Materials challenges and opportunities for brain-inspired computing

Inspired by the working principles of the human brain, neuromorphic computing shows great potential in executing cognitive tasks such as learning and adaptation with high energy efficiency. A major challenge is the development of devices and circuits that can naturally replicate the behavior of neur...

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Published in:MRS bulletin Vol. 46; no. 10; pp. 978 - 986
Main Authors: Zhao, Y. D., Kang, J. F., Ielmini, D.
Format: Journal Article
Language:English
Published: Cham Springer International Publishing 01.10.2021
Springer Nature B.V
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ISSN:0883-7694, 1938-1425
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Abstract Inspired by the working principles of the human brain, neuromorphic computing shows great potential in executing cognitive tasks such as learning and adaptation with high energy efficiency. A major challenge is the development of devices and circuits that can naturally replicate the behavior of neurons and synapses, thus reducing the complexity, the energy consumption, and the area of the neuromorphic chip. Recently, much progress has been achieved in realizing hardware neuromorphic circuits with emerging “memristive” materials and devices, which present a wealth of physical phenomena that appear promising for the ad hoc design of virtually any neuromorphic function in the scale of few square nanometers on a silicon chip. In this article, an overview of material opportunities on emerging devices for brain-inspired computing is provided. We will summarize the biological functions of neuromorphic elements, discuss the requirements for their material counterparts and review the recent progress, and illustrate some cognitive computing primitives in hardware networks. Finally, the upcoming materials challenges will be discussed. Graphic abstract
AbstractList Inspired by the working principles of the human brain, neuromorphic computing shows great potential in executing cognitive tasks such as learning and adaptation with high energy efficiency. A major challenge is the development of devices and circuits that can naturally replicate the behavior of neurons and synapses, thus reducing the complexity, the energy consumption, and the area of the neuromorphic chip. Recently, much progress has been achieved in realizing hardware neuromorphic circuits with emerging “memristive” materials and devices, which present a wealth of physical phenomena that appear promising for the ad hoc design of virtually any neuromorphic function in the scale of few square nanometers on a silicon chip. In this article, an overview of material opportunities on emerging devices for brain-inspired computing is provided. We will summarize the biological functions of neuromorphic elements, discuss the requirements for their material counterparts and review the recent progress, and illustrate some cognitive computing primitives in hardware networks. Finally, the upcoming materials challenges will be discussed. Graphic abstract
Inspired by the working principles of the human brain, neuromorphic computing shows great potential in executing cognitive tasks such as learning and adaptation with high energy efficiency. A major challenge is the development of devices and circuits that can naturally replicate the behavior of neurons and synapses, thus reducing the complexity, the energy consumption, and the area of the neuromorphic chip. Recently, much progress has been achieved in realizing hardware neuromorphic circuits with emerging “memristive” materials and devices, which present a wealth of physical phenomena that appear promising for the ad hoc design of virtually any neuromorphic function in the scale of few square nanometers on a silicon chip. In this article, an overview of material opportunities on emerging devices for brain-inspired computing is provided. We will summarize the biological functions of neuromorphic elements, discuss the requirements for their material counterparts and review the recent progress, and illustrate some cognitive computing primitives in hardware networks. Finally, the upcoming materials challenges will be discussed.Graphic abstract
Author Ielmini, D.
Zhao, Y. D.
Kang, J. F.
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Cites_doi 10.1038/nnano.2011.96
10.1126/science.aaw5581
10.1038/s41598-017-05480-0
10.1103/PhysRevApplied.13.064056
10.1038/s41467-017-02337-y
10.1038/s41586-019-1677-2
10.1038/srep18639
10.1038/s41928-018-0023-2
10.1038/s41586-018-0632-y
10.1038/ncomms15217
10.1038/s41467-018-07979-0
10.1109/JEDS.2019.2915975
10.1038/s41467-020-17215-3
10.1002/aelm.201870056
10.1038/nn.3851
10.1002/adma.202003984
10.1038/srep29545
10.1038/nrn3353
10.1109/TED.2015.2439635
10.1523/JNEUROSCI.1425-06.2006
10.1038/s41586-019-1424-8
