Origination and evolution of point defects in AlN film annealed at high temperature
While high temperature annealing has been proven to be an effective strategy to reduce threading dislocation density of AlN film, the point defect induced near-ultraviolet emission increases dramatically with the increase in annealing temperature, and thus limits its application in deep ultraviolet...
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| Veröffentlicht in: | Journal of luminescence Jg. 235; S. 118032 |
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| Format: | Journal Article |
| Sprache: | Englisch |
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Elsevier B.V
01.07.2021
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| ISSN: | 0022-2313, 1872-7883 |
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| Abstract | While high temperature annealing has been proven to be an effective strategy to reduce threading dislocation density of AlN film, the point defect induced near-ultraviolet emission increases dramatically with the increase in annealing temperature, and thus limits its application in deep ultraviolet optoelectronic devices. Herein, the origination and evolution of point defects in high-temperature annealed AlN are studied and clarified by photoluminescence spectroscopy, secondary ion mass spectrometry, positron annihilation and first-principles calculation. We have confirmed that (1) the annealing induces the increased O impurity concentration by two orders of magnitude; (2) The increase of O impurity concentration in AlN after high temperature annealing is the key factor that causes the evolution of point defects and the enhancement of near ultraviolet defect peak; (3) the formation of more O content [VAl-n(ON)] and VN at different annealing temperatures are responsible for photoluminescence evolution. Present work reveals the formation mechanism of point defects in AlN and provides further support for improving the quality of AlN.
•The O point defects increase during the high temperature annealing process.•The VAl-2(ON) and VN defects are responsible for photoluminescence evolution.•The optical transition energies was evaluated by DFT calculations. |
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| AbstractList | While high temperature annealing has been proven to be an effective strategy to reduce threading dislocation density of AlN film, the point defect induced near-ultraviolet emission increases dramatically with the increase in annealing temperature, and thus limits its application in deep ultraviolet optoelectronic devices. Herein, the origination and evolution of point defects in high-temperature annealed AlN are studied and clarified by photoluminescence spectroscopy, secondary ion mass spectrometry, positron annihilation and first-principles calculation. We have confirmed that (1) the annealing induces the increased O impurity concentration by two orders of magnitude; (2) The increase of O impurity concentration in AlN after high temperature annealing is the key factor that causes the evolution of point defects and the enhancement of near ultraviolet defect peak; (3) the formation of more O content [VAl-n(ON)] and VN at different annealing temperatures are responsible for photoluminescence evolution. Present work reveals the formation mechanism of point defects in AlN and provides further support for improving the quality of AlN.
•The O point defects increase during the high temperature annealing process.•The VAl-2(ON) and VN defects are responsible for photoluminescence evolution.•The optical transition energies was evaluated by DFT calculations. |
| ArticleNumber | 118032 |
