Heterogeneous SRAM Cell Sizing for Low-Power H.264 Applications
In low-voltage operation, static random-access memory (SRAM) bit-cells suffer from large failure probabilities with technology scaling. With the increasing failures, conventional SRAM memory is still designed without considering the importance differences found among the data stored in the SRAM bit-...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on circuits and systems. I, Regular papers Jg. 59; H. 10; S. 2275 - 2284 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Journal Article |
| Sprache: | Englisch |
| Veröffentlicht: |
New York
IEEE
01.10.2012
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Schlagworte: | |
| ISSN: | 1549-8328, 1558-0806 |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Abstract | In low-voltage operation, static random-access memory (SRAM) bit-cells suffer from large failure probabilities with technology scaling. With the increasing failures, conventional SRAM memory is still designed without considering the importance differences found among the data stored in the SRAM bit-cells. This paper presents a heterogeneous SRAM sizing approach for the embedded memory of H.264 video processor, where the more important higher order data bits are stored in the relatively larger SRAM bit-cells and the less important bits are stored in the smaller ones. As a result, the failure probabilities significantly decrease for the SRAM cells storing the more important bits, which allows us to obtain the better video quality even in lower voltage operation. In order to find the SRAM bit-cell sizes that achieve the best video quality under SRAM area constraint, we propose a heterogeneous SRAM sizing algorithm based on a dynamic programming. Compared to the brute-force search, the proposed algorithm greatly reduces the computation time needed to select the SRAM bit-cell sizes of 8 bit pixel. Experimental results show that under iso-area condition, the heterogeneous SRAM array achieves significant PSNR improvements (average 4.49 dB at 900-mV operation) compared to the conventional one with identical cell sizing. |
|---|---|
| AbstractList | In low-voltage operation, static random-access memory (SRAM) bit-cells suffer from large failure probabilities with technology scaling. With the increasing failures, conventional SRAM memory is still designed without considering the importance differences found among the data stored in the SRAM bit-cells. This paper presents a heterogeneous SRAM sizing approach for the embedded memory of H.264 video processor, where the more important higher order data bits are stored in the relatively larger SRAM bit-cells and the less important bits are stored in the smaller ones. As a result, the failure probabilities significantly decrease for the SRAM cells storing the more important bits, which allows us to obtain the better video quality even in lower voltage operation. In order to find the SRAM bit-cell sizes that achieve the best video quality under SRAM area constraint, we propose a heterogeneous SRAM sizing algorithm based on a dynamic programming. Compared to the brute-force search, the proposed algorithm greatly reduces the computation time needed to select the SRAM bit-cell sizes of 8 bit pixel. Experimental results show that under iso-area condition, the heterogeneous SRAM array achieves significant PSNR improvements (average 4.49 dB at 900-mV operation) compared to the conventional one with identical cell sizing. |
| Author | Ik Joon Chang Jongsun Park Insoo Lee Heemin Park Jinmo Kwon |