10.1109/JPROC.2014.2304638
10.1038/nn1387
10.1038/nmat3510
10.1038/s41467-019-11198-6
10.1126/science.1254642
10.1007/978-3-642-33269-2_16
10.1037/0278-7393.25.5.1161
10.1038/s41467-018-05517-6
10.1016/j.neucom.2016.10.012
10.1126/sciadv.1701329
10.1109/JPROC.2017.2684830
10.1038/ncomms14736
10.1038/ncomms15448
10.1016/j.mee.2017.09.001
10.1039/C8NR07135G
10.1021/nn202983n
10.1109/MCSE.2017.33
10.1126/science.aac9439
10.1007/s00422-006-0068-6
10.1126/science.aao3212
10.1038/srep04906
10.1126/sciadv.1501326
10.1109/MM.2018.112130359
10.1038/nnano.2016.70
10.1021/acsaelm.9b00011
10.1109/IEDM.2013.6724601
10.1038/nature16961
10.1002/aisy.202000096
10.1038/s41467-020-15158-3
10.1186/s11671-020-3249-7
10.1038/s41586-019-1013-x
10.1007/BF02478259
10.1038/s41928-017-0006-8
10.1002/adma.201602976
10.1002/aisy.202000224
10.1109/5.58356
10.1126/science.aav4450
10.1021/nl904092h
10.1113/jphysiol.1952.sp004718
10.1073/pnas.1105933108
10.1016/j.jallcom.2020.154434
10.1038/s41565-020-0722-5
10.1002/adma.201404531
10.1038/nmat4756
10.1038/nmat3054
10.1038/nature11451
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References ZidanMAStrachanJPLuWDNat. Electron.201812210.1038/s41928-017-0006-8
DuttaSPariharAKhannaAGomezJDattaSNat. Commun.201910329910.1038/s41467-019-11198-61:CAS:528:DC%2BC1MXhsVeks73K
S. Yu, P.-Y. Chen, Y. Cao, L. Xia, Y. Wang, H. Wu, 2015 IEEE International Electron Devices Meeting (Washington, DC, December 7–9, 2015), p. 17.3.1
SchneiderMLDonnellyCARussekSEBaekBPufallMRHopkinsPFDresselhausPDBenzSPRippardWHSci. Adv.20184e170132910.1126/sciadv.1701329
ChuangK-CChuC-YZhangH-XLuoJ-DLiW-SLiY-SChengH-CIEEE J. Electron Dev. Soc.201975891:CAS:528:DC%2BB3cXotlenuw%3D%3D10.1109/JEDS.2019.2915975
DaviesMSrinivasaNLinT-HChinyaGCaoYChodaySHDimouGJoshiPImamNJainSLiaoYLinC-KLinesALiuRMathaikuttyDMcCoySPaulATseJVenkataramananGWengY-HWildAYangYWangHIEEE Micro2018388210.1109/MM.2018.112130359
IlyasNLiDLiCJiangXJiangYLiWNano. Res. Lett.202015301:CAS:528:DC%2BB3cXjsF2iurw%3D10.1186/s11671-020-3249-7
TumaTPantaziALe GalloMSebastianAEleftheriouENat. Nanotechnol.2016116931:CAS:528:DC%2BC28XotV2nt74%3D10.1038/nnano.2016.70
FullerEJKeeneSTMelianasAWangZAgarwalSLiYTuchmanYJamesCDMarinellaMJYangJJScience20193645701:CAS:528:DC%2BC1MXptFalur0%3D10.1126/science.aaw5581
QiaoNMostafaHCorradiFOsswaldMStefaniniFSumislawskaDIndiveriGFront. Neuro. Sci.20159141
JoSHChangTEbongIBhadviyaBBMazumderPLuWNano Lett.20101012971:CAS:528:DC%2BC3cXisFGnu7k%3D10.1021/nl904092h
BurrGWShelbyRMSidlerSdi NolfoCJangJBoybatIShenoyRSNarayananPVirwaniKGiacomettiEUKurdiBNHwangHIEEE Trans. Electron Devices201562349810.1109/TED.2015.2439635
MerollaPAArthurJVAlvarez-IcazaRCassidyASSawadaJAkopyanFJacksonBLImamNGuoCNakamuraYScience20143456681:CAS:528:DC%2BC2cXht12gtLbN10.1126/science.1254642
LiYFullerEJSugarJDYooSAshbyDSBennettCHHortonRDBartschMSMarinellaMJLuWDTalinAAAdv. Mater.20203220039841:CAS:528:DC%2BB3cXhvFSisLnM10.1002/adma.202003984
RomeraMTalatchianPTsunegiSAraujoFACrosVBortolottiPTrastoyJYakushijiKFukushimaAKubotaHYuasaSErnoultMVodenicarevicDHirtzlinTLocatelliNQuerliozDGrollierJNature20185632301:CAS:528:DC%2BC1cXitVCitL7F10.1038/s41586-018-0632-y
LiCGaoBYaoYGuanXShenXWangYHuangPLiuLLiuXLiJAdv. Mater.201729160297610.1002/adma.2016029761:CAS:528:DC%2BC2sXpsVOksQ%3D%3D
SimpsonRFonsPKolobovAFukayaTKrbalMYagiTTominagaJNat. Nanotechnol.201165011:CAS:528:DC%2BC3MXotlCktL4%3D10.1038/nnano.2011.96
M.-H. Wu, M.-C. Hong, C.-C. Chang, P. Sahu, J.-H. Wei, H.-Y. Lee, S.-S. Sheu, T.-H. Hou, 2019 Symposium on VLSI Technology (IEEE, Kyoto, Japan, June 9–14, 2019), p. T34
KandelERSchwartzJHJessellTMSiegelbaumSAHudspethAJPrinciples of Neural Science20135Columbia, MDCenveo Publisher Services
BerdanRVasilakiEKhiatAIndiveriGSerbAProdromakisTSci. Rep.20166186391:CAS:528:DC%2BC28XjslSgtA%3D%3D10.1038/srep18639
RubinDCHintonSWenzelAJ. Exp. Psychol. Learn. Mem. Cogn.199925116110.1037/0278-7393.25.5.1161
PickettMDMedeiros-RibeiroGWilliamsRSNat. Mater.2013121141:CAS:528:DC%2BC38XhvVersr%2FP10.1038/nmat3510
SrinivasanGSenguptaARoyKSci. Rep.20166295451:CAS:528:DC%2BC2sXksVektbc%3D10.1038/srep29545
CooperLNBearMFNat. Rev. Neurosci.2012137981:CAS:528:DC%2BC38XhsFeqsrzL10.1038/nrn3353
GjorgjievaJClopathCAudetJPfisterJPProc. Natl. Acad. Sci. U.S.A.2011108193831:CAS:528:DC%2BC3MXhs1eitb7K10.1073/pnas.1105933108
HodgkinALHuxleyAFJ. Physiol.19521164731:STN:280:DyaG38%2Fns1yhtg%3D%3D10.1113/jphysiol.1952.sp004718
S. Santurkar, B. Rajendran, 2015 International Joint Conference on Neural Networks (IJCNN) (IEEE, Killarney, Ireland, July 12–17, 2015), p. 1
SilverDHuangAMaddisonCJGuezASifreLvan den DriesscheGSchrittwieserJAntonoglouIPanneershelvamVLanctotMDielemanSGreweDNhamJKalchbrennerNSutskeverILillicrapTLeachMKavukcuogluKGraepelTHassabisDNature20165294841:CAS:528:DC%2BC28Xhs12is7w%3D10.1038/nature16961
TrenholmSMcLaughlinAJSchwabDJTurnerMHSmithRGRiekeFAwatramaniGBNat. Neurosci.20141717591:CAS:528:DC%2BC2cXhvVSqsbnK10.1038/nn.3851
