Improving the quality of meshes for the simulation of semiconductor devices using Lepp-based algorithms

This paper discusses a new post‐process algorithm for generating valid Delaunay meshes for the Box‐method (finite‐volume method) as required in semiconductor device simulation. In such an application, the following requirements must be considered: (i) in critical zones of the device, edges aligned w...

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Bibliographic Details

Published in:	International journal for numerical methods in engineering Vol. 58; no. 2; pp. 333 - 347
Main Authors:	Hitschfeld, N., Villablanca, L., Krause, J., Rivara, M. C.
Format:	Journal Article
Language:	English
Published:	Chichester, UK John Wiley & Sons, Ltd 14.09.2003
Subjects:	control volume method Delaunay meshes Lepp-based algorithms non-obtuse boundary meshes semiconductor device simulation
ISSN:	0029-5981, 1097-0207
Online Access:	Get full text
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