Synthesis and characterization of 2D transition metal dichalcogenides: Recent progress from a vacuum surface science perspective

Layered transition metal dichalcogenides (TMDs) are a diverse group of materials whose properties vary from semiconducting to metallic with a variety of many body phenomena, ranging from charge density wave (CDW), superconductivity, to Mott-insulators. Recent interest in topologically protected stat...

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Vydané v:Surface science reports Ročník 76; číslo 2; s. 100523
Hlavní autori: Lasek, Kinga, Li, Jingfeng, Kolekar, Sadhu, Coelho, Paula Mariel, Guo, Lu'an, Zhang, Min, Wang, Zhiming, Batzill, Matthias
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: Amsterdam Elsevier B.V 01.05.2021
Elsevier Science Ltd
Predmet:
Angle resolved photoemission spectroscopy
Chalcogenides
Charge density waves
Chemical vapor deposition
Defects
Dopants
Excitons
Grain boundaries
Heterostructures
Mirror grain boundaries
Moiré structures
Molecular adsorption
Molecular beam epitaxy
Monolayer
Monolayers
Multilayers
Nanostructure
Phase control
Phases
Photoelectric emission
Scanning tunneling microscopy
Self-intercalation
Superconductivity
Topological insulators
Topologically protected states
Transition metal compounds
Transition metal dichalcogenides
Two dimensional materials
van der Waals epitaxy
Monolayer
Mirror grain boundaries
Moiré structures
Molecular adsorption
Angle resolved photoemission spectroscopy
Transition metal dichalcogenides
Defects
Scanning tunneling microscopy
Self-intercalation
Topologically protected states
van der Waals epitaxy
Charge density waves
Dopants
Heterostructures
ISSN:0167-5729, 1879-274X
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Abstract Layered transition metal dichalcogenides (TMDs) are a diverse group of materials whose properties vary from semiconducting to metallic with a variety of many body phenomena, ranging from charge density wave (CDW), superconductivity, to Mott-insulators. Recent interest in topologically protected states revealed also that some TMDs host bulk Dirac- or Wyle-semimetallic states and their corresponding surface states. In this review, we focus on the synthesis of TMDs by vacuum processes, such as molecular beam epitaxy (MBE). After an introduction of these preparation methods and categorize the basic electronic properties of TMDs, we address the characterization of vacuum synthesized materials in their ultrathin limit-mainly as a single monolayer material. Scanning tunneling microscopy and angle resolved photoemission spectroscopy has revealed detailed information on how monolayers differ in their properties from multi-layer and bulk materials. The status of monolayer properties is given for the TMDs, where data are available. Distinct modifications of monolayer properties compared to their bulk counterparts are highlighted. This includes the well-known transition from indirect to direct band gap in semiconducting group VI-B TMDs as the material-thickness is reduced to a single molecular layer. In addition, we discuss the new or modified CDW states in monolayer VSe2 and TiTe2, a Mott-insulating state in monolayer 1T-TaSe2, and the monolayer specific 2D topological insulator 1T′-WTe2, which gives rise to a quantum spin Hall insulator. New structural phases, that do not exist in the bulk, may be synthesized in the monolayer by MBE. These phases have special properties, including the Mott insulator 1T-NbSe2, the 2D topological insulators of 1T′-MoTe2, and the CDW material 1T-VTe2. After discussing the pure TMDs, we report the properties of nanostructured or modified TMDs. Edges and mirror twin grain boundaries (MTBs) in 2D materials are 1D structures. In group VI-B semiconductors, these 1D structures may be metallic and their properties obey Tomonaga Luttinger quantum liquid behavior. Formation of Mo-rich MTBs in Mo-dichalcogenides and self-intercalation in between TMD-layers are discussed as potential compositional variants that may occur during MBE synthesis of TMDs or may be induced intentionally during post-growth modifications. In addition to compositional modifications, phase switching and control, in particular between the 1H and 1T (or 1T′) phases, is a recurring theme in TMDs. Methods of phase control by tuning growth conditions or by post-growth modifications, e.g. by electron doping, are discussed. The properties of heterostructures of TMD monolayers are also introduced, with a focus on lateral electronic modifications in the moiré-structures of group VI-B TMDs. The lateral potential induced in the moiré structures forms the basis of the currently debated moiré-excitons. Finally, we review a few cases of molecular adsorption on nanostructured monolayer TMDs. This review is intended to present a comprehensive overview of vacuum studies of fundamental materials' properties of TMDs and should complement the investigations on TMDs prepared by exfoliation or chemical vapor deposition and their applications.