| Author_xml | – sequence: 1 givenname: Jinmo surname: Kwon fullname: Kwon, Jinmo – sequence: 2 givenname: Ik Joon surname: Chang fullname: Chang, Ik Joon – sequence: 3 givenname: Insoo surname: Lee fullname: Lee, Insoo – sequence: 4 givenname: Heemin surname: Park fullname: Park, Heemin – sequence: 5 givenname: Jongsun surname: Park fullname: Park, Jongsun |
| BookMark | eNp9kE1LAzEQhoMoWKs_QLwsePGyNZNssslJSlFbqCi2npc0nS0p201NthT99W4_8ODB08zheYZ33gtyWvsaCbkG2gOg-n46mIx6jALrMVCCc3FCOiCESqmi8nS3ZzpVnKlzchHjklKmKYcOeRhig8EvsEa_icnkvf-SDLCqkon7dvUiKX1Ixn6bvvkthmTYYzJL-ut15axpnK_jJTkrTRXx6ji75OPpcToYpuPX59GgP04tZ7JJrZIw05abXCuR5yhKYFppZa3hRqC2M6GF0pihLXMtZyW3dJ5Ba9F5brIZ75K7w9118J8bjE2xctG2Qc0-eAEyh4xLRXWL3v5Bl34T6jZdAVQxkIpT2lL5gbLBxxiwLKxr9j81wbiqRYtdscWu2GJXbHEstjXhj7kObmXC17_OzcFxiPjLSxAMcs1_AGHigtc |
| CODEN | ITCSCH |
| CitedBy_id | crossref_primary_10_1109_TCSI_2015_2497558 crossref_primary_10_1049_iet_cdt_2019_0019 crossref_primary_10_1109_TCSI_2016_2585657 crossref_primary_10_1109_ACCESS_2022_3156274 crossref_primary_10_1109_JSSC_2015_2408332 crossref_primary_10_1109_TCSVT_2018_2890383 crossref_primary_10_1109_TCSI_2021_3052985 crossref_primary_10_1109_TCOMM_2018_2841406 crossref_primary_10_1109_TVLSI_2015_2497368 crossref_primary_10_1109_LES_2017_2750140 crossref_primary_10_1109_TCSI_2017_2691354 crossref_primary_10_1145_3589766 crossref_primary_10_1109_TVLSI_2017_2715002 crossref_primary_10_1109_ACCESS_2023_3283409 crossref_primary_10_1109_ACCESS_2025_3527333 crossref_primary_10_1109_TCSII_2018_2869945 crossref_primary_10_1109_TVLSI_2019_2935832 crossref_primary_10_1109_JPROC_2020_3030121 crossref_primary_10_1109_JETCAS_2023_3234402 crossref_primary_10_1109_TBDATA_2017_2750699 crossref_primary_10_1109_JETCAS_2018_2828129 crossref_primary_10_1109_TVLSI_2015_2503733 crossref_primary_10_1145_3597024 crossref_primary_10_1109_TVLSI_2017_2787043 crossref_primary_10_1109_JPROC_2020_3020792 crossref_primary_10_1109_TCSI_2016_2589118 crossref_primary_10_1109_TCSII_2013_2291091 crossref_primary_10_1109_TCSII_2012_2231018 crossref_primary_10_1109_JETCAS_2018_2881461 crossref_primary_10_1109_TVLSI_2021_3098533 crossref_primary_10_1109_ACCESS_2019_2908997 |
| Cites_doi | 10.1007/978-1-4615-6199-6 10.1109/92.645063 10.1109/VLSIC.2007.4342739 10.1109/TVLSI.2007.909792 10.1109/JSSC.2008.2011972 10.1109/4.126534 10.1109/ISSCC.2003.1234308 10.1109/TCAD.2005.852295 10.1109/TCSI.2010.2103154 10.1049/iet-cds.2010.0137 10.1109/4.913744 10.1109/JSSC.1987.1052809 10.1109/TCSI.2009.2016633 10.1109/ISSCC.2006.1696326 10.1109/TCSVT.2011.2105550 |
| ContentType | Journal Article |
| Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Oct 2012 |
| Copyright_xml | – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Oct 2012 |
| DBID | 97E RIA RIE AAYXX CITATION 7SP 8FD L7M F28 FR3 |
| DOI | 10.1109/TCSI.2012.2185335 |
| DatabaseName | IEEE All-Society Periodicals Package (ASPP) 2005–Present IEEE All-Society Periodicals Package (ASPP) 1998–Present IEEE Electronic Library (IEL) CrossRef Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace ANTE: Abstracts in New Technology & Engineering Engineering Research Database |
| DatabaseTitle | CrossRef Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts Engineering Research Database ANTE: Abstracts in New Technology & Engineering |
| DatabaseTitleList | Technology Research Database Engineering Research Database |
| Database_xml | – sequence: 1 dbid: RIE name: IEEE Electronic Library (IEL) url: https://ieeexplore.ieee.org/ sourceTypes: Publisher |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1558-0806 |
| EndPage | 2284 |
| ExternalDocumentID | 2778061511 10_1109_TCSI_2012_2185335 6152179 |
| Genre | orig-research |
| GroupedDBID | 0R~ 29I 4.4 5VS 6IK 97E AAJGR AARMG AASAJ AAWTH ABAZT ABQJQ ABVLG ACIWK AETIX AGQYO AGSQL AHBIQ AIBXA AKJIK AKQYR ALMA_UNASSIGNED_HOLDINGS ATWAV BEFXN BFFAM BGNUA BKEBE BPEOZ EBS EJD HZ~ H~9 IFIPE IPLJI JAVBF M43 O9- OCL PZZ RIA RIE RNS VJK AAYXX CITATION 7SP 8FD L7M RIG F28 FR3 |
