Enhancing neutron radiation resistance of silicon-based semiconductor devices through isotope separation and enrichment

Different isotopes may exhibit different resistance against the displacement damage induced by neutron radiations. To examine the difference in silicon isotopes, we calculate the damage functions of 28 Si, 29 Si, 30 Si and the natural silicon under intermediate neutron (10 −6 -0.1 MeV) and fast neut...

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Bibliographic Details
Published in:Radiation effects and defects in solids Vol. 176; no. 5-6; pp. 419 - 430
Main Authors: Bai, Ying, Cai, Zeng-Hua, Wu, Yu-Ning, Chen, Shiyou
Format: Journal Article
Language:English
Published: Abingdon Taylor & Francis 03.06.2021
Taylor & Francis Ltd
Subjects:
cross section
damage function
Displacement
displacement damage
Emergency preparedness
Emergency response
Fast neutrons
Isotope separation
Isotopes
Mathematical analysis
Neutron radiation
Nuclear accidents
Nuclear accidents & safety
Nuclear reactions
Radiation
Radiation damage
Radiation tolerance
Semiconductor devices
Service life
Silicon
Silicon isotopes
ISSN:1042-0150, 1029-4953
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Summary:Different isotopes may exhibit different resistance against the displacement damage induced by neutron radiations. To examine the difference in silicon isotopes, we calculate the damage functions of 28 Si, 29 Si, 30 Si and the natural silicon under intermediate neutron (10 −6 -0.1 MeV) and fast neutron (>0.1 MeV) radiations based on radiation damage theory and the Neutron Nuclear Reaction Evaluation Database (ENDF/B-VIII.0). Their accumulative displacement per atom (DPA) values under the neutron radiation of nuclear accident emergency response or cosmic space are also investigated. The calculated radiation damage functions and DPAs indicate that 30 Si endures at least 10-15% less displacement damage compared with 28 Si, 29 Si and the natural silicon under intermediate and fast neutron radiations. Therefore, we propose to use 30 Si-enriched silicon in semiconductor devices to enhance the neutron radiation resistance and extend the service life in radiative circumstances.
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ISSN:1042-0150
1029-4953
DOI:10.1080/10420150.2020.1855178