AbstractList Layered transition metal dichalcogenides (TMDs) are a diverse group of materials whose properties vary from semiconducting to metallic with a variety of many body phenomena, ranging from charge density wave (CDW), superconductivity, to Mott-insulators. Recent interest in topologically protected states revealed also that some TMDs host bulk Dirac- or Wyle-semimetallic states and their corresponding surface states. In this review, we focus on the synthesis of TMDs by vacuum processes, such as molecular beam epitaxy (MBE). After an introduction of these preparation methods and categorize the basic electronic properties of TMDs, we address the characterization of vacuum synthesized materials in their ultrathin limit-mainly as a single monolayer material. Scanning tunneling microscopy and angle resolved photoemission spectroscopy has revealed detailed information on how monolayers differ in their properties from multi-layer and bulk materials. The status of monolayer properties is given for the TMDs, where data are available. Distinct modifications of monolayer properties compared to their bulk counterparts are highlighted. This includes the well-known transition from indirect to direct band gap in semiconducting group VI-B TMDs as the material-thickness is reduced to a single molecular layer. In addition, we discuss the new or modified CDW states in monolayer VSe2 and TiTe2, a Mott-insulating state in monolayer 1T-TaSe2, and the monolayer specific 2D topological insulator 1T′-WTe2, which gives rise to a quantum spin Hall insulator. New structural phases, that do not exist in the bulk, may be synthesized in the monolayer by MBE. These phases have special properties, including the Mott insulator 1T-NbSe2, the 2D topological insulators of 1T′-MoTe2, and the CDW material 1T-VTe2. After discussing the pure TMDs, we report the properties of nanostructured or modified TMDs. Edges and mirror twin grain boundaries (MTBs) in 2D materials are 1D structures. In group VI-B semiconductors, these 1D structures may be metallic and their properties obey Tomonaga Luttinger quantum liquid behavior. Formation of Mo-rich MTBs in Mo-dichalcogenides and self-intercalation in between TMD-layers are discussed as potential compositional variants that may occur during MBE synthesis of TMDs or may be induced intentionally during post-growth modifications. In addition to compositional modifications, phase switching and control, in particular between the 1H and 1T (or 1T′) phases, is a recurring theme in TMDs. Methods of phase control by tuning growth conditions or by post-growth modifications, e.g. by electron doping, are discussed. The properties of heterostructures of TMD monolayers are also introduced, with a focus on lateral electronic modifications in the moiré-structures of group VI-B TMDs. The lateral potential induced in the moiré structures forms the basis of the currently debated moiré-excitons. Finally, we review a few cases of molecular adsorption on nanostructured monolayer TMDs. This review is intended to present a comprehensive overview of vacuum studies of fundamental materials' properties of TMDs and should complement the investigations on TMDs prepared by exfoliation or chemical vapor deposition and their applications.
ArticleNumber 100523
Author Kolekar, Sadhu
Coelho, Paula Mariel
Li, Jingfeng
Batzill, Matthias
Lasek, Kinga
Wang, Zhiming
Guo, Lu'an
Zhang, Min
Author_xml – sequence: 1
  givenname: Kinga
  surname: Lasek
  fullname: Lasek, Kinga
  organization: Department of Physics, University of South Florida, Tampa, FL, 33620, USA
– sequence: 2
  givenname: Jingfeng
  surname: Li
  fullname: Li, Jingfeng
  organization: Department of Physics, University of South Florida, Tampa, FL, 33620, USA
– sequence: 3
  givenname: Sadhu
  surname: Kolekar
  fullname: Kolekar, Sadhu
  organization: Department of Physics, University of South Florida, Tampa, FL, 33620, USA
– sequence: 4
  givenname: Paula Mariel
  surname: Coelho
  fullname: Coelho, Paula Mariel
  organization: Department of Physics, University of South Florida, Tampa, FL, 33620, USA
– sequence: 5
  givenname: Lu'an
  surname: Guo
  fullname: Guo, Lu'an
  organization: Department of Physics, University of South Florida, Tampa, FL, 33620, USA
– sequence: 6
  givenname: Min
  surname: Zhang
  fullname: Zhang, Min
  organization: Guangdong Engineering and Technology Research Centre for Advanced Nanomaterials, School of Environment and Civil Engineering, Dongguan University of Technology, Dongguan, 523808, China
– sequence: 7
  givenname: Zhiming
  surname: Wang
  fullname: Wang, Zhiming
  organization: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
– sequence: 8
  givenname: Matthias
  surname: Batzill
  fullname: Batzill, Matthias
  email: mbatzill@usf.edu
  organization: Department of Physics, University of South Florida, Tampa, FL, 33620, USA
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Issue 2
Keywords Monolayer
Mirror grain boundaries
Moiré structures
Molecular adsorption
Angle resolved photoemission spectroscopy
Transition metal dichalcogenides
Defects
Scanning tunneling microscopy
Self-intercalation
Topologically protected states
van der Waals epitaxy
Charge density waves
Dopants
Heterostructures
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Snippet Layered transition metal dichalcogenides (TMDs) are a diverse group of materials whose properties vary from semiconducting to metallic with a variety of many...
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SubjectTerms Angle resolved photoemission spectroscopy
Chalcogenides
Charge density waves
Chemical vapor deposition
Defects
Dopants
Excitons
Grain boundaries
Heterostructures
Mirror grain boundaries
Moiré structures
Molecular adsorption
Molecular beam epitaxy
Monolayer
Monolayers
Multilayers
Nanostructure
Phase control
Phases
Photoelectric emission
Scanning tunneling microscopy
Self-intercalation
Superconductivity
Topological insulators
Topologically protected states
Transition metal compounds
Transition metal dichalcogenides
Two dimensional materials
van der Waals epitaxy
Title Synthesis and characterization of 2D transition metal dichalcogenides: Recent progress from a vacuum surface science perspective
URI https://dx.doi.org/10.1016/j.surfrep.2021.100523
https://www.proquest.com/docview/2568032341
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