| Author | Sun, Xiaojuan Ben, Jianwei Shi, Zhiming Cao, Xingzhong Li, Dabing Zang, Hang Kai, Cuihong Jia, Yuping Jiang, Ke Lü, Wei |
| Author_xml | – sequence: 1 givenname: Cuihong surname: Kai fullname: Kai, Cuihong organization: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nan Hu Road, Changchun, 130033, People's Republic of China – sequence: 2 givenname: Hang orcidid: 0000-0002-1797-6857 surname: Zang fullname: Zang, Hang organization: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nan Hu Road, Changchun, 130033, People's Republic of China – sequence: 3 givenname: Jianwei surname: Ben fullname: Ben, Jianwei organization: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nan Hu Road, Changchun, 130033, People's Republic of China – sequence: 4 givenname: Ke surname: Jiang fullname: Jiang, Ke organization: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nan Hu Road, Changchun, 130033, People's Republic of China – sequence: 5 givenname: Zhiming orcidid: 0000-0002-1207-570X surname: Shi fullname: Shi, Zhiming organization: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nan Hu Road, Changchun, 130033, People's Republic of China – sequence: 6 givenname: Yuping surname: Jia fullname: Jia, Yuping organization: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nan Hu Road, Changchun, 130033, People's Republic of China – sequence: 7 givenname: Xingzhong orcidid: 0000-0001-5011-5912 surname: Cao fullname: Cao, Xingzhong organization: Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China – sequence: 8 givenname: Wei surname: Lü fullname: Lü, Wei email: lw771119@hotmail.com organization: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nan Hu Road, Changchun, 130033, People's Republic of China – sequence: 9 givenname: Xiaojuan surname: Sun fullname: Sun, Xiaojuan organization: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nan Hu Road, Changchun, 130033, People's Republic of China – sequence: 10 givenname: Dabing surname: Li fullname: Li, Dabing email: lidb@ciomp.ac.cn organization: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nan Hu Road, Changchun, 130033, People's Republic of China |
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| Cites_doi | 10.1103/PhysRevB.84.081204 10.1039/C8CE00287H 10.1103/PhysRevB.72.165303 10.1007/BF00617834 10.1002/pssb.201900104 10.1021/acs.jpcc.8b11807 10.1016/j.jlumin.2016.05.055 10.1002/pssb.201046289 10.1063/1.5099916 10.1063/1.3154518 10.1063/1.1645790 10.1063/1.3120267 10.1038/lsa.2017.150 10.1063/1.111994 10.1002/pssb.200880753 10.1088/1742-6596/265/1/012003 10.1039/C8CE00770E 10.1016/j.jcrysgro.2008.06.013 10.1364/AOP.10.000043 10.1063/1.3079333 10.1016/j.jcrysgro.2006.09.046 10.1088/1742-6596/674/1/012020 10.1103/PhysRevApplied.9.054036 10.1088/1402-4896/aafaa2 10.1103/PhysRevB.54.11169 10.1038/lsa.2012.22 10.1002/pssb.201046616 10.1103/PhysRevLett.79.3030 10.1063/1.1943489 10.1063/1.1682673 10.1016/0927-0256(96)00008-0 10.1088/1361-648X/ab35a4 10.1063/1.4895786 10.1063/1.1564060 10.1063/1.3675270 10.1063/1.4824731 10.1103/PhysRevLett.77.3865 10.1002/pssb.201700521 10.1103/PhysRevLett.102.016402 |
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| Keywords | AlN Point defects Evolution mechanism High temperature annealing |
