Heterogeneous SRAM Cell Sizing for Low-Power H.264 Applications

In low-voltage operation, static random-access memory (SRAM) bit-cells suffer from large failure probabilities with technology scaling. With the increasing failures, conventional SRAM memory is still designed without considering the importance differences found among the data stored in the SRAM bit-...

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Bibliographic Details
Published in:	IEEE transactions on circuits and systems. I, Regular papers Vol. 59; no. 10; pp. 2275 - 2284
Main Authors:	Kwon, Jinmo, Chang, Ik Joon, Lee, Insoo, Park, Heemin, Park, Jongsun
Format:	Journal Article
Language:	English
Published:	New York IEEE 01.10.2012 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Algorithms Arrays Buffer storage Degradation Dynamic programming Electric potential Failure H.264 systems Heuristic algorithms low-power static random-access memory (SRAM) Noise levels PSNR Random access memory Sizing SRAM bit-cell Static random access memory Streaming media Studies Transistors Voltage
ISSN:	1549-8328, 1558-0806
Online Access:	Get full text
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