Computer simulation of obtaining thin films of silicon carbide

Silicon carbide films are potential candidates for the development of microsystems with harsh environmental conditions. In this work, the production of high-purity silicon carbide films by the electrolytic method is reproduced in a computer model. Single-layer SiC films were deposited on nickel, cop...

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Vydané v:	Physical chemistry chemical physics : PCCP Ročník 25; číslo 5; s. 3834
Hlavní autori:	Galashev, Alexander Y, Abramova, Ksenia A
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	England 01.02.2023
ISSN:	1463-9084, 1463-9084
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