| ID | FETCH-LOGICAL-c326t-c861b9c3a798577e5f129898cca3a5e9cb59589e4ecf796bf3c0d418610d7a4b3 |
| IEDL.DBID | RIE |
| ISICitedReferencesCount | 45 |
| ISICitedReferencesURI | http://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=Summon&SrcAuth=ProQuest&DestLinkType=CitingArticles&DestApp=WOS_CPL&KeyUT=000309473200011&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D |
| ISSN | 1549-8328 |
| IngestDate | Sun Sep 28 11:54:18 EDT 2025 Mon Jun 30 10:09:54 EDT 2025 Sat Nov 29 06:14:36 EST 2025 Tue Nov 18 22:31:17 EST 2025 Tue Aug 26 17:01:13 EDT 2025 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 10 |
| Language | English |
| License | https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c326t-c861b9c3a798577e5f129898cca3a5e9cb59589e4ecf796bf3c0d418610d7a4b3 |
| Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 content type line 23 |
| PQID | 1082168300 |
| PQPubID | 85411 |
| PageCount | 10 |
| ParticipantIDs | proquest_journals_1082168300 crossref_citationtrail_10_1109_TCSI_2012_2185335 proquest_miscellaneous_1671436809 crossref_primary_10_1109_TCSI_2012_2185335 ieee_primary_6152179 |
| PublicationCentury | 2000 |
| PublicationDate | 2012-10-01 |
| PublicationDateYYYYMMDD | 2012-10-01 |
| PublicationDate_xml | – month: 10 year: 2012 text: 2012-10-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationPlace | New York |
| PublicationPlace_xml | – name: New York |
| PublicationTitle | IEEE transactions on circuits and systems. I, Regular papers |
| PublicationTitleAbbrev | TCSI |
| PublicationYear | 2012 |
| Publisher | IEEE The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher_xml | – name: IEEE – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| References | ref13 cormen (ref21) 2009 ref15 chien (ref19) 2005; 43 (ref20) 0 ref14 taur (ref11) 2002 ref10 (ref12) 0 ref2 zhou (ref25) 2010 ref17 ref16 ref18 (ref22) 0 (ref24) 0 ref23 lin (ref1) 2006 ref8 ref7 ref9 ref4 ref3 do (ref6) 2011; 58 ref5 |
| References_xml | – ident: ref23 doi: 10.1007/978-1-4615-6199-6 – ident: ref17 doi: 10.1109/92.645063 – ident: ref4 doi: 10.1109/VLSIC.2007.4342739 – year: 0 ident: ref22 – ident: ref9 doi: 10.1109/TVLSI.2007.909792 – ident: ref5 doi: 10.1109/JSSC.2008.2011972 – start-page: 323 year: 2009 ident: ref21 publication-title: Introduction to Algorithms – ident: ref2 doi: 10.1109/4.126534 – start-page: 112 year: 2010 ident: ref25 article-title: Total area optimization for ultra-low voltage SRAM with sizing, redundancy, and error correction codes publication-title: Proc IEEE Int Conf Comput Design – ident: ref8 doi: 10.1109/ISSCC.2003.1234308 – year: 2002 ident: ref11 publication-title: Fundametals of Modern VLSI Devices – start-page: 1626 year: 2006 ident: ref1 article-title: A 5 mW MPEG4 SP encoder with 2D bandwidth-sharing motion estimation for mobile applications publication-title: Proc ISSCC Dig Tech Papers – ident: ref15 doi: 10.1109/TCAD.2005.852295 – volume: 58 start-page: 1252 year: 2011 ident: ref6 article-title: An 8T differential SRAM with improved noise margin for bit-interleaving in 65 nm CMOS publication-title: IEEE Trans Circuits Syst I Reg Papers doi: 10.1109/TCSI.2010.2103154 – volume: 43 start-page: 122 year: 2005 ident: ref19 article-title: Hardware architecture design of video compression for multimedia communication systems publication-title: IEEE Commun Mag – ident: ref3 doi: 10.1049/iet-cds.2010.0137 – year: 0 ident: ref24 publication-title: Predictive Technology Model (PTM) Website – ident: ref10 doi: 10.1109/4.913744 – year: 0 ident: ref20 publication-title: H 264/AVC Reference Software JM 16 0 – ident: ref13 doi: 10.1109/JSSC.1987.1052809 – ident: ref16 doi: 10.1109/4.913744 – year: 0 ident: ref12 publication-title: H 264 Advanced Video Coding for Generic Audiovisual Services – ident: ref18 doi: 10.1109/TCSI.2009.2016633 – ident: ref14 doi: 10.1109/ISSCC.2006.1696326 – ident: ref7 doi: 10.1109/TCSVT.2011.2105550 |