HodgkinALHuxleyAFJ. Phys.19521175001:STN:280:DyaG3s%2FhsFGjug%3D%3D
LeeMChoSWKimSJKwakJYJuHYiYCheongB-KLeeSPhys. Rev. Appl.2020130640561:CAS:528:DC%2BB3cXhsFCiur7O10.1103/PhysRevApplied.13.064056
MulaosmanovicHChiccaEBerteleMMikolajickTSlesazeckSNanoscale201810217551:CAS:528:DC%2BC1cXitVGks7nL10.1039/C8NR07135G
S. Dünkel, M. Trentzsch, R. Richter, P. Moll, C. Fuchs, O. Gehring, M. Majer, S. Wittek, B. Müller, T. Melde, 2017 IEEE International Electron Devices Meeting (San Francisco, December 2–6, 2017), p. 19.7.1
MeadCProc. IEEE199078162910.1109/5.58356
RoyKJaiswalAPandaPNature20195756071:CAS:528:DC%2BC1MXit1OhsrrP10.1038/s41586-019-1677-2
WangZZengTRenYLinYXuHZhaoXLiuYIelminiDNat. Commun.20201115101:CAS:528:DC%2BB3cXlvFCqu7c%3D10.1038/s41467-020-15158-3
LavzinMRapoportSPolskyAGarionLSchillerJNature20124903971:CAS:528:DC%2BC38Xht1ynt7jJ10.1038/nature11451
PfisterJPGerstnerWJ. Neurosci.20062696731:CAS:528:DC%2BD28XhtVCgu7jJ10.1523/JNEUROSCI.1425-06.2006
LiYZhongYZhangJXuLWangQSunHTongHChengXMiaoXSci. Rep.2014449061:CAS:528:DC%2BC2MXktlOntbg%3D10.1038/srep04906
WuHWangXHGaoBDengNLuZHauknessBBronnerGQianHProc. IEEE201710517701:CAS:528:DC%2BC1cXntlOqtbk%3D10.1109/JPROC.2017.2684830
GongCZhangXScience2019363eaav44501:CAS:528:DC%2BC1MXivVOis74%3D10.1126/science.aav4450
ManningHGNiosiFda RochaCGBellewATO’CallaghanCBiswasSFlowersPFWileyBJHolmesJDFerreiraMSBolandJJNat. Commun.20189321910.1038/s41467-018-05517-61:CAS:528:DC%2BC1cXhsFart7bJ
WangZJoshiSSavel’evSSongWMidyaRLiYRaoMYanPAsapuSZhuoYNat. Electron.2018113710.1038/s41928-018-0023-2
BoynSGrollierJLecerfGXuBLocatelliNFusilSGirodSCarrétéroCGarciaKXavierSTomasJBellaicheLBibesMBarthélémyASaïghiSGarciaVNat. Commun.20178147361:CAS:528:DC%2BC2sXls1KhtLc%3D10.1038/ncomms14736
HuangPLiZDongZHanRZhouZZhuDLiuLLiuXKangJACS Appl. Electron. Mater.201918451:CAS:528:DC%2BC1MXpvFKmsL8%3D10.1021/acsaelm.9b00011
MilanoGPedrettiGFrettoMBoarinoLBenfenatiFIelminiDValovIRicciardiCAdv. Intell. Syst.20202200009610.1002/aisy.202000096
S. Choudhary, S. Sloan, S. Fok, A. Neckar, E. Trautmann, P. Gao, T. Stewart, C. Eliasmith, K. Boahen, 2012 International Conference on Artificial Neural Networks (Springer, Berlin, Germany, 2012), p. 121
FurberSBGalluppiFTempleSPlanaLAProc. IEEE201410265210.1109/JPROC.2014.2304638
LinYZengTXuHWangZZhaoXLiuWMaJLiuYAdv. Electron. Mater.20184187005610.1002/aelm.2018700561:CAS:528:DC%2BC1cXisVKqs73F
CortiEJimenezJACNiangKMRobertsonJMoselundKEGotsmannBIonescuAMKargSFront. Neuro. Sci.20211519
C.-W. Hsu, C.-C. Wan, I.-T. Wang, M.-C. Chen, C.-L. Lo, Y.-J. Lee, W.-Y. Jang, C.-H. Lin, T.-H. Hou, 2013 IEEE International Electron Devices Meeting (Washington, DC, December 9–11, 2013), p. 10.4.1
PedrettiGMiloVAmbrogioSCarboniRBianchiSCalderoniARamaswamyNSpinelliAIelminiDSci. Rep.2017752881:STN:280:DC%2BC1cjnsVaqsg%3D%3D10.1038/s41598-017-05480-0
WangHNat Neurosci.200581871:CAS:528:DC%2BD2MXnslKltg%3D%3D10.1038/nn1387
W. Wu, H. Wu, B. Gao, P. Yao, X. Zhang, X. Peng, S. Yu, H. Qian, 2018 IEEE Symposium on VLSI Technology (Honolulu Hawai`i, June 18–22, 2018), p. 103
WangWCoviEMilozziAFarronatoMRicciSSbandatiCPedrettiGIelminiDAdv. Intell. Syst.20203200022410.1002/aisy.202000224
ParkMHLeeYHKimHJKimYJMoonTKimKDMuellerJKerschASchroederUMikolajickTAdv. Mater.20152718111:CAS:528:DC%2BC2MXlsVKnsL0%3D10.1002/adma.201404531
WooJLeeDKooYHwangHMicroelectron. Eng.2017182421:CAS:528:DC%2BC2sXhsVOhsr%2FL10.1016/j.mee.2017.09.001
XiZRuanJLiCZhengCWenZDaiJLiAWuDNat. Commun.20178152171:CAS:528:DC%2BC2sXnvFGmu7g%3D10.1038/ncomms15217
GkoupidenisPKoutsourasDAMalliarasGGNat. Commun.20178110.1038/ncomms154481:CAS:528:DC%2BC2sXnvFGmu7o%3D
XuWMinSYHwangHLeeTWSci. Adv.20162e150132610.1126/sciadv.15013261:CAS:528:DC%2BC2sXhslaksbrJ
BurkittANBiol. Cybern.20069511:STN:280:DC%2BD28zpsVSlug%3D%3D10.1007/s00422-006-0068-6
NovoselovKMishchenkoOACarvalhoOANetoACScience2016353aac94391:STN:280:DC%2BC2s3lvVCnsA%3D%3D10.1126/science.aac9439
BurrGWShelbyRMSebastianAKimSKimSSidlerSVirwaniKIshiiMNarayananPFumarolaAAdv. Phys. X2017289
M. Jerry, P.-Y. Chen, J. Zhang, P. Sharma, K. Ni, S. Yu, S. Datta, 2017 IEEE International Electron Devices Meeting (San Francisco, December 2–6, 2017), p. 6.2.1
LiXTangJZhangQGaoBYangJJSongSWuWZhangWYaoPDengNNat. Nanotechnol.2020157761:CAS:528:DC%2BB3cXht1Ontr3N10.1038/s41565-020-0722-5
OhnoTHasegawaTTsuruokaTTerabeKGimzewskiJKAonoMNat. Mater.2011105911:CAS:528:DC%2BC3MXotV2ju7w%3D10.1038/nmat3054
PeiJDengLSongSZhaoMZhangYWuSWangGZouZWuZHeWChenFDengNWuSWangYWuYYangZMaCLiGHanWLiHWuHZhaoRXieYShiLNature20195721061:CAS:528:DC%2BC1MXhsFShu7bF10.1038/s41586-019-1424-8
WangWWangMAmbrosiEBricalliALaudatoMSunZChenXIelminiDNat. Commun.201910811:CAS:528:DC%2BC1MXmvFSqs78%3D10.1038/s41467-018-07979-0
DuCCaiFZidanMAMaWLeeSHLuWDNat. Commun.20178220410.1038/s41467-017-02337-y1:CAS:528:DC%2BC1cXhtV2ntr%2FJ