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| References | Freysoldt, Neugebauer, Van de Walle (bib23) 2009; 102 Bowes, Wu, Baker, Harris, Irving (bib43) 2019; 115 Perdew, Burke, Ernzerhof (bib20) 1996; 77 Nam, Nakarmi, Lin, Jianga (bib6) 2005; 86 Tuomisto, Makia, Chemekova, Makarov, Avdeev, Mokhov, Sega, Rammc, Davis, Huminic, Helava, Bickermann, Epelbaum (bib34) 2008; 310 Ishibashi, Uedono (bib41) 2016; 674 Kresse, Furthmiiller (bib19) 1996; 6 Matioli, Brinkley, Kelchner, Hu, Nakamura, DenBaars, Speck, Weisbuch (bib3) 2012; 1 Uedono, Fujishima, Cao, Zhang, Yoshihara, Ishibashi, Sumiya, Laboutin, Johnson, Palacios (bib36) 2018; 255 Growden, Zhang, Brown, Storm, Meyer, Berger (bib2) 2018; 7 Youngman, Harris (bib5) 1990; 73 Schulz, Albrecht, Irmscher, Hartmann, Wollweber, Fornari (bib7) 2011; 248 Uedono, Tenjinbayashi, Tsutsui, Shimahara, Miyake, Hiramatsu, Oshima, Suzuki, Ishibashi (bib30) 2012; 111 Yan, Janotti, Scheffler, Van de Walle (bib42) 2014; 105 Hautojarvi (bib27) 1979 Dadgar, Krost, Christen, Bastek, Bertram, Krtschil, Hempel, Bläsing, Haboeck, Hoffmann (bib12) 2006; 297 Liu, Wang, Li, Wang, Zhang, He, Wang, Song, Cao, Wang, Lin, Liu, Zhao, Gong, Chen (bib40) 2019; 123 Yang, Zhu, Wang, Fang, Yu, Yang, Zhang, Qin, Yu, Wang (bib39) 2009; 94 Saarinen, Laine, Kuisma, Nissilä, Hautojärvi, Dobrzynski, Baranowski, Pakula, Stepniewski, Wojdak, Wysmolek, Suski, Leszczynski, Grzegory, Porowski (bib15) 1997; 79 Van de Walle, Neugebauer (bib22) 2004; 95 Alden, Harris, Bryan, Baker, Reddy, Mita, Callsen, Hoffmann, Irving, Collazo, Sitar (bib11) 2018; 9 Yan, Janotti, Scheffler, Van de Walle (bib9) 2014; 105 Valkealahti, Nieminen (bib16) 1983; 32 Freysoldt, Neugebauer, Van de Walle (bib24) 2011; 248 Tuomisto (bib35) 2011; 265 Hung, Russo, McCulloch, Prawer (bib31) 2004; 120 Miyake, Nishio, Suzuki, Hiramatsu, Fukuyama, Kaur, Kuwano (bib4) 2016; 9 Heyd, Scuseria, Ernzerhof (bib21) 2003; 118 Liszkay, Corbel, Baroux, Hautojärvi, Bayhan, Brinkman, Tatarenko (bib38) 1994; 64 Bickermann, Epelbaum, Filip, Heimann, Nagata, Winnacker (bib8) 2009; 246 Gaddy, Bryan, Bryan, Kirste, Xie, Dalmau, Moody, Kumagai, Nagashima, Kubota, Kinoshita, Koukitu, Sitar, Collazo, Irving (bib10) 2013; 103 Uedono, Iguchi, Narita, Kataoka, Egger, Koschine, Hugenschmidt, Dickmann, Shima, Kojima, Chichibu, Ishibashi (bib29) 2019; 256 Maki, Makkonen, Tuomisto, Karjalainen, Suihkonen, Raisanen, Chemekova, Makarov (bib32) 2011; 84 Uedono, Ishibashi, Keller, Moe, Cantu, Katona, Kamber, Wu, Letts, Newman, Nakamura, Speck, Mishra, DenBaars, Onuma, Chichibu (bib33) 2009; 105 Bastek, Bertram, Christen, Hempel, Dadgar, Krost (bib13) 2009; 95 Kresse, Furthmuller (bib18) 1996; 54 Ishibashi, Uedono, Kino, Miyake, Terakura (bib37) 2019; 31 Jiang, Sun, Ben, Jia, Liu, Wang, Wu, Kai, Li (bib25) 2018; 20 Ben, Sun, Jia, Jiang, Shi, Liu, Wang, Kai, Wu, Li (bib26) 2018; 20 Koppen, Hofsäss, Vetter (bib14) 2016; 178 Hautakangas, Saarinen, Liszkay, Freitas, Henry (bib28) 2005; 72 Li, Cao, Ning, Liu, Wang, Zhang, Wei, Li (bib17) 2019; 94 Li, Jiang, Sun, Guo (bib1) 2018; 10 Ishibashi (10.1016/j.jlumin.2021.118032_bib41) 2016; 674 Li (10.1016/j.jlumin.2021.118032_bib1) 2018; 10 Hautojarvi (10.1016/j.jlumin.2021.118032_bib27) 1979 Uedono (10.1016/j.jlumin.2021.118032_bib36) 2018; 255 Freysoldt (10.1016/j.jlumin.2021.118032_bib23) 2009; 102 Ben (10.1016/j.jlumin.2021.118032_bib26) 2018; 20 Uedono (10.1016/j.jlumin.2021.118032_bib29) 2019; 256 Uedono (10.1016/j.jlumin.2021.118032_bib30) 2012; 111 Schulz (10.1016/j.jlumin.2021.118032_bib7) 2011; 248 Bowes (10.1016/j.jlumin.2021.118032_bib43) 2019; 115 Growden (10.1016/j.jlumin.2021.118032_bib2) 2018; 7 Youngman (10.1016/j.jlumin.2021.118032_bib5) 1990; 73 Yang (10.1016/j.jlumin.2021.118032_bib39) 2009; 94 Maki (10.1016/j.jlumin.2021.118032_bib32) 2011; 84 Li (10.1016/j.jlumin.2021.118032_bib17) 2019; 94 Kresse (10.1016/j.jlumin.2021.118032_bib18) 1996; 54 Liszkay (10.1016/j.jlumin.2021.118032_bib38) 1994; 64 Nam (10.1016/j.jlumin.2021.118032_bib6) 2005; 86 Bastek (10.1016/j.jlumin.2021.118032_bib13) 2009; 95 Kresse (10.1016/j.jlumin.2021.118032_bib19) 1996; 6 Saarinen (10.1016/j.jlumin.2021.118032_bib15) 1997; 79 Jiang (10.1016/j.jlumin.2021.118032_bib25) 2018; 20 Dadgar (10.1016/j.jlumin.2021.118032_bib12) 2006; 297 Bickermann (10.1016/j.jlumin.2021.118032_bib8) 2009; 246 Miyake (10.1016/j.jlumin.2021.118032_bib4) 2016; 9 Heyd (10.1016/j.jlumin.2021.118032_bib21) 2003; 118 Tuomisto (10.1016/j.jlumin.2021.118032_bib35) 2011; 265 Gaddy (10.1016/j.jlumin.2021.118032_bib10) 2013; 103 Hautakangas (10.1016/j.jlumin.2021.118032_bib28) 2005; 72 Hung (10.1016/j.jlumin.2021.118032_bib31) 2004; 120 Yan (10.1016/j.jlumin.2021.118032_bib42) 2014; 105 Liu (10.1016/j.jlumin.2021.118032_bib40) 2019; 123 Ishibashi (10.1016/j.jlumin.2021.118032_bib37) 2019; 31 Koppen (10.1016/j.jlumin.2021.118032_bib14) 2016; 178 Perdew (10.1016/j.jlumin.2021.118032_bib20) 1996; 77 Uedono (10.1016/j.jlumin.2021.118032_bib33) 2009; 105 Alden (10.1016/j.jlumin.2021.118032_bib11) 2018; 9 Van de Walle (10.1016/j.jlumin.2021.118032_bib22) 2004; 95 Freysoldt (10.1016/j.jlumin.2021.118032_bib24) 2011; 248 Tuomisto (10.1016/j.jlumin.2021.118032_bib34) 2008; 310 Yan (10.1016/j.jlumin.2021.118032_bib9) 2014; 105 Matioli (10.1016/j.jlumin.2021.118032_bib3) 2012; 1 Valkealahti (10.1016/j.jlumin.2021.118032_bib16) 1983; 32 |
| References_xml | – volume: 310 start-page: 3998 year: 2008 ident: bib34 article-title: Characterization of bulk AlN crystals with positron annihilation spectroscopy[J] publication-title: J. Cryst. Growth – volume: 20 start-page: 4623 year: 2018 end-page: 4629 ident: bib26 article-title: Defect evolution in Al N templates on PVD-Al N/sapphire substrates by thermal annealing[J] publication-title: CrystEngComm – volume: 7 start-page: 17150 year: 2018 ident: bib2 article-title: Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures[J] publication-title: Light Sci. Appl. – volume: 79 start-page: 3030 year: 1997 ident: bib15 article-title: Observation of native Ga vacancies in GaN by positron annihilation publication-title: Phys. Rev. Lett. – volume: 94 year: 2019 ident: bib17 article-title: Implantation profiles and depth distribution of slow positron beam simulated by Geant4 toolkit[J] publication-title: Phys. Scripta – volume: 248 start-page: 1513 year: 2011 ident: bib7 article-title: Ultraviolet luminescence in AlN[J] publication-title: Phys. Status Solidi B – volume: 84 year: 2011 ident: bib32 article-title: Identification of the V publication-title: Phys. Rev. B – volume: 10 start-page: 43 year: 2018 end-page: 110 ident: bib1 article-title: AlGaN photonics: recent advances in materials and ultraviolet devices[J] publication-title: Adv. Opt Photon – volume: 256 start-page: 1900104 year: 2019 ident: bib29 article-title: Annealing behavior of vacancy‐type defects in Mg‐and H‐implanted GaN studied using monoenergetic positron beams[J] publication-title: Phys. Status Solidi B – volume: 54 start-page: 11169 year: 1996 ident: bib18 article-title: Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set[J] publication-title: Phys. Rev. B – volume: 118 start-page: 8207 year: 2003 ident: bib21 article-title: Hybrid functionals based on a screened Coulomb potential[J] publication-title: J. Chem. Phys. – volume: 255 start-page: 1700521 year: 2018 ident: bib36 article-title: Carrier trapping by vacancy‐type defects in Mg‐implanted GaN studied using monoenergetic positron beams[J] publication-title: Phys. Status Solidi B – volume: 86 start-page: 222108 year: 2005 ident: bib6 article-title: Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys[J] publication-title: Appl. Phys. Lett. – volume: 32 start-page: 95 year: 1983 end-page: 106 ident: bib16 article-title: Monte-carlo calculations of keV electron and positron slowing down in solids[J] publication-title: Appl. Phys. A – volume: 20 start-page: 2720 