Defect accumulation in β-Ga2O3 implanted with Yb
Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (β-Ga2O3), is a complex process. This paper presents the detailed study of defect accumulation in the β-Ga2O3 single crystal implanted with Ytterbium (Yb) ions and the impact of Rapid T...
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| Vydáno v: | Acta materialia Ročník 268; s. 119760 |
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| Médium: | Journal Article |
| Jazyk: | angličtina |
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Elsevier Ltd
15.04.2024
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| ISSN: | 1359-6454 |
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| Abstract | Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (β-Ga2O3), is a complex process. This paper presents the detailed study of defect accumulation in the β-Ga2O3 single crystal implanted with Ytterbium (Yb) ions and the impact of Rapid Thermal Annealing (RTA) on the defects formed. The (2¯01)oriented β-Ga2O3 single crystals were implanted with eleven fluences of Yb ions ranging from 1 × 1012 to 5 × 1015 at/cm2. Channeling Rutherford Backscattering Spectrometry (RBS/c) was used to study the crystal lattice damage induced by ion implantation and the level of structure recovery after annealing. The quantitative and qualitative analyses of collected spectra were performed by computer simulations. As a result, we present the first defect accumulation curve of β-Ga2O3 implanted with rare earth ion that reveals a two-step damage process. In the first stage, the damage of the β-Ga2O3 is inconspicuous, but begins to grow rapidly from the fluence of 1 × 1013 at/cm2, reaching the saturation at the random level for the Yb ion fluence of 1 × 1014 at/cm2. Further irradiation causes the damage peak to become bimodal, indicating that at least two new defect forms develop for the higher ion fluence. These two damage zones differently react to annealing, suggesting that they could origin from two phases, the amorphization phase and the new crystalline phase of Ga2O3. High-resolution x-ray diffraction (HRXRD) demonstrates the presence of strain and the γ phase of Ga2O3 after implantation, which disappear after annealing.
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| AbstractList | Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (β-Ga2O3), is a complex process. This paper presents the detailed study of defect accumulation in the β-Ga2O3 single crystal implanted with Ytterbium (Yb) ions and the impact of Rapid Thermal Annealing (RTA) on the defects formed. The (2¯01)oriented β-Ga2O3 single crystals were implanted with eleven fluences of Yb ions ranging from 1 × 1012 to 5 × 1015 at/cm2. Channeling Rutherford Backscattering Spectrometry (RBS/c) was used to study the crystal lattice damage induced by ion implantation and the level of structure recovery after annealing. The quantitative and qualitative analyses of collected spectra were performed by computer simulations. As a result, we present the first defect accumulation curve of β-Ga2O3 implanted with rare earth ion that reveals a two-step damage process. In the first stage, the damage of the β-Ga2O3 is inconspicuous, but begins to grow rapidly from the fluence of 1 × 1013 at/cm2, reaching the saturation at the random level for the Yb ion fluence of 1 × 1014 at/cm2. Further irradiation causes the damage peak to become bimodal, indicating that at least two new defect forms develop for the higher ion fluence. These two damage zones differently react to annealing, suggesting that they could origin from two phases, the amorphization phase and the new crystalline phase of Ga2O3. High-resolution x-ray diffraction (HRXRD) demonstrates the presence of strain and the γ phase of Ga2O3 after implantation, which disappear after annealing.
