Computer simulation of obtaining thin films of silicon carbide

Silicon carbide films are potential candidates for the development of microsystems with harsh environmental conditions. In this work, the production of high-purity silicon carbide films by the electrolytic method is reproduced in a computer model. Single-layer SiC films were deposited on nickel, cop...

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Bibliographic Details

Published in:	Physical chemistry chemical physics : PCCP Vol. 25; no. 5; p. 3834
Main Authors:	Galashev, Alexander Y, Abramova, Ksenia A
Format:	Journal Article
Language:	English
Published:	England 01.02.2023
ISSN:	1463-9084, 1463-9084
Online Access:	Get more information
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