Semiconducting M2X (M = Cu, Ag, Au; X = S, Se, Te) monolayers: A broad range of band gaps and high carrier mobilities

Two-dimensional semiconductors (2DSCs) with appropriate band gaps and high mobilities are highly desired for future-generation electronic and optoelectronic applications. Here, using first-principles calculations, we report a novel class of 2DSCs, group-11-chalcogenide monolayers (M 2 X, M = Cu, Ag,...

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Vydáno v:	Nano research Ročník 14; číslo 8; s. 2826 - 2830
Hlavní autoři:	Gao, Lei, Zhang, Yan-Fang, Du, Shixuan
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Beijing Tsinghua University Press 01.08.2021
Témata:	Atomic/Molecular Structure and Spectra Biomedicine Biotechnology Broadband Chalcogenides Chemistry and Materials Science Condensed Matter Physics Copper Crystals Electronic devices Electronic equipment Energy Energy bands Energy gap First principles Gold Infrared radiation Materials Science Mathematical analysis Monolayers Nanoelectronics Nanotechnology Optoelectronics Photoresponse Research Article Room temperature Silver Tellurium Ultraviolet radiation two-dimensional semiconductors first-principles calculations group-11-chalcogenides electronic properties
ISSN:	1998-0124, 1998-0000
On-line přístup:	Získat plný text
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