Linear programming Mathematical models Model accuracy Modelling Modules MOSFET Optimization optimization methods Parameters Semiconductor device modeling silicon carbide Simulated annealing simulation program with integrated circuit emphasis (SPICE) Static models Waveforms
ISSN:	0885-8993, 1941-0107
On-line přístup:	Získat plný text
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