A driving pulse edge modulation technique and its complex programming logic devices implementation

With the continual increase in switching speed and rating of power semiconductors, the switching voltage spike becomes a serious problem. This paper describes a new technique of driving pulse edge modulation for insulated gate bipolar transistors （IGBTs）. By modulating the density and width of the p...

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Veröffentlicht in:Frontiers of information technology & electronic engineering Jg. 16; H. 12; S. 1088 - 1098
Hauptverfasser: Chen, Xiao, Qu, Dong-chang, Guo, Yong, Chen, Guo-zhu
Format: Journal Article
Sprache:Englisch
Veröffentlicht: Hangzhou Zhejiang University Press 01.12.2015
Springer Nature B.V
Schlagworte:
Circuits
Communications Engineering
Computer Hardware
Computer Science
Computer Systems Organization and Communication Networks
Electric potential
Electrical Engineering
Electronics and Microelectronics
Instrumentation
Insulated gate bipolar transistors
Modulation
Networks
Programmable logic devices
Semiconductor devices
Semiconductors
Spikes
Switching
Voltage
Driving pulse edge modulation
Switching voltage spike
Complex programmable logic device (CPLD)
Active gate drive
TN303
ISSN:2095-9184, 2095-9230
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Zusammenfassung:With the continual increase in switching speed and rating of power semiconductors, the switching voltage spike becomes a serious problem. This paper describes a new technique of driving pulse edge modulation for insulated gate bipolar transistors （IGBTs）. By modulating the density and width of the pulse trains, without regulating the hardware circuit, the slope of the gate driving voltage is controlled to change the switching speed. This technique is used in the driving circuit based on complex programmable logic devices （CPLDs）, and the switching voltage spike of IGBTs can be restrained through software, which is easier and more flexible to adjust. Experimental results demonstrate the effectiveness and practicability of the proposed method.
Bibliographie:With the continual increase in switching speed and rating of power semiconductors, the switching voltage spike becomes a serious problem. This paper describes a new technique of driving pulse edge modulation for insulated gate bipolar transistors （IGBTs）. By modulating the density and width of the pulse trains, without regulating the hardware circuit, the slope of the gate driving voltage is controlled to change the switching speed. This technique is used in the driving circuit based on complex programmable logic devices （CPLDs）, and the switching voltage spike of IGBTs can be restrained through software, which is easier and more flexible to adjust. Experimental results demonstrate the effectiveness and practicability of the proposed method.
Driving pulse edge modulation, Switching voltage spike, Complex programmable logic device （CPLD）, Active gate drive
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ISSN:2095-9184
2095-9230
DOI:10.1631/FITEE.1500111