S. Park, A. Sheri, J. Kim, J. Noh, J. Jang, M. Jeon, B. Lee, B.R. Lee, B.H. Lee, H. Hwang, 2013 IEEE International Electron Devices Meeting (Washington, DC, December 9–11, 2013), p. 25.6.1
WangZJoshiSSavel’evSEJiangHMidyaRLinPHuMGeNStrachanJPLiZNat. Mater.2017161011:CAS:528:DC%2BC28XhsFyms7bL10.1038/nmat4756
RaoFDingKZhouYZhengYXiaMLvSSongZFengSRonnebergerIMazzarelloRScience201735814231:CAS:528:DC%2BC2sXhvFGmtr%2FP10.1126/science.aao3212
DuanQJingZZouXWangYYangKZhangTWuSHuangRYangYNat. Commun.20201133991:CAS:528:DC%2BB3cXhtlKgur%2FJ10.1038/s41467-020-17215-3
ChangTJoS-HLuWACS Nano2011576691:CAS:528:DC%2BC3MXhtVylsb%2FN10.1021/nn202983n
J. Tang, D. Bishop, S. Kim, M. Copel, T. Gokmen, T. Todorov, S. Shin, K.-T. Lee, P. Solomon, K. Chan, 2018 IEEE International Electron Devices Meeting (San Francisco, December 1–5, 2018), p. 13.1.1
MahataCLeeCAnYKimM-HBangSKimCSRyuJ-HKimSKimHParkB-GJ. Alloys Compd.20208261544341:CAS:528:DC%2BB3cXktFCit7s%3D10.1016/j.jallcom.2020.154434
S. Kim, T. Todorov, M. Onen, T. Gokmen, D. Bishop, P. Solomon, K.-T. Lee, M. Copel, D.B. Farmer, J.A. Ott, 2019 IEEE International Electron Devices Meeting (San Francisco, December 7–11, 2019), p. 35.7.1
LiuYHuangYDuanXNature20195673231:CAS:528:DC%2BC1MXotFansrk%3D10.1038/s41586-019-1013-x
ZhangPLiCHuangTChenLChenYNeurocomputing20172224710.1016/j.neucom.2016.10.012
McCullochWSPittsWBull. Math. Biophys.1943511510.1007/BF02478259
BoahenKComput. Sci. Eng.2017191410.1109/MCSE.2017.33
D Silver (205_CR10) 2016; 529
H Wang (205_CR56) 2005; 8
C Li (205_CR12) 2017; 29
C Du (205_CR74) 2017; 8
M Davies (205_CR5) 2018; 38
AL Hodgkin (205_CR40) 1952; 117
G Srinivasan (205_CR60) 2016; 6
205_CR29
HG Manning (205_CR76) 2018; 9
Z Wang (205_CR64) 2020; 11
C Gong (205_CR82) 2019; 363
Y Li (205_CR59) 2014; 4
SB Furber (205_CR6) 2014; 102
T Tuma (205_CR25) 2016; 11
E Corti (205_CR42) 2021; 15
PA Merolla (205_CR4) 2014; 345
MA Zidan (205_CR11) 2018; 1
EJ Fuller (205_CR53) 2019; 364
DC Rubin (205_CR70) 1999; 25
AN Burkitt (205_CR22) 2006; 95
G Pedretti (205_CR73) 2017; 7
K Novoselov (205_CR80) 2016; 353
ER Kandel (205_CR21) 2013
Z Xi (205_CR36) 2017; 8
205_CR50
J Pei (205_CR7) 2019; 572
M Romera (205_CR44) 2018; 563
S Trenholm (205_CR19) 2014; 17
N Qiao (205_CR9) 2015; 9
205_CR55
C Mahata (205_CR57) 2020; 826
205_CR15
N Ilyas (205_CR67) 2020; 15
205_CR14
205_CR16
M Lavzin (205_CR20) 2012; 490
Y Liu (205_CR81) 2019; 567
K Boahen (205_CR2) 2017; 19
R Simpson (205_CR13) 2011; 6
S Dutta (205_CR43) 2019; 10
W Wang (205_CR37) 2019; 10
GW Burr (205_CR1) 2017; 2
S Boyn (205_CR61) 2017; 8
SH Jo (205_CR51) 2010; 10
AL Hodgkin (205_CR24) 1952; 116
P Gkoupidenis (205_CR45) 2017; 8
C Mead (205_CR3) 1990; 78
G Milano (205_CR77) 2020; 2
MH Park (205_CR79) 2015; 27
M Lee (205_CR41) 2020; 13
F Rao (205_CR34) 2017; 358
X Li (205_CR31) 2020; 15
205_CR48
205_CR47
205_CR49
cr-split#-205_CR17.1
W Xu (205_CR78) 2016; 2
cr-split#-205_CR17.2
JP Pfister (205_CR62) 2006; 26
P Huang (205_CR66) 2019; 1
205_CR8
K Roy (205_CR18) 2019; 575
J Woo (205_CR26) 2017; 182
T Ohno (205_CR68) 2011; 10
LN Cooper (205_CR65) 2012; 13
T Chang (205_CR69) 2011; 5
Y Li (205_CR52) 2020; 32
K-C Chuang (205_CR46) 2019; 7
MD Pickett (205_CR27) 2013; 12
H Mulaosmanovic (205_CR30) 2018; 10
205_CR39
Z Wang (205_CR33) 2017; 16
J Gjorgjieva (205_CR63) 2011; 108
Y Lin (205_CR58) 2018; 4
H Wu (205_CR32) 2017; 105
Q Duan (205_CR38) 2020; 11
Z Wang (205_CR28) 2018; 1
GW Burr (205_CR54) 2015; 62
W Wang (205_CR75) 2020; 3
ML Schneider (205_CR35) 2018; 4
P Zhang (205_CR71) 2017; 222
WS McCulloch (205_CR23) 1943; 5
R Berdan (205_CR72) 2016; 6
References_xml – reference: BerdanRVasilakiEKhiatAIndiveriGSerbAProdromakisTSci. Rep.20166186391:CAS:528:DC%2BC28XjslSgtA%3D%3D10.1038/srep18639
– reference: FurberSBGalluppiFTempleSPlanaLAProc. IEEE201410265210.1109/JPROC.2014.2304638
– reference: WangZJoshiSSavel’evSSongWMidyaRLiYRaoMYanPAsapuSZhuoYNat. Electron.2018113710.1038/s41928-018-0023-2
– reference: ParkMHLeeYHKimHJKimYJMoonTKimKDMuellerJKerschASchroederUMikolajickTAdv. Mater.20152718111:CAS:528:DC%2BC2MXlsVKnsL0%3D10.1002/adma.201404531
– reference: HodgkinALHuxleyAFJ. Physiol.19521164731:STN:280:DyaG38%2Fns1yhtg%3D%3D10.1113/jphysiol.1952.sp004718
– reference: ChuangK-CChuC-YZhangH-XLuoJ-DLiW-SLiY-SChengH-CIEEE J. Electron Dev. Soc.201975891:CAS:528:DC%2BB3cXotlenuw%3D%3D10.1109/JEDS.2019.2915975
– reference: LavzinMRapoportSPolskyAGarionLSchillerJNature20124903971:CAS:528:DC%2BC38Xht1ynt7jJ10.1038/nature11451
– reference: WangHNat Neurosci.200581871:CAS:528:DC%2BD2MXnslKltg%3D%3D10.1038/nn1387
– reference: M.-H. Wu, M.-C. Hong, C.-C. Chang, P. Sahu, J.-H. Wei, H.-Y. Lee, S.-S. Sheu, T.-H. Hou, 2019 Symposium on VLSI Technology (IEEE, Kyoto, Japan, June 9–14, 2019), p. T34
– reference: WangZJoshiSSavel’evSEJiangHMidyaRLinPHuMGeNStrachanJPLiZNat. Mater.2017161011:CAS:528:DC%2BC28XhsFyms7bL10.1038/nmat4756
– reference: RoyKJaiswalAPandaPNature20195756071:CAS:528:DC%2BC1MXit1OhsrrP10.1038/s41586-019-1677-2
