A driving pulse edge modulation technique and its complex programming logic devices implementation

With the continual increase in switching speed and rating of power semiconductors, the switching voltage spike becomes a serious problem. This paper describes a new technique of driving pulse edge modulation for insulated gate bipolar transistors （IGBTs）. By modulating the density and width of the p...

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Vydané v:	Frontiers of information technology & electronic engineering Ročník 16; číslo 12; s. 1088 - 1098
Hlavní autori:	Chen, Xiao, Qu, Dong-chang, Guo, Yong, Chen, Guo-zhu
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Hangzhou Zhejiang University Press 01.12.2015 Springer Nature B.V
Predmet:	Circuits Communications Engineering Computer Hardware Computer Science Computer Systems Organization and Communication Networks Electric potential Electrical Engineering Electronics and Microelectronics Instrumentation Insulated gate bipolar transistors Modulation Networks Programmable logic devices Semiconductor devices Semiconductors Spikes Switching Voltage Driving pulse edge modulation Switching voltage spike Complex programmable logic device (CPLD) Active gate drive TN303
ISSN:	2095-9184, 2095-9230
On-line prístup:	Získať plný text
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