Boosting the Electrical Double‐Layer Capacitance of Graphene by Self‐Doped Defects through Ball‐Milling

Improving the capacitance of carbon materials for supercapacitors without sacrificing their rate performance, especially volumetric capacitance at high mass loadings, is a big challenge because of the limited assessable surface area and sluggish electrochemical kinetics of the pseudocapacitive react...

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Vydáno v:	Advanced functional materials Ročník 29; číslo 24
Hlavní autoři:	Dong, Yue, Zhang, Su, Du, Xian, Hong, Song, Zhao, Shengna, Chen, Yaxin, Chen, Xiaohong, Song, Huaihe
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Hoboken Wiley Subscription Services, Inc 01.06.2019
Témata:	Capacitance Carbon Chemical reactions defective graphene block Defects Doping double‐layer capacitance Energy storage Graphene Gravimetry Materials science Packing density Reaction kinetics self‐doping Surface area volumetric capacitance
ISSN:	1616-301X, 1616-3028
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Abstract	Improving the capacitance of carbon materials for supercapacitors without sacrificing their rate performance, especially volumetric capacitance at high mass loadings, is a big challenge because of the limited assessable surface area and sluggish electrochemical kinetics of the pseudocapacitive reactions. Here, it is demonstrated that “self‐doping” defects in carbon materials can contribute to additional capacitance with an electrical double‐layer behavior, thus promoting a significant increase in the specific capacitance. As an exemplification, a novel defect‐enriched graphene block with a low specific surface area of 29.7 m2 g−1 and high packing density of 0.917 g cm−3 performs high gravimetric, volumetric, and areal capacitances of 235 F g−1, 215 F cm−3, and 3.95 F cm−2 (mass loading of 22 mg cm−2) at 1 A g−1, respectively, as well as outstanding rate performance. The resulting specific areal capacitance reaches an ultrahigh value of 7.91 F m−2 including a “self‐doping” defect contribution of 4.81 F m−2, which is dramatically higher than the theoretical capacitance of graphene (0.21 F m−2) and most of the reported carbon‐based materials. Therefore, the defect engineering route broadens the avenue to further improve the capacitive performance of carbon materials, especially for compact energy storage under limited surface areas. Owing to the significantly improved double‐layer capacitance originating from the “self‐doping” defects, defective graphene blocks with high defect density (ID/IG = 2.16), high packing density (0.917 g cm–3), and low specific surface area (29.7 m2 g–1) show an integration of high gravimetric, volumetric, and areal capacitances for supercapacitors.
AbstractList	Improving the capacitance of carbon materials for supercapacitors without sacrificing their rate performance, especially volumetric capacitance at high mass loadings, is a big challenge because of the limited assessable surface area and sluggish electrochemical kinetics of the pseudocapacitive reactions. Here, it is demonstrated that “self‐doping” defects in carbon materials can contribute to additional capacitance with an electrical double‐layer behavior, thus promoting a significant increase in the specific capacitance. As an exemplification, a novel defect‐enriched graphene block with a low specific surface area of 29.7 m2 g−1 and high packing density of 0.917 g cm−3 performs high gravimetric, volumetric, and areal capacitances of 235 F g−1, 215 F cm−3, and 3.95 F cm−2 (mass loading of 22 mg cm−2) at 1 A g−1, respectively, as well as outstanding rate performance. The resulting specific areal capacitance reaches an ultrahigh value of 7.91 F m−2 including a “self‐doping” defect contribution of 4.81 F m−2, which is dramatically higher than the theoretical capacitance of graphene (0.21 F m−2) and most of the reported carbon‐based materials. Therefore, the defect engineering route broadens the avenue to further improve the capacitive performance of carbon materials, especially for compact energy storage under limited surface areas. Owing to the significantly improved double‐layer capacitance originating from the “self‐doping” defects, defective graphene blocks with high defect density (ID/IG = 2.16), high packing density (0.917 g cm–3), and low specific surface area (29.7 m2 g–1) show an integration of high gravimetric, volumetric, and areal capacitances for supercapacitors. Improving the capacitance of carbon materials for supercapacitors without sacrificing their rate performance, especially volumetric capacitance at high mass loadings, is a big challenge because of the limited