– reference: SchneiderMLDonnellyCARussekSEBaekBPufallMRHopkinsPFDresselhausPDBenzSPRippardWHSci. Adv.20184e170132910.1126/sciadv.1701329
– reference: XiZRuanJLiCZhengCWenZDaiJLiAWuDNat. Commun.20178152171:CAS:528:DC%2BC2sXnvFGmu7g%3D10.1038/ncomms15217
– reference: DuanQJingZZouXWangYYangKZhangTWuSHuangRYangYNat. Commun.20201133991:CAS:528:DC%2BB3cXhtlKgur%2FJ10.1038/s41467-020-17215-3
– reference: CooperLNBearMFNat. Rev. Neurosci.2012137981:CAS:528:DC%2BC38XhsFeqsrzL10.1038/nrn3353
– reference: SimpsonRFonsPKolobovAFukayaTKrbalMYagiTTominagaJNat. Nanotechnol.201165011:CAS:528:DC%2BC3MXotlCktL4%3D10.1038/nnano.2011.96
– reference: W. Wu, H. Wu, B. Gao, P. Yao, X. Zhang, X. Peng, S. Yu, H. Qian, 2018 IEEE Symposium on VLSI Technology (Honolulu Hawai`i, June 18–22, 2018), p. 103
– reference: McCullochWSPittsWBull. Math. Biophys.1943511510.1007/BF02478259
– reference: M. Jerry, P.-Y. Chen, J. Zhang, P. Sharma, K. Ni, S. Yu, S. Datta, 2017 IEEE International Electron Devices Meeting (San Francisco, December 2–6, 2017), p. 6.2.1
– reference: MahataCLeeCAnYKimM-HBangSKimCSRyuJ-HKimSKimHParkB-GJ. Alloys Compd.20208261544341:CAS:528:DC%2BB3cXktFCit7s%3D10.1016/j.jallcom.2020.154434
– reference: LiXTangJZhangQGaoBYangJJSongSWuWZhangWYaoPDengNNat. Nanotechnol.2020157761:CAS:528:DC%2BB3cXht1Ontr3N10.1038/s41565-020-0722-5
– reference: LiYFullerEJSugarJDYooSAshbyDSBennettCHHortonRDBartschMSMarinellaMJLuWDTalinAAAdv. Mater.20203220039841:CAS:528:DC%2BB3cXhvFSisLnM10.1002/adma.202003984
– reference: TrenholmSMcLaughlinAJSchwabDJTurnerMHSmithRGRiekeFAwatramaniGBNat. Neurosci.20141717591:CAS:528:DC%2BC2cXhvVSqsbnK10.1038/nn.3851
– reference: RomeraMTalatchianPTsunegiSAraujoFACrosVBortolottiPTrastoyJYakushijiKFukushimaAKubotaHYuasaSErnoultMVodenicarevicDHirtzlinTLocatelliNQuerliozDGrollierJNature20185632301:CAS:528:DC%2BC1cXitVCitL7F10.1038/s41586-018-0632-y
– reference: S. Kim, T. Todorov, M. Onen, T. Gokmen, D. Bishop, P. Solomon, K.-T. Lee, M. Copel, D.B. Farmer, J.A. Ott, 2019 IEEE International Electron Devices Meeting (San Francisco, December 7–11, 2019), p. 35.7.1
– reference: S. Dünkel, M. Trentzsch, R. Richter, P. Moll, C. Fuchs, O. Gehring, M. Majer, S. Wittek, B. Müller, T. Melde, 2017 IEEE International Electron Devices Meeting (San Francisco, December 2–6, 2017), p. 19.7.1
– reference: GjorgjievaJClopathCAudetJPfisterJPProc. Natl. Acad. Sci. U.S.A.2011108193831:CAS:528:DC%2BC3MXhs1eitb7K10.1073/pnas.1105933108
– reference: DuCCaiFZidanMAMaWLeeSHLuWDNat. Commun.20178220410.1038/s41467-017-02337-y1:CAS:528:DC%2BC1cXhtV2ntr%2FJ
– reference: CortiEJimenezJACNiangKMRobertsonJMoselundKEGotsmannBIonescuAMKargSFront. Neuro. Sci.20211519
– reference: GkoupidenisPKoutsourasDAMalliarasGGNat. Commun.20178110.1038/ncomms154481:CAS:528:DC%2BC2sXnvFGmu7o%3D
– reference: S. Yu, P.-Y. Chen, Y. Cao, L. Xia, Y. Wang, H. Wu, 2015 IEEE International Electron Devices Meeting (Washington, DC, December 7–9, 2015), p. 17.3.1
– reference: LiYZhongYZhangJXuLWangQSunHTongHChengXMiaoXSci. Rep.2014449061:CAS:528:DC%2BC2MXktlOntbg%3D10.1038/srep04906
– reference: SrinivasanGSenguptaARoyKSci. Rep.20166295451:CAS:528:DC%2BC2sXksVektbc%3D10.1038/srep29545
– reference: FullerEJKeeneSTMelianasAWangZAgarwalSLiYTuchmanYJamesCDMarinellaMJYangJJScience20193645701:CAS:528:DC%2BC1MXptFalur0%3D10.1126/science.aaw5581
– reference: HodgkinALHuxleyAFJ. Phys.19521175001:STN:280:DyaG3s%2FhsFGjug%3D%3D
– reference: GongCZhangXScience2019363eaav44501:CAS:528:DC%2BC1MXivVOis74%3D10.1126/science.aav4450
– reference: NovoselovKMishchenkoOACarvalhoOANetoACScience2016353aac94391:STN:280:DC%2BC2s3lvVCnsA%3D%3D10.1126/science.aac9439
– reference: J. Tang, D. Bishop, S. Kim, M. Copel, T. Gokmen, T. Todorov, S. Shin, K.-T. Lee, P. Solomon, K. Chan, 2018 IEEE International Electron Devices Meeting (San Francisco, December 1–5, 2018), p. 13.1.1
– reference: RubinDCHintonSWenzelAJ. Exp. Psychol. Learn. Mem. Cogn.199925116110.1037/0278-7393.25.5.1161
– reference: BurrGWShelbyRMSebastianAKimSKimSSidlerSVirwaniKIshiiMNarayananPFumarolaAAdv. Phys. X2017289
– reference: S. Santurkar, B. Rajendran, 2015 International Joint Conference on Neural Networks (IJCNN) (IEEE, Killarney, Ireland, July 12–17, 2015), p. 1
– reference: HuangPLiZDongZHanRZhouZZhuDLiuLLiuXKangJACS Appl. Electron. Mater.201918451:CAS:528:DC%2BC1MXpvFKmsL8%3D10.1021/acsaelm.9b00011
– reference: OhnoTHasegawaTTsuruokaTTerabeKGimzewskiJKAonoMNat. Mater.2011105911:CAS:528:DC%2BC3MXotV2ju7w%3D10.1038/nmat3054
– reference: ManningHGNiosiFda RochaCGBellewATO’CallaghanCBiswasSFlowersPFWileyBJHolmesJDFerreiraMSBolandJJNat. Commun.20189321910.1038/s41467-018-05517-61:CAS:528:DC%2BC1cXhsFart7bJ
– reference: BurkittANBiol. Cybern.20069511:STN:280:DC%2BD28zpsVSlug%3D%3D10.1007/s00422-006-0068-6
– reference: S. Choudhary, S. Sloan, S. Fok, A. Neckar, E. Trautmann, P. Gao, T. Stewart, C. Eliasmith, K. Boahen, 2012 International Conference on Artificial Neural Networks (Springer, Berlin, Germany, 2012), p. 121
