Origination and evolution of point defects in AlN film annealed at high temperature

While high temperature annealing has been proven to be an effective strategy to reduce threading dislocation density of AlN film, the point defect induced near-ultraviolet emission increases dramatically with the increase in annealing temperature, and thus limits its application in deep ultraviolet...

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Veröffentlicht in:	Journal of luminescence Jg. 235; S. 118032
Hauptverfasser:	Kai, Cuihong, Zang, Hang, Ben, Jianwei, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Cao, Xingzhong, Lü, Wei, Sun, Xiaojuan, Li, Dabing
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	Elsevier B.V 01.07.2021
Schlagworte:	AlN Evolution mechanism High temperature annealing Point defects AlN Point defects Evolution mechanism High temperature annealing
ISSN:	0022-2313, 1872-7883
Online-Zugang:	Volltext
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