assessable surface area and sluggish electrochemical kinetics of the pseudocapacitive reactions. Here, it is demonstrated that “self‐doping” defects in carbon materials can contribute to additional capacitance with an electrical double‐layer behavior, thus promoting a significant increase in the specific capacitance. As an exemplification, a novel defect‐enriched graphene block with a low specific surface area of 29.7 m 2 g −1 and high packing density of 0.917 g cm −3 performs high gravimetric, volumetric, and areal capacitances of 235 F g −1 , 215 F cm −3 , and 3.95 F cm −2 (mass loading of 22 mg cm −2 ) at 1 A g −1 , respectively, as well as outstanding rate performance. The resulting specific areal capacitance reaches an ultrahigh value of 7.91 F m −2 including a “self‐doping” defect contribution of 4.81 F m −2 , which is dramatically higher than the theoretical capacitance of graphene (0.21 F m −2 ) and most of the reported carbon‐based materials. Therefore, the defect engineering route broadens the avenue to further improve the capacitive performance of carbon materials, especially for compact energy storage under limited surface areas. Improving the capacitance of carbon materials for supercapacitors without sacrificing their rate performance, especially volumetric capacitance at high mass loadings, is a big challenge because of the limited assessable surface area and sluggish electrochemical kinetics of the pseudocapacitive reactions. Here, it is demonstrated that “self‐doping” defects in carbon materials can contribute to additional capacitance with an electrical double‐layer behavior, thus promoting a significant increase in the specific capacitance. As an exemplification, a novel defect‐enriched graphene block with a low specific surface area of 29.7 m2 g−1 and high packing density of 0.917 g cm−3 performs high gravimetric, volumetric, and areal capacitances of 235 F g−1, 215 F cm−3, and 3.95 F cm−2 (mass loading of 22 mg cm−2) at 1 A g−1, respectively, as well as outstanding rate performance. The resulting specific areal capacitance reaches an ultrahigh value of 7.91 F m−2 including a “self‐doping” defect contribution of 4.81 F m−2, which is dramatically higher than the theoretical capacitance of graphene (0.21 F m−2) and most of the reported carbon‐based materials. Therefore, the defect engineering route broadens the avenue to further improve the capacitive performance of carbon materials, especially for compact energy storage under limited surface areas.
Author	Chen, Yaxin Song, Huaihe Chen, Xiaohong Zhang, Su Du, Xian Dong, Yue Hong, Song Zhao, Shengna
Author_xml	– sequence: 1 givenname: Yue surname: Dong fullname: Dong, Yue organization: Beijing Key Laboratory of Electrochemical Process and Technology for Materials – sequence: 2 givenname: Su surname: Zhang fullname: Zhang, Su organization: Xinjiang University – sequence: 3 givenname: Xian surname: Du fullname: Du, Xian organization: Beijing Key Laboratory of Electrochemical Process and Technology for Materials – sequence: 4 givenname: Song surname: Hong fullname: Hong, Song organization: Beijing Key Laboratory of Electrochemical Process and Technology for Materials – sequence: 5 givenname: Shengna surname: Zhao fullname: Zhao, Shengna organization: Beijing Key Laboratory of Electrochemical Process and Technology for Materials – sequence: 6 givenname: Yaxin surname: Chen fullname: Chen, Yaxin organization: Beijing Key Laboratory of Electrochemical Process and Technology for Materials – sequence: 7 givenname: Xiaohong surname: Chen fullname: Chen, Xiaohong organization: Beijing Key Laboratory of Electrochemical Process and Technology for Materials – sequence: 8 givenname: Huaihe orcidid: 0000-0003-1547-0382 surname: Song fullname: Song, Huaihe email: songhh@mail.buct.edu.cn organization: Beijing Key Laboratory of Electrochemical Process and Technology for Materials
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Copyright	2019 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
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Snippet	Improving the capacitance of carbon materials for supercapacitors without sacrificing their rate performance, especially volumetric capacitance at high mass...
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SubjectTerms	Capacitance Carbon Chemical reactions defective graphene block Defects Doping double‐layer capacitance Energy storage Graphene Gravimetry Materials science Packing density Reaction kinetics self‐doping Surface area volumetric capacitance
Title	Boosting the Electrical Double‐Layer Capacitance of Graphene by Self‐Doped Defects through Ball‐Milling
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