– reference: WuHWangXHGaoBDengNLuZHauknessBBronnerGQianHProc. IEEE201710517701:CAS:528:DC%2BC1cXntlOqtbk%3D10.1109/JPROC.2017.2684830
– reference: WangWWangMAmbrosiEBricalliALaudatoMSunZChenXIelminiDNat. Commun.201910811:CAS:528:DC%2BC1MXmvFSqs78%3D10.1038/s41467-018-07979-0
– reference: PfisterJPGerstnerWJ. Neurosci.20062696731:CAS:528:DC%2BD28XhtVCgu7jJ10.1523/JNEUROSCI.1425-06.2006
– reference: LiCGaoBYaoYGuanXShenXWangYHuangPLiuLLiuXLiJAdv. Mater.201729160297610.1002/adma.2016029761:CAS:528:DC%2BC2sXpsVOksQ%3D%3D
– reference: TumaTPantaziALe GalloMSebastianAEleftheriouENat. Nanotechnol.2016116931:CAS:528:DC%2BC28XotV2nt74%3D10.1038/nnano.2016.70
– reference: DuttaSPariharAKhannaAGomezJDattaSNat. Commun.201910329910.1038/s41467-019-11198-61:CAS:528:DC%2BC1MXhsVeks73K
– reference: WangWCoviEMilozziAFarronatoMRicciSSbandatiCPedrettiGIelminiDAdv. Intell. Syst.20203200022410.1002/aisy.202000224
– reference: IlyasNLiDLiCJiangXJiangYLiWNano. Res. Lett.202015301:CAS:528:DC%2BB3cXjsF2iurw%3D10.1186/s11671-020-3249-7
– reference: PickettMDMedeiros-RibeiroGWilliamsRSNat. Mater.2013121141:CAS:528:DC%2BC38XhvVersr%2FP10.1038/nmat3510
– reference: BurrGWShelbyRMSidlerSdi NolfoCJangJBoybatIShenoyRSNarayananPVirwaniKGiacomettiEUKurdiBNHwangHIEEE Trans. Electron Devices201562349810.1109/TED.2015.2439635
– reference: XuWMinSYHwangHLeeTWSci. Adv.20162e150132610.1126/sciadv.15013261:CAS:528:DC%2BC2sXhslaksbrJ
– reference: KandelERSchwartzJHJessellTMSiegelbaumSAHudspethAJPrinciples of Neural Science20135Columbia, MDCenveo Publisher Services
– reference: JoSHChangTEbongIBhadviyaBBMazumderPLuWNano Lett.20101012971:CAS:528:DC%2BC3cXisFGnu7k%3D10.1021/nl904092h
– reference: LinYZengTXuHWangZZhaoXLiuWMaJLiuYAdv. Electron. Mater.20184187005610.1002/aelm.2018700561:CAS:528:DC%2BC1cXisVKqs73F
– reference: PeiJDengLSongSZhaoMZhangYWuSWangGZouZWuZHeWChenFDengNWuSWangYWuYYangZMaCLiGHanWLiHWuHZhaoRXieYShiLNature20195721061:CAS:528:DC%2BC1MXhsFShu7bF10.1038/s41586-019-1424-8
– reference: S. Park, A. Sheri, J. Kim, J. Noh, J. Jang, M. Jeon, B. Lee, B.R. Lee, B.H. Lee, H. Hwang, 2013 IEEE International Electron Devices Meeting (Washington, DC, December 9–11, 2013), p. 25.6.1
– reference: SilverDHuangAMaddisonCJGuezASifreLvan den DriesscheGSchrittwieserJAntonoglouIPanneershelvamVLanctotMDielemanSGreweDNhamJKalchbrennerNSutskeverILillicrapTLeachMKavukcuogluKGraepelTHassabisDNature20165294841:CAS:528:DC%2BC28Xhs12is7w%3D10.1038/nature16961
– reference: BoahenKComput. Sci. Eng.2017191410.1109/MCSE.2017.33
– reference: MeadCProc. IEEE199078162910.1109/5.58356
– reference: BoynSGrollierJLecerfGXuBLocatelliNFusilSGirodSCarrétéroCGarciaKXavierSTomasJBellaicheLBibesMBarthélémyASaïghiSGarciaVNat. Commun.20178147361:CAS:528:DC%2BC2sXls1KhtLc%3D10.1038/ncomms14736
– reference: LiuYHuangYDuanXNature20195673231:CAS:528:DC%2BC1MXotFansrk%3D10.1038/s41586-019-1013-x
– reference: RaoFDingKZhouYZhengYXiaMLvSSongZFengSRonnebergerIMazzarelloRScience201735814231:CAS:528:DC%2BC2sXhvFGmtr%2FP10.1126/science.aao3212
– reference: C.-W. Hsu, C.-C. Wan, I.-T. Wang, M.-C. Chen, C.-L. Lo, Y.-J. Lee, W.-Y. Jang, C.-H. Lin, T.-H. Hou, 2013 IEEE International Electron Devices Meeting (Washington, DC, December 9–11, 2013), p. 10.4.1
– reference: MulaosmanovicHChiccaEBerteleMMikolajickTSlesazeckSNanoscale201810217551:CAS:528:DC%2BC1cXitVGks7nL10.1039/C8NR07135G
– reference: LeeMChoSWKimSJKwakJYJuHYiYCheongB-KLeeSPhys. Rev. Appl.2020130640561:CAS:528:DC%2BB3cXhsFCiur7O10.1103/PhysRevApplied.13.064056
– reference: ChangTJoS-HLuWACS Nano2011576691:CAS:528:DC%2BC3MXhtVylsb%2FN10.1021/nn202983n
– reference: QiaoNMostafaHCorradiFOsswaldMStefaniniFSumislawskaDIndiveriGFront. Neuro. Sci.20159141
– reference: MilanoGPedrettiGFrettoMBoarinoLBenfenatiFIelminiDValovIRicciardiCAdv. Intell. Syst.20202200009610.1002/aisy.202000096
– reference: ZhangPLiCHuangTChenLChenYNeurocomputing20172224710.1016/j.neucom.2016.10.012
– reference: ZidanMAStrachanJPLuWDNat. Electron.201812210.1038/s41928-017-0006-8
– reference: DaviesMSrinivasaNLinT-HChinyaGCaoYChodaySHDimouGJoshiPImamNJainSLiaoYLinC-KLinesALiuRMathaikuttyDMcCoySPaulATseJVenkataramananGWengY-HWildAYangYWangHIEEE Micro2018388210.1109/MM.2018.112130359
– reference: PedrettiGMiloVAmbrogioSCarboniRBianchiSCalderoniARamaswamyNSpinelliAIelminiDSci. Rep.2017752881:STN:280:DC%2BC1cjnsVaqsg%3D%3D10.1038/s41598-017-05480-0
– reference: WangZZengTRenYLinYXuHZhaoXLiuYIelminiDNat. Commun.20201115101:CAS:528:DC%2BB3cXlvFCqu7c%3D10.1038/s41467-020-15158-3
– reference: WooJLeeDKooYHwangHMicroelectron. Eng.2017182421:CAS:528:DC%2BC2sXhsVOhsr%2FL10.1016/j.mee.2017.09.001
– reference: MerollaPAArthurJVAlvarez-IcazaRCassidyASSawadaJAkopyanFJacksonBLImamNGuoCNakamuraYScience20143456681:CAS:528:DC%2BC2cXht12gtLbN10.1126/science.1254642
– volume: 6
  start-page: 501
  year: 2011
  ident: 205_CR13
  publication-title: Nat. Nanotechnol.
