Lomonaco, J., Rostand, N., Martinie, S., Charbonnier, G., Marcandella, C., Bedecarrats, T., & Bournel, A. (2025). Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology. IEEE transactions on nuclear science, 72(4), 1276-1284. https://doi.org/10.1109/TNS.2025.3531687
Citácia podle Chicago (17th ed.)Lomonaco, J., N. Rostand, S. Martinie, G. Charbonnier, C. Marcandella, T. Bedecarrats, a A. Bournel. "Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology." IEEE Transactions on Nuclear Science 72, no. 4 (2025): 1276-1284. https://doi.org/10.1109/TNS.2025.3531687.
Citácia podľa MLA (8th ed.)Lomonaco, J., et al. "Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology." IEEE Transactions on Nuclear Science, vol. 72, no. 4, 2025, pp. 1276-1284, https://doi.org/10.1109/TNS.2025.3531687.