Jin, J., Oudwan, M., Daineka, D., Moustapha, O., & Bonnassieux, Y. (2012). Parameter extraction method for universal amorphous silicon thin-film transistors simulation program with integrated circuit emphasis model. IET circuits, devices & systems, 6(2), 118-121. https://doi.org/10.1049/iet-cds.2011.0124
Citace podle Chicago (17th ed.)Jin, J.W, M. Oudwan, D. Daineka, O. Moustapha, a Y. Bonnassieux. "Parameter Extraction Method for Universal Amorphous Silicon Thin-film Transistors Simulation Program with Integrated Circuit Emphasis Model." IET Circuits, Devices & Systems 6, no. 2 (2012): 118-121. https://doi.org/10.1049/iet-cds.2011.0124.
Citace podle MLA (9th ed.)Jin, J.W, et al. "Parameter Extraction Method for Universal Amorphous Silicon Thin-film Transistors Simulation Program with Integrated Circuit Emphasis Model." IET Circuits, Devices & Systems, vol. 6, no. 2, 2012, pp. 118-121, https://doi.org/10.1049/iet-cds.2011.0124.