year: 2018 end-page: 2728 ident: bib25 article-title: The defect evolution in homoepitaxial Al N layers grown by high-temperature metal-organic chemical vapor deposition publication-title: CrystEngComm – volume: 94 start-page: 151907 year: 2009 ident: bib39 article-title: Positron annihilation in (Ga, Mn)N: a study of vacancy-type defects[J] publication-title: Appl. Phys. Lett. – volume: 105 start-page: 111104 year: 2014 ident: bib9 article-title: Origins of optical absorption and emission lines in AlN[J] publication-title: Appl. Phys. Lett. – volume: 265 year: 2011 ident: bib35 article-title: Vacancy defects in III-nitrides: what does positron annihilation spectroscopy reveal?[C] publication-title: J. Phys. Conf. – volume: 31 start-page: 475401 year: 2019 ident: bib37 article-title: Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys[J] publication-title: J. Phys. Condens. Matter – volume: 674 year: 2016 ident: bib41 article-title: Computational studies of positron states and annihilation parameters in semiconductors – vacancy-type defects in group-III nitrides[J] publication-title: J. Phys. Conf. – volume: 64 start-page: 1380 year: 1994 ident: bib38 article-title: Positron trapping at divacancies in thin polycrystalline CdTe films deposited on glass[J] publication-title: Appl. Phys. Lett. – volume: 120 start-page: 4890 year: 2004 ident: bib31 article-title: An ab initio study of structural properties and single vacancy defects in Wurtzite AlN[J] publication-title: J. Chem. Phys. – start-page: 1 year: 1979 end-page: 4 ident: bib27 article-title: Positrons in Solids[M] – volume: 72 start-page: 165303 year: 2005 ident: bib28 article-title: Role of open volume defects in Mg-doped GaN films studied by positron annihilation spectroscopy[J] publication-title: Phys. Rev. B – volume: 105 start-page: 111104 year: 2014 ident: bib42 article-title: Origins of optical absorption and emission lines in AlN publication-title: Appl. Phys. Lett. – volume: 115 year: 2019 ident: bib43 article-title: Space charge control of point defect spin states in AlN publication-title: Appl. Phys. Lett. – volume: 248 start-page: 1067 year: 2011 end-page: 1076 ident: bib24 article-title: Electrostatic interactions between charged defects in supercells[J] publication-title: Phys. Status Solidi B – volume: 105 year: 2009 ident: bib33 article-title: Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation[J] publication-title: J. Appl. Phys. – volume: 73 start-page: 3238 year: 1990 end-page: 3246 ident: bib5 article-title: Luminescence studies of oxygen‐related defects in Aluminum nitride[J] publication-title: J. Am. Chem. Soc. – volume: 246 start-page: 1181 year: 2009 end-page: 1183 ident: bib8 article-title: Point defect content and optical transitions in bulk aluminum nitride crystals[J] publication-title: Phys. Status Solidi B – volume: 1 start-page: e22 year: 2012 ident: bib3 article-title: High-brightness polarized light-emitting diodes[J] publication-title: Light Sci. Appl. – volume: 9 year: 2016 ident: bib4 article-title: Annealing of an AlN buffer layer in N publication-title: APEX – volume: 103 start-page: 161901 year: 2013 ident: bib10 article-title: Vacancy compensation and related donor-acceptor pair recombination in bulk AlN[J] publication-title: Appl. Phys. Lett. – volume: 102 year: 2009 ident: bib23 article-title: Fully ab initio finite-size corrections for charged-defect supercell calculations[J] publication-title: Phys. Rev. Lett. – volume: 6 start-page: 15 year: 1996 end-page: 50 ident: bib19 article-title: Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set[J] publication-title: Comput. Mater. Sci. – volume: 9 year: 2018 ident: bib11 article-title: Point-defect