  doi: 10.1038/nnano.2011.96
– volume: 364
  start-page: 570
  year: 2019
  ident: 205_CR53
  publication-title: Science
  doi: 10.1126/science.aaw5581
– volume: 7
  start-page: 5288
  year: 2017
  ident: 205_CR73
  publication-title: Sci. Rep.
  doi: 10.1038/s41598-017-05480-0
– volume: 13
  start-page: 064056
  year: 2020
  ident: 205_CR41
  publication-title: Phys. Rev. Appl.
  doi: 10.1103/PhysRevApplied.13.064056
– volume: 8
  start-page: 2204
  year: 2017
  ident: 205_CR74
  publication-title: Nat. Commun.
  doi: 10.1038/s41467-017-02337-y
– volume: 575
  start-page: 607
  year: 2019
  ident: 205_CR18
  publication-title: Nature
  doi: 10.1038/s41586-019-1677-2
– volume: 6
  start-page: 18639
  year: 2016
  ident: 205_CR72
  publication-title: Sci. Rep.
  doi: 10.1038/srep18639
– volume: 1
  start-page: 137
  year: 2018
  ident: 205_CR28
  publication-title: Nat. Electron.
  doi: 10.1038/s41928-018-0023-2
– ident: 205_CR29
– volume: 563
  start-page: 230
  year: 2018
  ident: 205_CR44
  publication-title: Nature
  doi: 10.1038/s41586-018-0632-y
– volume: 8
  start-page: 15217
  year: 2017
  ident: 205_CR36
  publication-title: Nat. Commun.
  doi: 10.1038/ncomms15217
– volume: 10
  start-page: 81
  year: 2019
  ident: 205_CR37
  publication-title: Nat. Commun.
  doi: 10.1038/s41467-018-07979-0
– volume: 7
  start-page: 589
  year: 2019
  ident: 205_CR46
  publication-title: IEEE J. Electron Dev. Soc.
  doi: 10.1109/JEDS.2019.2915975
– ident: #cr-split#-205_CR17.1
– volume: 11
  start-page: 3399
  year: 2020
  ident: 205_CR38
  publication-title: Nat. Commun.
  doi: 10.1038/s41467-020-17215-3
– volume: 4
  start-page: 1870056
  year: 2018
  ident: 205_CR58
  publication-title: Adv. Electron. Mater.
  doi: 10.1002/aelm.201870056
– volume: 17
  start-page: 1759
  year: 2014
  ident: 205_CR19
  publication-title: Nat. Neurosci.
  doi: 10.1038/nn.3851
– volume: 32
  start-page: 2003984
  year: 2020
  ident: 205_CR52
  publication-title: Adv. Mater.
  doi: 10.1002/adma.202003984
– volume: 6
  start-page: 29545
  year: 2016
  ident: 205_CR60
  publication-title: Sci. Rep.
  doi: 10.1038/srep29545
– volume: 13
  start-page: 798
  year: 2012
  ident: 205_CR65
  publication-title: Nat. Rev. Neurosci.
  doi: 10.1038/nrn3353
– volume: 62
  start-page: 3498
  year: 2015
  ident: 205_CR54
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/TED.2015.2439635
– volume: 26
  start-page: 9673
  year: 2006
  ident: 205_CR62
  publication-title: J. Neurosci.
  doi: 10.1523/JNEUROSCI.1425-06.2006
– volume: 572
  start-page: 106
  year: 2019
  ident: 205_CR7
  publication-title: Nature
  doi: 10.1038/s41586-019-1424-8
– ident: 205_CR15
– volume: 102
  start-page: 652
  year: 2014
  ident: 205_CR6
  publication-title: Proc. IEEE
  doi: 10.1109/JPROC.2014.2304638
– volume: 8
  start-page: 187
  year: 2005
  ident: 205_CR56
  publication-title: Nat Neurosci.
  doi: 10.1038/nn1387
– volume: 12
  start-page: 114
  year: 2013
  ident: 205_CR27
  publication-title: Nat. Mater.
  doi: 10.1038/nmat3510
– volume: 10
  start-page: 3299
  year: 2019
  ident: 205_CR43
  publication-title: Nat. Commun.
  doi: 10.1038/s41467-019-11198-6
– volume: 345
  start-page: 668
  year: 2014
  ident: 205_CR4
  publication-title: Science
  doi: 10.1126/science.1254642
– ident: 205_CR8
  doi: 10.1007/978-3-642-33269-2_16
– ident: 205_CR47
– volume: 25
  start-page: 1161
  year: 1999
  ident: 205_CR70
  publication-title: J. Exp. Psychol. Learn. Mem. Cogn.
  doi: 10.1037/0278-7393.25.5.1161
– volume: 9
  start-page: 3219
  year: 2018
  ident: 205_CR76
  publication-title: Nat. Commun.
  doi: 10.1038/s41467-018-05517-6
– volume: 222
  start-page: 47
  year: 2017
  ident: 205_CR71
  publication-title: Neurocomputing
  doi: 10.1016/j.neucom.2016.10.012
– volume: 4
  start-page: e1701329
  year: 2018
  ident: 205_CR35
  publication-title: Sci. Adv.
  doi: 10.1126/sciadv.1701329
– ident: #cr-split#-205_CR17.2
– volume: 105
  start-page: 1770
  year: 2017
  ident: 205_CR32
  publication-title: Proc. IEEE
  doi: 10.1109/JPROC.2017.2684830
– volume: 8
  start-page: 14736
  year: 2017
  ident: 205_CR61
  publication-title: Nat. Commun.
