3D/2D Perovskite Single Crystals Heterojunction for Suppressed Ions Migration in Hard X‐Ray Detection

Halide perovskites exhibit diverse properties depending on their compositions. However, integrating desired properties into one material is still challenging. Here, a facile solution‐processed epitaxial growth method to grow 2D perovskite single crystal on top of 3D perovskite single crystal, which...

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Published in:	Advanced functional materials Vol. 31; no. 49
Main Authors:	He, Yuhong, Pan, Wanting, Guo, Chunjie, Zhang, Huimao, Wei, Haotong, Yang, Bai
Format:	Journal Article
Language:	English
Published:	Hoboken Wiley Subscription Services, Inc 01.12.2021
Subjects:	3D/2D perovskite single crystals Carrier mobility Crystal defects Crystal growth Crystal surfaces Epitaxial growth hard X‐rays detection heterojunction Heterojunctions Materials science Perovskites Single crystals solution‐processed epitaxial growth suppressed ions migration Surface defects Thickness
ISSN:	1616-301X, 1616-3028
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Abstract	Halide perovskites exhibit diverse properties depending on their compositions. However, integrating desired properties into one material is still challenging. Here, a facile solution‐processed epitaxial growth method to grow 2D perovskite single crystal on top of 3D perovskite single crystal, which can passivate the surface defects for improved device performance is reported. Short formamidine (FA+) ions are replaced by long organic cations, which can fully align and cover the single crystal surface to prevent the ions migration or short FA+ ions volatilization. The thickness of epitaxial layer can be finely adjusted by controlling the growth time. The defect density of single crystals heterojunction is only 3.18 × 109 cm−3, and the carrier mobility is 80.43 cm2 V−1 s−1, which is greater than that of the control 3D perovskite single crystal. This study for the first time realized large area 3D/2D perovskite single crystals heterojunction, which suppressed ions migration and exhibited advanced performance in hard X‐rays detection applications. This strategy also provides a way to grow large area 2D perovskite single crystal from solution processes. The 2D epitaxial layer of the 3D/2D perovskite single crystals heterojunction can passivate the surface defects and suppress ion migration or short formamidine FA+ ion volatilization, which boost its optoelectric properties. The 3D/2D heterojunction X‐ray detector exhibits stable response to 120 kVp hard X‐rays, with the lowest detectable dose rate of 55 nGyairs−1.
AbstractList	Halide perovskites exhibit diverse properties depending on their compositions. However, integrating desired properties into one material is still challenging. Here, a facile solution‐processed epitaxial growth method to grow 2D perovskite single crystal on top of 3D perovskite single crystal, which can passivate the surface defects for improved device performance is reported. Short formamidine (FA+) ions are replaced by long organic cations, which can fully align and cover the single crystal surface to prevent the ions migration or short FA+ ions volatilization. The thickness of epitaxial layer can be finely adjusted by controlling the growth time. The defect density of single crystals heterojunction is only 3.18 × 109 cm−3, and the carrier mobility is 80.43 cm2 V−1 s−1, which is greater than that of the control 3D perovskite single crystal. This study for the first time realized large area 3D/2D perovskite single crystals heterojunction, which suppressed ions migration and exhibited advanced performance in hard X‐rays detection applications. This strategy also provides a way to grow large area 2D perovskite single crystal from solution processes. Halide perovskites exhibit diverse properties depending on their compositions. However, integrating desired properties into one material is still challenging. Here, a facile solution‐processed epitaxial growth method to grow 2D perovskite single crystal on top of 3D perovskite single crystal, which can passivate the surface defects for improved device performance is reported. Short formamidine (FA+) ions are replaced by long organic cations, which can fully align and cover the single crystal surface to prevent the ions migration or short FA+ ions volatilization. The thickness of epitaxial layer can be finely adjusted by controlling the growth time. The defect density of single crystals heterojunction is only 3.18 × 109 cm−3, and the carrier mobility is 80.43 cm2 V−1 s−1, which is greater than that of the control 3D perovskite single crystal. This study for the first time realized large area 3D/2D perovskite single crystals heterojunction, which suppressed ions migration and exhibited advanced performance in hard X‐rays detection applications. This strategy also provides a way to grow large area 2D perovskite single crystal from solution processes. The 2D epitaxial layer of the 3D/2D perovskite single crystals heterojunction can passivate the surface defects and suppress ion migration or short formamidine FA+ ion volatilization, which boost its optoelectric properties. The 3D/2D heterojunction X‐ray detector exhibits stable response to 120 kVp hard X‐rays, with the lowest detectable dose rate of 55 nGyairs−1. Halide perovskites exhibit diverse properties depending on their compositions. However, integrating desired properties into one material is still challenging. Here, a facile solution‐processed epitaxial growth method to grow 2D perovskite single crystal on top of 3D perovskite single crystal, which can passivate the surface defects for improved device performance is reported. Short formamidine (FA + ) ions are replaced by long organic cations, which can fully align and cover the single crystal surface to prevent the ions migration or short FA + ions volatilization. The thickness of epitaxial layer can be finely adjusted by controlling the growth time. The defect density of single crystals heterojunction is only 3.18 × 10 9 cm −3 , and the carrier mobility is 80.43 cm 2 V −1 s −1 , which is greater than that of the control 3D perovskite single crystal. This study for the first time realized large area 3D/2D perovskite single crystals heterojunction, which suppressed ions migration and exhibited advanced performance in hard X‐rays detection applications. This strategy also provides a way to grow large area 2D perovskite single crystal from solution processes.
Author	Wei, Haotong Pan, Wanting Guo, Chunjie Zhang, Huimao Yang, Bai He, Yuhong
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SubjectTerms	3D/2D perovskite single crystals Carrier mobility Crystal defects Crystal growth Crystal surfaces Epitaxial growth hard X‐rays detection heterojunction Heterojunctions Materials science Perovskites Single crystals solution‐processed epitaxial growth suppressed ions migration Surface defects Thickness
Title	3D/2D Perovskite Single Crystals Heterojunction for Suppressed Ions Migration in Hard X‐Ray Detection
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