nature of the ultraviolet absorption band in AlN[J] publication-title: Phys. Rev. Appl. – volume: 77 start-page: 3865 year: 1996 ident: bib20 article-title: Generalized gradient approximation made simple[J] publication-title: Phys. Rev. Lett. – volume: 123 start-page: 8865 year: 2019 ident: bib40 article-title: Point-defect distribution and transformation near the surfaces of AlGaN films grown by MOCVD[J] publication-title: J. Phys. Chem. C – volume: 95 year: 2009 ident: bib13 article-title: Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy publication-title: Appl. Phys. Lett. – volume: 297 start-page: 306 year: 2006 end-page: 310 ident: bib12 article-title: MOVPE growth of high-quality AlN[J]. Journal of crystal growth publication-title: J. Cryst. Growth – volume: 178 start-page: 267 year: 2016 end-page: 281 ident: bib14 article-title: Overview of band-edge and defect related luminescence in aluminum nitride publication-title: J. Lumin. – volume: 111 year: 2012 ident: bib30 article-title: Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams[J] publication-title: J. Appl. Phys. – volume: 95 start-page: 3851 year: 2004 end-page: 3879 ident: bib22 article-title: First-principles calculations for defects and impurities: applications to III-nitrides[J] publication-title: J. Appl. Phys. – volume: 84 year: 2011 ident: 10.1016/j.jlumin.2021.118032_bib32 article-title: Identification of the VAl-ON defect complex in AlN single crystals[J] publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.84.081204 – volume: 20 start-page: 2720 year: 2018 ident: 10.1016/j.jlumin.2021.118032_bib25 article-title: The defect evolution in homoepitaxial Al N layers grown by high-temperature metal-organic chemical vapor deposition publication-title: CrystEngComm doi: 10.1039/C8CE00287H – volume: 72 start-page: 165303 year: 2005 ident: 10.1016/j.jlumin.2021.118032_bib28 article-title: Role of open volume defects in Mg-doped GaN films studied by positron annihilation spectroscopy[J] publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.72.165303 – volume: 32 start-page: 95 year: 1983 ident: 10.1016/j.jlumin.2021.118032_bib16 article-title: Monte-carlo calculations of keV electron and positron slowing down in solids[J] publication-title: Appl. Phys. A doi: 10.1007/BF00617834 – volume: 256 start-page: 1900104 year: 2019 ident: 10.1016/j.jlumin.2021.118032_bib29 article-title: Annealing behavior of vacancy‐type defects in Mg‐and H‐implanted GaN studied using monoenergetic positron beams[J] publication-title: Phys. Status Solidi B doi: 10.1002/pssb.201900104 – volume: 123 start-page: 8865 year: 2019 ident: 10.1016/j.jlumin.2021.118032_bib40 article-title: Point-defect distribution and transformation near the surfaces of AlGaN films grown by MOCVD[J] publication-title: J. Phys. Chem. C doi: 10.1021/acs.jpcc.8b11807 – volume: 178 start-page: 267 year: 2016 ident: 10.1016/j.jlumin.2021.118032_bib14 article-title: Overview of band-edge and defect related luminescence in aluminum nitride publication-title: J. Lumin. doi: 10.1016/j.jlumin.2016.05.055 – volume: 248 start-page: 1067 year: 2011 ident: 10.1016/j.jlumin.2021.118032_bib24 article-title: Electrostatic interactions between charged defects in supercells[J] publication-title: Phys. Status Solidi B doi: 10.1002/pssb.201046289 – volume: 115 year: 2019 ident: 10.1016/j.jlumin.2021.118032_bib43 article-title: Space charge control of point defect spin states in AlN publication-title: Appl. Phys. Lett. doi: 10.1063/1.5099916 – volume: 95 year: 2009 ident: 10.1016/j.jlumin.2021.118032_bib13 article-title: Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy publication-title: Appl. Phys. Lett. doi: 10.1063/1.3154518 – volume: 120 start-page: 4890 year: 2004 ident: 10.1016/j.jlumin.2021.118032_bib31 article-title: An ab initio study of structural properties and single vacancy defects in Wurtzite AlN[J] publication-title: J. Chem. Phys. doi: 10.1063/1.1645790 – volume: 94 start-page: 151907 year: 2009 ident: 10.1016/j.jlumin.2021.118032_bib39 article-title: Positron annihilation in (Ga, Mn)N: a study of vacancy-type defects[J] publication-title: Appl. Phys. Lett. doi: 10.1063/1.3120267 – volume: 7 start-page: 17150 year: 2018 ident: 10.1016/j.jlumin.2021.118032_bib2 article-title: Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures[J] publication-title: Light Sci. Appl. doi: 10.1038/lsa.2017.150 – volume: 64 start-page: 1380 year: 1994 ident: 10.1016/j.jlumin.2021.118032_bib38 article-title: Positron trapping at divacancies in thin polycrystalline CdTe films deposited on glass[J] publication-title: Appl. Phys. Lett. doi: 10.1063/1.111994 – volume: 246 start-page: 1181 year: 2009 ident: 10.1016/j.jlumin.2021.118032_bib8 article-title: Point defect content and optical transitions in bulk aluminum nitride crystals[J] publication-title: Phys. Status Solidi B doi: 10.1002/pssb.200880753 – volume: 265 year: 2011 ident: 10.1016/j.jlumin.2021.118032_bib35 article-title: Vacancy defects in III-nitrides: what does positron annihilation spectroscopy reveal?[C] publication-title: J. Phys. Conf. doi: 10.1088/1742-6596/265/1/012003 – volume: 20 start-page: 4623 year: 2018 ident: 10.1016/j.jlumin.2021.118032_bib26 article-title: Defect evolution in Al N templates on PVD-Al N/sapphire substrates by thermal annealing[J] publication-title: CrystEngComm doi: 10.1039/C8CE00770E – volume: 310 start-page: 3998 year: 2008 ident: 10.1016/j.jlumin.2021.118032_bib34 article-title: Characterization of bulk AlN crystals with positron annihilation spectroscopy[J] publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2008.06.013 – volume: 10 start-page: 43 year: 2018 ident: 10.1016/j.jlumin.2021.118032_bib1 article-title: AlGaN photonics: recent advances in materials and ultraviolet devices[J] publication-title: Adv. Opt Photon doi: 10.1364/AOP.10.000043 – volume: 105 year: 2009 ident: 10.1016/j.jlumin.2021.118032_bib33 article-title: Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation[J] publication-title: J. Appl. Phys. doi: 10.1063/1.3079333 – volume: 297 start-page: 306 year: 2006 ident: 10.1016/j.jlumin.2021.118032_bib12 article-title: MOVPE growth of high-quality AlN[J]. Journal of crystal growth publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2006.09.046 – volume: 674 year: 2016 ident: 10.1016/j.jlumin.2021.118032_bib41 article-title: Computational studies of positron states and annihilation parameters in semiconductors – vacancy-type defects in group-III nitrides[J] publication-title: J. Phys. Conf. doi: 10.1088/1742-6596/674/1/012020 – volume: 9 year: 2018 ident: 10.1016/j.jlumin.2021.118032_bib11 article-title: Point-defect nature of the ultraviolet absorption band in AlN[J] publication-title: Phys. Rev. Appl. doi: 10.1103/PhysRevApplied.9.054036 – volume: 94 year: 2019 ident: 10.1016/j.jlumin.2021.118032_bib17 article-title: Implantation profiles and depth distribution of slow positron beam simulated by Geant4 toolkit[J] publication-title: Phys. Scripta doi: 10.1088/1402-4896/aafaa2 – volume: 54 start-page: 11169 year: 1996 ident: 10.1016/j.jlumin.2021.118032_bib18 article-title: Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set[J] publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.54.11169 – volume: 73 start-page: 3238 year: 1990 ident: 10.1016/j.jlumin.2021.118032_bib5 article-title: Luminescence studies of oxygen‐related defects in Aluminum