  doi: 10.1038/ncomms14736
– volume: 8
  start-page: 1
  year: 2017
  ident: 205_CR45
  publication-title: Nat. Commun.
  doi: 10.1038/ncomms15448
– volume: 182
  start-page: 42
  year: 2017
  ident: 205_CR26
  publication-title: Microelectron. Eng.
  doi: 10.1016/j.mee.2017.09.001
– volume: 10
  start-page: 21755
  year: 2018
  ident: 205_CR30
  publication-title: Nanoscale
  doi: 10.1039/C8NR07135G
– volume: 5
  start-page: 7669
  year: 2011
  ident: 205_CR69
  publication-title: ACS Nano
  doi: 10.1021/nn202983n
– volume: 19
  start-page: 14
  year: 2017
  ident: 205_CR2
  publication-title: Comput. Sci. Eng.
  doi: 10.1109/MCSE.2017.33
– volume: 353
  start-page: aac9439
  year: 2016
  ident: 205_CR80
  publication-title: Science
  doi: 10.1126/science.aac9439
– volume: 9
  start-page: 141
  year: 2015
  ident: 205_CR9
  publication-title: Front. Neuro. Sci.
– ident: 205_CR16
– ident: 205_CR50
– volume: 95
  start-page: 1
  year: 2006
  ident: 205_CR22
  publication-title: Biol. Cybern.
  doi: 10.1007/s00422-006-0068-6
– volume: 358
  start-page: 1423
  year: 2017
  ident: 205_CR34
  publication-title: Science
  doi: 10.1126/science.aao3212
– volume: 4
  start-page: 4906
  year: 2014
  ident: 205_CR59
  publication-title: Sci. Rep.
  doi: 10.1038/srep04906
– volume: 2
  start-page: e1501326
  year: 2016
  ident: 205_CR78
  publication-title: Sci. Adv.
  doi: 10.1126/sciadv.1501326
– volume: 38
  start-page: 82
  year: 2018
  ident: 205_CR5
  publication-title: IEEE Micro
  doi: 10.1109/MM.2018.112130359
– volume: 11
  start-page: 693
  year: 2016
  ident: 205_CR25
  publication-title: Nat. Nanotechnol.
  doi: 10.1038/nnano.2016.70
– volume: 1
  start-page: 845
  year: 2019
  ident: 205_CR66
  publication-title: ACS Appl. Electron. Mater.
  doi: 10.1021/acsaelm.9b00011
– volume: 2
  start-page: 89
  year: 2017
  ident: 205_CR1
  publication-title: Adv. Phys. X
– ident: 205_CR48
  doi: 10.1109/IEDM.2013.6724601
– volume: 529
  start-page: 484
  year: 2016
  ident: 205_CR10
  publication-title: Nature
  doi: 10.1038/nature16961
– ident: 205_CR55
– volume: 2
  start-page: 2000096
  year: 2020
  ident: 205_CR77
  publication-title: Adv. Intell. Syst.
  doi: 10.1002/aisy.202000096
– volume: 11
  start-page: 1510
  year: 2020
  ident: 205_CR64
  publication-title: Nat. Commun.
  doi: 10.1038/s41467-020-15158-3
– volume: 15
  start-page: 30
  year: 2020
  ident: 205_CR67
  publication-title: Nano. Res. Lett.
  doi: 10.1186/s11671-020-3249-7
– volume: 567
  start-page: 323
  year: 2019
  ident: 205_CR81
  publication-title: Nature
  doi: 10.1038/s41586-019-1013-x
– volume: 5
  start-page: 115
  year: 1943
  ident: 205_CR23
  publication-title: Bull. Math. Biophys.
  doi: 10.1007/BF02478259
– volume: 1
  start-page: 22
  year: 2018
  ident: 205_CR11
  publication-title: Nat. Electron.
  doi: 10.1038/s41928-017-0006-8
– volume: 29
  start-page: 1602976
  year: 2017
  ident: 205_CR12
  publication-title: Adv. Mater.
  doi: 10.1002/adma.201602976
– volume-title: Principles of Neural Science
  year: 2013
  ident: 205_CR21
– volume: 3
  start-page: 2000224
  year: 2020
  ident: 205_CR75
  publication-title: Adv. Intell. Syst.
  doi: 10.1002/aisy.202000224
– volume: 78
  start-page: 1629
  year: 1990
  ident: 205_CR3
  publication-title: Proc. IEEE
  doi: 10.1109/5.58356
– volume: 363
  start-page: eaav4450
  year: 2019
  ident: 205_CR82
  publication-title: Science
  doi: 10.1126/science.aav4450
– ident: 205_CR49
– volume: 10
  start-page: 1297
  year: 2010
  ident: 205_CR51
  publication-title: Nano Lett.
  doi: 10.1021/nl904092h
– volume: 116
  start-page: 473
  year: 1952
  ident: 205_CR24
  publication-title: J. Physiol.
  doi: 10.1113/jphysiol.1952.sp004718
– volume: 108
  start-page: 19383
  year: 2011
  ident: 205_CR63
  publication-title: Proc. Natl. Acad. Sci. U.S.A.
  doi: 10.1073/pnas.1105933108
– volume: 826
  start-page: 154434
  year: 2020
  ident: 205_CR57
  publication-title: J. Alloys Compd.
  doi: 10.1016/j.jallcom.2020.154434
– volume: 117
  start-page: 500
  year: 1952
  ident: 205_CR40
  publication-title: J. Phys.
– volume: 15
  start-page: 776
  year: 2020
  ident: 205_CR31
  publication-title: Nat. Nanotechnol.
  doi: 10.1038/s41565-020-0722-5
– volume: 27
  start-page: 1811
  year: 2015
  ident: 205_CR79
  publication-title: Adv. Mater.
  doi: 10.1002/adma.201404531
– volume: 16
  start-page: 101
  year: 2017
  ident: 205_CR33
  publication-title: Nat. Mater.
  doi: 10.1038/nmat4756
– volume: 15
  start-page: 19
  year: 2021
  ident: 205_CR42
  publication-title: Front. Neuro. Sci.
– volume: 10
  start-page: 591
  year: 2011
  ident: 205_CR68
  publication-title: Nat. Mater.
  doi: 10.1038/nmat3054
– volume: 490
  start-page: 397
  year: 2012
  ident: 205_CR20
  publication-title: Nature
  doi: 10.1038/nature11451
– ident: 205_CR14
– ident: 205_CR39
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Snippet Inspired by the working principles of the human brain, neuromorphic computing shows great potential in executing cognitive tasks such as learning and...
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SubjectTerms Applied and Technical Physics
Brain
Characterization and Evaluation of Materials
Chemistry and Materials Science
Circuits
Cognitive tasks
Energy consumption
Energy Materials
Hardware
Materials Engineering
Materials Science
Nanotechnology
Neuromorphic computing
Review Article
Synapses
Title Materials challenges and opportunities for brain-inspired computing
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