APA (7th ed.) Citation

Gao, L., Zhang, Y., & Du, S. (2021). Semiconducting M2X (M = Cu, Ag, Au; X = S, Se, Te) monolayers: A broad range of band gaps and high carrier mobilities. Nano research, 14(8), 2826-2830. https://doi.org/10.1007/s12274-021-3294-2

Chicago Style (17th ed.) Citation

Gao, Lei, Yan-Fang Zhang, and Shixuan Du. "Semiconducting M2X (M = Cu, Ag, Au; X = S, Se, Te) Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities." Nano Research 14, no. 8 (2021): 2826-2830. https://doi.org/10.1007/s12274-021-3294-2.

MLA (9th ed.) Citation

Gao, Lei, et al. "Semiconducting M2X (M = Cu, Ag, Au; X = S, Se, Te) Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities." Nano Research, vol. 14, no. 8, 2021, pp. 2826-2830, https://doi.org/10.1007/s12274-021-3294-2.