| SSID | ssj0029031 |
| Score | 2.248837 |
| Snippet | In low-voltage operation, static random-access memory (SRAM) bit-cells suffer from large failure probabilities with technology scaling. With the increasing... |
| SourceID | proquest crossref ieee |
| SourceType | Aggregation Database Enrichment Source Index Database Publisher |
| StartPage | 2275 |
| SubjectTerms | Algorithms Arrays Buffer storage Degradation Dynamic programming Electric potential Failure H.264 systems Heuristic algorithms low-power static random-access memory (SRAM) Noise levels PSNR Random access memory Sizing SRAM bit-cell Static random access memory Streaming media Studies Transistors Voltage |
| Title | Heterogeneous SRAM Cell Sizing for Low-Power H.264 Applications |
| URI | https://ieeexplore.ieee.org/document/6152179 https://www.proquest.com/docview/1082168300 https://www.proquest.com/docview/1671436809 |
| Volume | 59 |
| WOSCitedRecordID | wos000309473200011&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| journalDatabaseRights | – providerCode: PRVIEE databaseName: IEEE Electronic Library (IEL) customDbUrl: eissn: 1558-0806 dateEnd: 99991231 omitProxy: false ssIdentifier: ssj0029031 issn: 1549-8328 databaseCode: RIE dateStart: 20040101 isFulltext: true titleUrlDefault: https://ieeexplore.ieee.org/ providerName: IEEE |
| link | http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV3dS8MwED9UfNAHv8X5RQSfxM50bZrck4yhTFARp-BbadMrDMYmOhX8682ltQqK4FuhSRt-d-nd9S73AzjMFMVFpjAgshTEURkGeaY6gTVMMGlRKutb5l_q62vz8IA3M3DcnIUhIl98Rm2-9Ln8YmJf-FfZScLGRuMszGqdVGe1muAKZVT1Ro0xcFpq6gxmKPHkrje44CKuTrvD1skzu33ZIE-q8uNL7M3L-fL_FrYCS7UbKbqV3FdhhsZrsPitueA6nPa50mXiFIRcdC8Gt90r0aPRSAyG726AcN6quJy8BTfMkyb6beeziO63dPYG3J-f3fX6QU2XEFjng00dvEmYo40yjUZpTaoMub26cTKKnEjQ5gqVQYrJlhqTvIysLOLQzZKFzuI82oS58WRMWyAKlRkyZYFKk_PYDGY6oQQN5S5iLgvbAvkJYGrrXuJMaTFKfUwhMWXMU8Y8rTFvwVEz5bFqpPHX4HUGuRlY49uC3U8ppfVWe-YOpx23xEjKFhw0t90m4cxH5iFOw4Rp3hMjcfv3J-_AAr-_qtLbhbnp0wvtwbx9nQ6fn_a9pn0Ab3DOoQ |
| linkProvider | IEEE |
| linkToHtml | http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV3dS-NAEB_8OFAf9M4PrJ97cE9i6qbJZneepBSlYi1y7YFvIdlMQCitaFXwr3dnG3OCIvgWyG5YfrPJzGRmfz-AP5miuMgUBkSWgjgqwyDPVCuwhgUmLUplPWV-T_f75uYGr-fguD4LQ0S--YyafOlr-cXEPvKvspOEnY3GeVhk5azqtFadXqGMZuyoMQZun5qqhhlKPBl2BhfcxtVqttg_eW23_17Iy6p8-BZ7B3O-9r2l_YTVKpAU7Znlf8Ecjddh5R294AacdrnXZeK2CLn8Xgz-tq9Eh0YjMbh9cQOEi1dFb_IcXLNSmug2XdQi2u8K2pvw7_xs2OkGlWBCYF0UNnUAJ2GONso0GqU1qTJkgnXjrBQ5o6DNFSqDFJMtNSZ5GVlZxKGbJQudxXm0BQvjyZi2QRQqM2TKApUmF7MZzHRCCRrKXc5cFrYB8g3A1FZs4ixqMUp9ViExZcxTxjytMG_AUT3lbkal8dXgDQa5Hljh24C9Nyul1cv2wBynLbfESMoG_K5vu9eEax-ZhzgNExZ6T4zEnc-ffAhL3eFVL-1d9C93YZnXMuvZ24OF6f0j7cMP-zS9fbg_8LvuFWBo0eo |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Heterogeneous+SRAM+Cell+Sizing+for+Low-Power+H.264+Applications&rft.jtitle=IEEE+transactions+on+circuits+and+systems.+I%2C+Regular+papers&rft.au=Kwon%2C+Jinmo&rft.au=Chang%2C+Ik+Joon&rft.au=Lee%2C+Insoo&rft.au=Park%2C+Heemin&rft.date=2012-10-01&rft.issn=1549-8328&rft.eissn=1558-0806&rft.volume=59&rft.issue=10&rft.spage=2275&rft.epage=2284&rft_id=info:doi/10.1109%2FTCSI.2012.2185335&rft.externalDBID=n%2Fa&rft.externalDocID=10_1109_TCSI_2012_2185335 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1549-8328&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1549-8328&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1549-8328&client=summon |