A driving pulse edge modulation technique and its complex programming logic devices implementation

With the continual increase in switching speed and rating of power semiconductors, the switching voltage spike becomes a serious problem. This paper describes a new technique of driving pulse edge modulation for insulated gate bipolar transistors （IGBTs）. By modulating the density and width of the p...

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Bibliographic Details
Published in:	Frontiers of information technology & electronic engineering Vol. 16; no. 12; pp. 1088 - 1098
Main Authors:	Chen, Xiao, Qu, Dong-chang, Guo, Yong, Chen, Guo-zhu
Format:	Journal Article
Language:	English
Published:	Hangzhou Zhejiang University Press 01.12.2015 Springer Nature B.V
Subjects:	Circuits Communications Engineering Computer Hardware Computer Science Computer Systems Organization and Communication Networks Electric potential Electrical Engineering Electronics and Microelectronics Instrumentation Insulated gate bipolar transistors Modulation Networks Programmable logic devices Semiconductor devices Semiconductors Spikes Switching Voltage Driving pulse edge modulation Switching voltage spike Complex programmable logic device (CPLD) Active gate drive TN303
ISSN:	2095-9184, 2095-9230
Online Access:	Get full text
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