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| ArticleNumber | 119760 |
| Author | Gieraltowska, Sylwia Wozniak, Wojciech Sarwar, Mahwish Wierzbicka, Aleksandra Ratajczak, Renata Eisenwinder, Stefan Guziewicz, Elżbieta Heller, René Mieszczynski, Cyprian |
| Author_xml | – sequence: 1 givenname: Mahwish orcidid: 0000-0002-8173-377X surname: Sarwar fullname: Sarwar, Mahwish email: sarwar@ifpan.edu.pl organization: Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland – sequence: 2 givenname: Renata orcidid: 0000-0001-8596-2230 surname: Ratajczak fullname: Ratajczak, Renata organization: National Centre for Nuclear Research, Soltana 7, 05–400 Otwock, Poland – sequence: 3 givenname: Cyprian orcidid: 0000-0002-0497-8984 surname: Mieszczynski fullname: Mieszczynski, Cyprian organization: National Centre for Nuclear Research, Soltana 7, 05–400 Otwock, Poland – sequence: 4 givenname: Aleksandra orcidid: 0000-0003-1379-5941 surname: Wierzbicka fullname: Wierzbicka, Aleksandra organization: Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland – sequence: 5 givenname: Sylwia surname: Gieraltowska fullname: Gieraltowska, Sylwia organization: Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland – sequence: 6 givenname: René surname: Heller fullname: Heller, René organization: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany – sequence: 7 givenname: Stefan surname: Eisenwinder fullname: Eisenwinder, Stefan organization: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany – sequence: 8 givenname: Wojciech surname: Wozniak fullname: Wozniak, Wojciech organization: Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland – sequence: 9 givenname: Elżbieta orcidid: 0000-0001-6158-5258 surname: Guziewicz fullname: Guziewicz, Elżbieta organization: Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland |
| BookMark | eNqFkE1OwzAUhL0oEm3hCEi5QMJz7MSJWCBUoCBV6gYWrCzn-Vm4yk-VuCCuxUE4Eyntik1Xs_pG882MTdquJcauOCQceH69SQwG05iQpJDKhPNS5TBhUy6yMs5lJs_ZbBg2ADxVEqaM35MjDJFB3DW72gTftZFvo5_veGnStYh8s61NG8hGnz68R2_VBTtzph7o8phz9vr48LJ4ilfr5fPibhWjgDLEhSydqgQWpawUR5CkrMVCUJU7qHjhMsidlGQriRwyApVZm0rrUCgUaMSc3Rx6se-GoSen0Ye_faE3vtYc9N5Yb_TRWO-N9cF4pLN_9Lb3jem_TnK3B45GtQ9PvR7QU4tkfT_-pG3nTzT8Aiqxd3w |
| CitedBy_id | crossref_primary_10_1002_pssr_202500060 crossref_primary_10_3390_ma17163979 crossref_primary_10_1016_j_vacuum_2025_114129 crossref_primary_10_1063_5_0235497 crossref_primary_10_1063_5_0239899 crossref_primary_10_1016_j_jallcom_2025_183932 crossref_primary_10_1088_1361_6463_adbbfe crossref_primary_10_1016_j_mtphys_2025_101731 crossref_primary_10_1002_advs_202508207 crossref_primary_10_1002_pssr_202400415 crossref_primary_10_1038_s41598_024_75187_6 |
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| ContentType | Journal Article |
| Copyright | 2024 Acta Materialia Inc. |
| Copyright_xml | – notice: 2024 Acta Materialia Inc. |
| DBID | AAYXX CITATION |
| DOI | 10.1016/j.actamat.2024.119760 |
| DatabaseName | CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| ExternalDocumentID | 10_1016_j_actamat_2024_119760 S1359645424001137 |
| GroupedDBID | --K --M -~X .~1 0R~ 1B1 1~. 1~5 23M 4.4 457 4G. 5GY 5VS 7-5 71M 8P~ AABNK AABXZ AACTN AAEDT AAEDW AAEPC AAIKJ AAKOC AALRI AAOAW AAQFI AAXKI AAXUO ABFNM ABMAC ABNEU ABXRA ACDAQ ACGFS ACRLP ADBBV ADEZE AEBSH AEKER AENEX AEZYN AFJKZ AFKWA AFRZQ AFTJW AGHFR AGUBO AGYEJ AIEXJ AIKHN AITUG AIVDX AJOXV AKRWK ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ AXJTR BKOJK BLXMC CS3 EBS EFJIC EO8 EO9 EP2 EP3 F5P FDB FEDTE FIRID FNPLU FYGXN G-Q GBLVA HVGLF HZ~ IHE J1W KOM M41 MAGPM N9A O-L O9- OAUVE OGIMB OZT P-8 P-9 PC. Q38 RIG RNS ROL RPZ SDF SDG SDP SES SEW SPC SPCBC SPD SSM SSQ SSZ T5K TN5 XPP ZMT ~G- 9DU AAQXK AATTM AAYWO AAYXX ABJNI ABWVN ABXDB ACLOT ACNNM ACRPL ACVFH ADCNI ADIYS ADMUD ADNMO AEIPS AEUPX AFFNX AFPUW AGQPQ AIGII AIIUN AKBMS AKYEP ANKPU APXCP ASPBG AVWKF AZFZN CITATION EFKBS EFLBG EJD FGOYB R2- T9H ZY4 ~HD |