nitride[J] publication-title: J. Am. Chem. Soc. – volume: 1 start-page: e22 year: 2012 ident: 10.1016/j.jlumin.2021.118032_bib3 article-title: High-brightness polarized light-emitting diodes[J] publication-title: Light Sci. Appl. doi: 10.1038/lsa.2012.22 – volume: 248 start-page: 1513 year: 2011 ident: 10.1016/j.jlumin.2021.118032_bib7 article-title: Ultraviolet luminescence in AlN[J] publication-title: Phys. Status Solidi B doi: 10.1002/pssb.201046616 – volume: 79 start-page: 3030 year: 1997 ident: 10.1016/j.jlumin.2021.118032_bib15 article-title: Observation of native Ga vacancies in GaN by positron annihilation publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.79.3030 – volume: 86 start-page: 222108 year: 2005 ident: 10.1016/j.jlumin.2021.118032_bib6 article-title: Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys[J] publication-title: Appl. Phys. Lett. doi: 10.1063/1.1943489 – volume: 95 start-page: 3851 year: 2004 ident: 10.1016/j.jlumin.2021.118032_bib22 article-title: First-principles calculations for defects and impurities: applications to III-nitrides[J] publication-title: J. Appl. Phys. doi: 10.1063/1.1682673 – volume: 6 start-page: 15 year: 1996 ident: 10.1016/j.jlumin.2021.118032_bib19 article-title: Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set[J] publication-title: Comput. Mater. Sci. doi: 10.1016/0927-0256(96)00008-0 – volume: 31 start-page: 475401 year: 2019 ident: 10.1016/j.jlumin.2021.118032_bib37 article-title: Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys[J] publication-title: J. Phys. Condens. Matter doi: 10.1088/1361-648X/ab35a4 – volume: 105 start-page: 111104 year: 2014 ident: 10.1016/j.jlumin.2021.118032_bib9 article-title: Origins of optical absorption and emission lines in AlN[J] publication-title: Appl. Phys. Lett. doi: 10.1063/1.4895786 – volume: 118 start-page: 8207 year: 2003 ident: 10.1016/j.jlumin.2021.118032_bib21 article-title: Hybrid functionals based on a screened Coulomb potential[J] publication-title: J. Chem. Phys. doi: 10.1063/1.1564060 – volume: 111 year: 2012 ident: 10.1016/j.jlumin.2021.118032_bib30 article-title: Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams[J] publication-title: J. Appl. Phys. doi: 10.1063/1.3675270 – volume: 103 start-page: 161901 year: 2013 ident: 10.1016/j.jlumin.2021.118032_bib10 article-title: Vacancy compensation and related donor-acceptor pair recombination in bulk AlN[J] publication-title: Appl. Phys. Lett. doi: 10.1063/1.4824731 – volume: 77 start-page: 3865 year: 1996 ident: 10.1016/j.jlumin.2021.118032_bib20 article-title: Generalized gradient approximation made simple[J] publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.77.3865 – volume: 255 start-page: 1700521 year: 2018 ident: 10.1016/j.jlumin.2021.118032_bib36 article-title: Carrier trapping by vacancy‐type defects in Mg‐implanted GaN studied using monoenergetic positron beams[J] publication-title: Phys. Status Solidi B doi: 10.1002/pssb.201700521 – volume: 105 start-page: 111104 year: 2014 ident: 10.1016/j.jlumin.2021.118032_bib42 article-title: Origins of optical absorption and emission lines in AlN publication-title: Appl. Phys. Lett. doi: 10.1063/1.4895786 – volume: 102 year: 2009 ident: 10.1016/j.jlumin.2021.118032_bib23 article-title: Fully ab initio finite-size corrections for charged-defect supercell calculations[J] publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.102.016402 – start-page: 1 year: 1979 ident: 10.1016/j.jlumin.2021.118032_bib27 – volume: 9 year: 2016 ident: 10.1016/j.jlumin.2021.118032_bib4 article-title: Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire[J] publication-title: APEX |
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