| ID | FETCH-LOGICAL-c309t-849f7b3c894b71c04e7ddc83eb6f0b18f506f44edb4c105e075dd24dfc37c3ca3 |
| ISICitedReferencesCount | 15 |
| ISICitedReferencesURI | http://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=Summon&SrcAuth=ProQuest&DestLinkType=CitingArticles&DestApp=WOS_CPL&KeyUT=001197834900001&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D |
| ISSN | 1359-6454 |
| IngestDate | Sat Nov 29 02:47:59 EST 2025 Tue Nov 18 22:28:12 EST 2025 Sat Sep 21 16:02:01 EDT 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Keywords | High-resolution x-ray diffraction Ion implantation Rare-earth ions Rutherford backscattering spectrometry McChasy Gallium oxide |
| Language | English |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c309t-849f7b3c894b71c04e7ddc83eb6f0b18f506f44edb4c105e075dd24dfc37c3ca3 |
| ORCID | 0000-0002-0497-8984 0000-0003-1379-5941 0000-0001-6158-5258 0000-0001-8596-2230 0000-0002-8173-377X |
| ParticipantIDs | crossref_citationtrail_10_1016_j_actamat_2024_119760 crossref_primary_10_1016_j_actamat_2024_119760 elsevier_sciencedirect_doi_10_1016_j_actamat_2024_119760 |
| PublicationCentury | 2000 |
| PublicationDate | 2024-04-15 |
| PublicationDateYYYYMMDD | 2024-04-15 |
| PublicationDate_xml | – month: 04 year: 2024 text: 2024-04-15 day: 15 |
| PublicationDecade | 2020 |
| PublicationTitle | Acta materialia |
| PublicationYear | 2024 |
| Publisher | Elsevier Ltd |
| Publisher_xml | – name: Elsevier Ltd |
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| SSID | ssj0012740 |
| Score | 2.5191412 |
| Snippet | Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (β-Ga2O3), is a complex process. This paper... |
| SourceID | crossref elsevier |
| SourceType | Enrichment Source Index Database Publisher |
| StartPage | 119760 |
| SubjectTerms | Gallium oxide High-resolution x-ray diffraction Ion implantation McChasy Rare-earth ions Rutherford backscattering spectrometry |
| Title | Defect accumulation in β-Ga2O3 implanted with Yb |
| URI | https://dx.doi.org/10.1016/j.actamat.2024.119760 |
| Volume | 268 |
| WOSCitedRecordID | wos001197834900001&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| journalDatabaseRights | – providerCode: PRVESC databaseName: Elsevier SD Freedom Collection Journals 2021 issn: 1359-6454 databaseCode: AIEXJ dateStart: 19960101 customDbUrl: isFulltext: true dateEnd: 99991231 titleUrlDefault: https://www.sciencedirect.com omitProxy: false ssIdentifier: ssj0012740 providerName: Elsevier |
| link | http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV1Lb9NAEF5BygEOiKdaXvKBnpCDs15nd48hhJdEQbSI9GTNPiycFBPZLm3zs_gh_CZ2vWvHgoqXxMWKLO3anm80-TyebwahhySCxNBaFWLNZWiiJA1hxCDkCYwzmiiWMNEMm6B7e2w-52_9_M6qGSdAi4KdnvLVf4XanDNgW-nsX8DdbWpOmN8GdHM0sJvjHwH_VDf9iEHK409-NpdNauxOZ7tPcPgc8JvYaiOPrEl96fmh6HPUiazhkSGyzc3mXdjeh_LEVWO_ho8nedXlkd9BDQu5hqWDq3BqN6801NVars_a6djTs1XZ88cP5j95LXK5BK-1WVZQqBL6qQjcVLA4MabLj7UamU1Bkg2pccJD2zesH3Oxm6XzU_x2qYSF8aUazIMO7VWG9kunGzrwQ2vsfbu33doWwo6Mn11EW5gmnA3Q1uTlbP6q-55k3r2dXtzfy0bL9fjci53PUnrM4-AauupfGYKJg_o6uqCLG-hKr5HkTTRyoAd90IO8CL59dYAHHeCBBTw4FLfQ-2ezg-mL0A_DCGUc8TpkhGdUxJJxIuhIRkRTpSSLtRhnkRixLInGGSFaCSINZ9aGCiqFicpkTGUsIb6NBsXnQm-jQAlOM0yBKxwTnDGwYTgCDJEUgsloB5H24VPpO8XbgSVHaVsSuEi9zVJrs9TZbAcNu2Ur1yrldwtYa9nU8z3H41LjDr9eeuffl95Flze-ew8N6vJY30eX5Jc6r8oH3nG-A09Ve8U |
| linkProvider | Elsevier |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Defect+accumulation+in+%CE%B2-Ga2O3+implanted+with+Yb&rft.jtitle=Acta+materialia&rft.au=Sarwar%2C+Mahwish&rft.au=Ratajczak%2C+Renata&rft.au=Mieszczynski%2C+Cyprian&rft.au=Wierzbicka%2C+Aleksandra&rft.date=2024-04-15&rft.pub=Elsevier+Ltd&rft.issn=1359-6454&rft.volume=268&rft_id=info:doi/10.1016%2Fj.actamat.2024.119760&rft.externalDocID=S1359645424001137 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1359-6454&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1359-6454&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1359-6454&client=summon |